HN2C12FU Search Results
HN2C12FU Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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HN2C12FU | Unknown | dual NPN transistor | Scan | 119.17KB | 2 | |||
HN2C12FU |
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Transistor Silicon NPN Epitaxial Planar Type | Scan | 1MB | 1 | |||
HN2C12FU |
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NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | Scan | 82.66KB | 1 |
HN2C12FU Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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HN2C12FUContextual Info: TOSHIBA HN2C12FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN2C12FU Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) |
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HN2C12FU HN2C12 HN2C12FU | |
H123
Abstract: HN2C12FU
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HN2C12FU HN2C12 H123 HN2C12FU | |
Contextual Info: TOSHIBA HN2C12FU T O SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN7ri7Fll • ■ u 'm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) SYMBOL |
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HN2C12FU | |
HN2C12FU
Abstract: H123
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HN2C12FU N2C12 HN2C12FU H123 | |
Contextual Info: TOSHIBA HN2C12FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN2C12FU Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 + 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC |
OCR Scan |
HN2C12FU |