HN3C15FU Search Results
HN3C15FU Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| HN3C15FU | Unknown | NPN Transistor | Scan | 119.6KB | 2 | ||
| HN3C15FU |
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NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | Scan | 91.8KB | 1 | ||
| HN3C15FU |
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Transistor Silicon NPN Epitaxial Planar Type | Scan | 1MB | 1 | ||
| HN3C15FU(TE85L) |
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TRANS GP BJT NPN 7V 0.04A 6(2-2J1A) T/R | Scan | 1MB | 1 |
HN3C15FU Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: TOSHIBA TENTATIVE HN3C15FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO CHARACTERISTIC |
OCR Scan |
HN3C15FU | |
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Contextual Info: HN3C15FU TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C15FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm 2-1 + 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC |
OCR Scan |
HN3C15FU | |
HN3C15FUContextual Info: TOSHIBA TENTATIVE HN3C15FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C15FU Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) |
OCR Scan |
HN3C15FU HN3C15FU | |
HN3C15FUContextual Info: T O S H IB A TENTATIVE HN3C15FU T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE HN3C15FU Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads 2.1 ± 0.1 M A X IM U M RATINGS (Ta = 25°C) |
OCR Scan |
HN3C15FU HN3C15FU | |
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Contextual Info: TOSHIBA HN3C15FU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C15FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm 2-1 + 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC |
OCR Scan |
HN3C15FU | |
HN3C15FUContextual Info: TO SH IBA HN3C15FU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C15FU V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 i 0.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) |
OCR Scan |
HN3C15FU N3C15 HN3C15FU |