HN3C18FU Search Results

Contextual Info: TO SHIBA HN3C18FU TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FU V H F -U H F LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : N F = 1.4dB (f=2G H z) • High Gain : |S2 i el2 = 10dB (f=2G H z)

Contextual Info: TO SHIBA HN3C18FU TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FU V H F -U H F LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : N F = 1.4dB (f=2G H z) • High Gain : |S2 i el2 = 10dB (f=2G H z)

Contextual Info: TOSHIBA HN3C18FU TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FU V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS U nit in mm 2.1 ± 0.1 CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.4dB (f=2G Hz) • High Gain : |S2 i e |2 = 10dB (f=2G Hz)

HN3C18FU

Contextual Info: TOSHIBA HN3C18FU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FU VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS U nit in mm 2.1 ± 0.1 CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.4dB (f=2G Hz) • High Gain : |S2 i e |2 = 10dB (f=2G Hz)

Contextual Info: TOSHIBA TENTATIVE HN3C18FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FU VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.4dB (f=2GHz) • High Gain : |S2 l e|2= 10dB (f=2GHz)

HN3C18FU

Contextual Info: TO SH IBA HN3C18FU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FU Unit in mm VH F-U HF LOW NOISE AMPLIFIER APPLICATIONS 2.1 CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.4dB (f=2GHz) • High Gain : |S2i e|2= 10dB (f=2GHz)