HOT CARRIER DIODE Search Results

WBDL301

Abstract: diode marking 4t switiching diode Detector Diodes marking c
Contextual Info: WBDL301 Surface Monut Schottky Barrier Diode Silicon Hot-Carrier Diodes Silicon HOT-CARRIER DETECTOR AND SWITCHING DIODES 30 VOLTS P b Lead Pb -Free Features: * Extremely Low Minority Carrier Lifetime - 15 ps(Typ). * Very Low Capacitance. — 1.5pF(MaX)@VR = 15V

WBDL301

Abstract: Detector Diodes marking c
Contextual Info: WBDL301 Surface Monut Schottky Barrier Diode Silicon Hot-Carrier Diodes Silicon HOT-CARRIER DETECTOR AND SWITCHING DIODES 30 VOLTS P b Lead Pb -Free Features: * Extremely Low Minority Carrier Lifetime - 15 ps(Typ). * Very Low Capacitance. — 1.5pF(MaX)@VR = 15V

4T SOT 23

Abstract: switiching diode WBD301 diode marking 4t
Contextual Info: WBD301 Surface Monut Schottky Barrier Diode Silicon Hot-Carrier Diodes Silicon HOT-CARRIER DETECTOR AND SWITCHING DIODES 30 VOLTS P b Lead Pb -Free Features: 3 * Extremely Low Minority Carrier Lifetime - 15 ps(Typ). * Very Low Capacitance. — 1.5pF(MaX)@VR = 15V

ed28 smd diode

Abstract: hv 102 mos fet transistor diagram of high frequency pvc welding machine schematic diagram of electric cookers Ultrasonic Cleaner schematic engel injection machines TEG 2423 40khz ULTRASOUND CLEANER ultrasonic generator 40khz for cleaning schematic of trigger 555 n-mosfet
Contextual Info: FAILURE MECHANISMS OF SEMICONDUCTOR DEVICES III. FAILURE MECHANISMS OF SEMICONDUCTOR DEVICES 1. INTRODUCTION 2. FAILURE MECHANISMS AND SCREENING 3. FAILURE MECHANISMS ATTRIBUTED TO WAFER FABRICATION PROCESS 3.1 HOT CARRIER 3.3.1.1 INTRODUCTION 3.3.1.2 HOT CARRIER MECHANISM

MBD101

Abstract: TO-236AA oil mixer MMBD101 LIPT noise diode BDI sot23 mbd101 motorola FT343
Contextual Info: M OT O RO L A SC ÍXSTRS/R 6367254 F3- AT MOTOROLA SC DE j t.3b?aSM <XSTRS/R F G tm bO ? 89D 7 9 6 07 D MOTOROLA SEMICONDUCTOR MBD101 MMBD101 MMBD101L TECHNICAL DATA SILICON HOT-CARRIER UHF MIXER DIODE SILICON HOT-CARRIER DIODE SCHOTTKY BARRIER DIODE) %

MMBD201

Abstract: MMBD501 MBD201 MBD101 MBD501
Contextual Info: r AT 89D 77456 367255 MOTOROLA SC <DIODES/OPTO D - o '! DE | t,3t,72S5 007745b T Hot-Carrier Schottky) Diodes / / / / * % CASE 182-02 (TO-226AC) TO-92 CASE 318-02 (TO-236AA) Standard Hot-Carrier diodes are ideal for VHF and UHF mixer and detector applications as well as many higher frequency

MBD501

Contextual Info: R3S725S ~ÉH M O TO RO LA SC 89D < 0 IO D E S /O P T O T“-o*7-o'l 77456 DE I t,3ti7SSS 007745b T J~~ Hot-Carrier Schottky) Diodes CASE 318-02 (TO-236AA) Standard CASE 182-02 (TO-226AC) TO-92 Hot-Carrier diodes are ideal for VHF and UHF mixer and detector applications as well as many higher frequency

STA280

Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES 30 V O LT S SILICON HOT-CARRIER DIODES SCHOTTKY BARRIER DIODES * . . . d esigned p rim a rily fo r h ig h -e fficie n cy UHF and VHF dete cto r a p p lica tio n s. R eadily a daptable to m a ny o th e r fast sw itc h in g RF

microwave mixer diode

Abstract: MBD103 noise diode
Contextual Info: MBD103 SILICON SILICON HOT-CARRIER DIODE (SCHOTTKY BARRIER DIODE) SILICON HOT-CARRIER . . . designed p rim a rily fo r m icro w a ve m ix e r a p p lic a tio n s b u t suitable M ICROW AVE MIXER DIODE also fo r use in d e te c to r and u ltra -fa s t s w itc h in g circ u its .

WBDL301

Abstract: diode marking 4t
Contextual Info: WBDL301 Surface Monut Schottky Barrier Diode Silicon Hot-Carrier Diodes SCHOTTKY DIODES 30 VOLTS P b Lead Pb -Free Features: * Extremely Low Minority Carrier Lifetime - 15 ps(Typ). * Very Low Capacitance. — 1.5pF(MaX)@VR = 15V * Low Reverse Leakage. — IR = 13nAdc(Typ)

Contextual Info: MMBD452 Dual Hot Carrier Mixer Diodes SOT-23 Features — Very low capacitance. — Extremely low minority carrier lifetime. — Low reverse leakage. — Power dissipation Pd=225mW. Applications — Designed primarily for UHF and VHF detector Dimensions in inches and millimeters

MDL301K

Abstract: diode marking 4t diode schottky 4T DETECTOR FLAME 4T sot 23
Contextual Info: MDL301K 30V Hot-Carrier Detector Schottky Barrier Diode Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free . . . FEATURES A Schottky Barrier Diodes Packaged in SOT-23 SOT-23 L Low Reverse Leakage Very Low Capacitance Extremely Low Minority Carrier lifetime - 15 ps Type

4T SOT23

Abstract: marking 4T sot-23 4T sot 23 diode marking 4t WBD301 diode schottky 4T diode fr 210 4t MARKING
Contextual Info: WBD301 Surface Monut Schottky Barrier Diode Silicon Hot-Carrier Diodes SCHOTTKY DIODES 30 VOLTS P b Lead Pb -Free Features: 3 * Extremely Low Minority Carrier Lifetime - 15 ps(Typ). * Very Low Capacitance. — 1.5pF(MaX)@VR = 15V * Low Reverse Leakage. — IR = 13nAdc(Typ)

MBD702

Abstract: MBD502
Contextual Info: MBD502 silicon MBD702 HIG H-VOLTAG E SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES SILICON HOT-CARRIER DIODE (SCHOTTKY BARRIER DIODE) 5 0 -7 0 V O L T S . . . d esig n ed p r im a rily fo r h ig h -e ffic ie n c y U H F an d V H F d e te c to r a p p lic a tio n s.

M6H MARKING sot23

Abstract: DIODE M5G MMBD355LT1G NSVMMBD353LT1G SOT23 marking m5g Code sot-23 on semiconductor NSVMMBD353 marking M6H SOT-23 m4f e
Contextual Info: MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G http://onsemi.com Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching

Contextual Info: MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G http://onsemi.com Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching

MBD701

Abstract: Surface Mount RF Schottky Barrier Diodes
Contextual Info: ON Semiconductort MBD701 MMBD701LT1 Silicon Hot-Carrier Diodes Schottky Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other

709 SOT23

Abstract: marking 4T sot-23
Contextual Info: ON Semiconductort MBD301 MMBD301LT1 Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other

Surface Mount RF Schottky Barrier Diodes

Abstract: marking 4T sot-23
Contextual Info: ON Semiconductort MBD301 MMBD301LT1 Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other

Contextual Info: ON Semiconductort MBD701 MMBD701LT1 Silicon Hot-Carrier Diodes Schottky Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other

Schottky barrier sot-23 Marking I 5H 5

Abstract: MBD701 MMBD701LT1
Contextual Info: ON Semiconductort MBD701 MMBD701LT1 Silicon Hot-Carrier Diodes Schottky Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other

4T SOT23

Contextual Info: ON Semiconductort MBD301 MMBD301LT1 Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other

MBD701

Abstract: MMBD701L MMBD701LT1
Contextual Info: ON Semiconductort MBD701 MMBD701LT1 Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other

MBD301

Abstract: MMBD301 MMBD301L MMBD301LT1
Contextual Info: ON Semiconductort MBD301 MMBD301LT1 Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other