HR ONS Search Results

RBR71L

Contextual Info: Radial Lead Precision Wirewound Resistors RB / RBR, HR / 4000, PC Series RB / RBR, HR / 4000, PC Series 2ADIAL,EAD0RECISION •7IREwOUND2ESISTORS 0.1 to 0.6 watts · Tolerance to ±.01% · 0.1 ohm to 3 meg ohms sTOwATTS · Approved to M, P, & R levels

VDE0879-3

Abstract: mercedes hella positioning sensor zener alternator rectifier starting key benz BTS120 BTS149 BTS307 BTS550P BTS640S2
Contextual Info: 17. Meeting ‘Elektronik im Kraftfahrzeug’ Munich, June 3-4, 1997 Intelligent 42V Power Semiconductors Intelligent Power Semiconductors for Future Automotive Electrical Systems Dr. Alfons Graf, Siemens Power Semiconductors, HL LH TM 2 Hr. Dieter Vogel, Siemens Power Semiconductors, HL LH TM

Circuit diagram of Car battery jump starter

Abstract: TEMPFET BTS149 equivalent mercedes TLE5216 BTS307 hella positioning sensor starting key benz BTS120 BTS149
Contextual Info: 17. Meeting ‘Elektronik im Kraftfahrzeug’ Munich, June 3-4, 1997 Intelligent 42V Power Semiconductors Intelligent Power Semiconductors for Future Automotive Electrical Systems Dr. Alfons Graf, Siemens Power Semiconductors, HL LH TM 2 Hr. Dieter Vogel, Siemens Power Semiconductors, HL LH TM

Contextual Info: h Value High Value rfaceSurface Mount Resistor Mount Resistor Wrap-around terminations for soldering HR Series ies High Value • 100M ohms to 50G ohms Mount Resistor ·Surface Low voltage coefficient of resistance Organic Protection · Lead free only Tin/lead Solder

BLF542

Abstract: UBB776
Contextual Info: Philips Semiconductors 003010b HR M APX Product specification UHF power MOS transistor BLF542 N AMER PHILIPS/DISCRETE FEATURES b^E T> PIN CONFIGURATION • High power gain • Easy power control o • Gold metallization • Good thermal stability • Withstands full load mismatch

punching oil

Abstract: MARKING CODE H33
Contextual Info: A COMPANY OF METAL OXIDE FILM Power type H./HR./HL. VISHAY C O M P O M ^ T S U.K. Features • low inductance • low voltage coefficient • suitable for water cooling • excellent overload characteristics • suitable for dummy load applications Style

Contextual Info: RR-HR D-Sub connectors - Stamped and Formed Contacts REAR RELEASE CRIMP CONNECTORS oo l_ > t— « ►— GO I— l Specifications Designed fo r high volume production, Am phenol's rear • Connectors according to MIL C24308 release crim p connector and cn

20APR1

Contextual Info: 172316-10 NOTE: REVISIONS REV DRAWING NO. A THIRD ANGLE PROJ. 1. CONTACT PIN TO SOLDER DESCRIPTION DATE RELEASE TO MFG. 20-Apr-11 ECO APPR - HR 2. IP 67 RATED 0.787" [20.00] MM SCALE 1.250 0.319" [8.10] MM 0.020" [0.50] MM 0.094" [2.40] MM 0.094" [2.40] MM

Contextual Info: 182319-10 REVISIONS REV DRAWING NO. DESCRIPTION NC THIRD ANGLE PROJ. RELEASE TO MFG. A ECO 01-May-04 - 07-Jun-00 UPDATE DRAWING FORMAT DIMENSIONS 50.50 WAS 52.00 14.00 WAS 13.80 B DATE - 29-Mar-11 SCALE APPR G.R.S 2154 HR 1.250 1.98" [50.50]MM 5/8-24-UNEF-2A

Micro Coax 1.13mm

Contextual Info: 336212-12-XXXX NOTES: REVISIONS REV DRAWING NO. 1. PACKAGE CABLE ASSEMBLY IN BAG.TAG IN BAG WITH "AMPHENOL CONNEX, 336212-12 A THIRD ANGLE PROJ. -XXXX AND DATE CODE". DESCRIPTION DATE RELEASE TO MFG. 08-FEB-11 ECO - APPR HR 2. CABLE ASSEMBLY TO BE 100% TESTED FOR CONTINUITY, SHORTS AND OPEN.

ci237

Abstract: AAS-100 75151 ci237 ha scr Igt 1mA
Contextual Info: r Z Z SGS-THOMSON * 7 £ TLS 106 H D g » I[L I(g îM O (g i SENSITIVE GATE SCR FEATURES • LOWIg t ^ 200nA . LOWIr ^ 5mA ■ hr(RMS =4A DESCRIPTION The TLS 106 Silicon Controlled Rectifiers are high performance MESA diffused PNPN devices glass passivated sensitive gate technology.

3S111

Abstract: U201A NJU201AD E3R3 DG201A NJU201A NJU201AM NJU7301
Contextual Info: HR A N J U 2 O 1A C-M OS QUAD SPST ANALOG SW ITCH PACKAGE OUTLINE GENERAL DESCRIPTION The NJU201A is a quad break-before-make SPST analog switch protected up to 44V operating voltage. All switches are controlled by TTL or C-MOS compati­ ble input. The low on-state resistance is about half compare

Contextual Info: 47022 REVISIONS REV DRAWING NO. NOTE: DESCRIPTION A THIRD ANGLE PROJ. DATE RELEASE TO MFG. 19-Apr-11 ECO - APPR HR 1. HANDLE TO BE TRANSPARENT RED. 1"x3 3/4", 4 FLUTE SCALE 0.500 12.000" REF [304.80] MM 0.400" REF [10.16] MM 1.304" REF [33.12] MM 1. UNLESS OTHERWISE SPECIFIED, DIMENSIO NS ARE IN INCHES AND TOLERANCES ARE:

BSZ520N15NS3

Abstract: marking 6B s4si 6B104 I6025 marking a6b
Contextual Info: Je]R BSZ520N15NS3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q AD:> :J65 7@B 54 54 4@? F6BC:@? Q 492 ? ? 6=  ? @B> 2 = 6F6= V 9I )-( K R 9I"\[#$ZNd -* Z" I9 *) 6 Q  H46= = 6? D82 D6 492 B86 HR 9I"\[# AB@5E4D ) '  Q& @G @? B6C:CD2 ? 46 R 9I"\[#

55B5

Abstract: IPB036N12N marking eb5 Diode 9H diode 1D marking G9
Contextual Info: IPB036N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4     3 ? >F5BD5BC Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H *( J R 9H"[Z#$YMd +&. Y" I9 )0( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 + 9H"[Z#

marking EB diode

Abstract: Q451 ee 19 8b qg
Contextual Info: IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R  , ? >=1H, & Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &    I9 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# 0( J -&,

IPD320N20N3

Abstract: marking EB5
Contextual Info: IPD320N20N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H *( J R 9H"[Z#$YMd +* Y" I9 +, 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D EB5

IPB025

Abstract: IPB025N08N3 G
Contextual Info: IPB025N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H 0 J Q ' 3 81>>5< >? B=1<<5F5< R 9H"[Z#$YMd *&- Y" Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &  I9 *( 6 @B5F9? EC 5>79>55B9 >7 C1=@<5 3 ? 45 ?E7(*8C(0C Q. 5BI <? G ? > B5C9CD

Contextual Info: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R  , ? >=1H- Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &   I9 ( J ,&* Y" )( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z#

4b 5c marking

Abstract: PG-TO-263-7
Contextual Info: IPB030N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B=? D? B4B9F5 1@@<931D9 ? >C V 9H 0( J R 9H"[Z#$YMd +&( Y" I9 .( 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 

marking EB5

Abstract: 5CC1
Contextual Info: BSC320N20NS3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H *( J R 9H"[Z#$YMd +* Y" I9 +. 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q 2 6B55 <514 @<1D9 >7 + ? " , 3 ? =@<9

IPD600N25N3 G

Contextual Info: IPD600N25N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H *-( J R 9H"[Z#$YMd .( Y" I9 *- 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D EB5

IPB027N10N3

Abstract: marking 1D 55B5 Q451 EB5 MARKING marking G9
Contextual Info: IPB027N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H ( J R 9H"[Z#$YMd *&/ Y" I9 )*( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D

4b 5c marking

Contextual Info: BSC360N15NS3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H -( J R 9H"[Z#$YMd +. Y" I9 + 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q  T ? @5B1D9>7 D5=@5B1D EB5