HSR5 Search Results

Contextual Info: EURO QUARTZ HSR53 Sine Wave Oscillators 5 x 3.2 x 1.0mm SMD 10.0MHz to 30.0MHz FEATURES Sine Wave output in miniature SMD package Output 10k //10pF load, level 1.0V peak to peak Harmonics -25dBc maximum Very low current consumption <1.0mA at 2.8V supply OUTLINE & DIMENSIONS

Contextual Info: CRYSTAL OSCILLATORS “HSR57” series 5x7 mm MERCURY Wave Form: True Sine Wave Since 1973 PRELIMINARY Clock Oscillator with true sine wave output has never been offered in such a small package in the industry – the HSR57 5x7x1.8 mm . HSR57 features low phase noise (<130 dBc / Hz at 1 KHz), low power

HSR5100

Abstract: HSR520
Contextual Info: HI-SINCERITY Spec. No. : HL200710 Issued Date : 2007.05.01 Revised Date : 2007.05.24 Page No. : 1/2 MICROELECTRONICS CORP. HSR520 thru HSR5100 Schottky Barrier Rectifiers Reverse Voltage 20 to 100V, Forward Current 5A Features • Low Forward Voltage Drop

low frequency sine oscillator

Abstract: sine oscillator
Contextual Info: EURO QUARTZ HSR53 Sine Wave Oscillators 5 x 3.2mm SMD Sine Wave Clock Oscillator FEATURES Sine Wave output in miniature SMD package Output 10k //10pF load, level 1.0V peak to peak Harmonics -25dBc maximum Very low current consumption <1.0mA at 2.8V supply

Contextual Info: CRYSTAL OSCILLATORS “HSR53” series 5x3.2 mm MERCURY Wave Form: True Sine Wave Since 1973 Clock Oscillator with true sine wave output has never been offered in such a small package in the industry – the HSR53 5x3.2x1.2mm . HSR53 features low phase noise (<130 dBc / Hz at 1 KHz), low power (<20 m W)

low frequency sine oscillator

Abstract: sine oscillator HSR57 Quartz oscillator 300MHz
Contextual Info: EURO QUARTZ HSR57 Sine Wave Oscillators 7 x 5mm SMD Sine Wave Clock Oscillator FEATURES Sine Wave output in small SMD package Output 10k //10pF load, level 1.0V peak to peak Harmonics -25dBc maximum Very low current consumption <1.0mA at 2.8V supply OUTLINE & DIMENSIONS

Contextual Info: HSR57 Sine Wave Oscillators EURO QUARTZ 7 x 5 x 1.8mm SMD 10.0MHz to 30.0MHz FEATURES Sine Wave output in small SMD package Output 10k //10pF load, level 1.0V peak to peak Harmonics -25dBc maximum Very low current consumption <1.0mA at 2.8V supply OUTLINE & DIMENSIONS

Contextual Info: S W I T CHING T HE S M A R T WAY Reed Switches SMD Reed Switches Reed Sensors Level Sensors Magnets Sensor Technology Welcome to PIC Our work is never done. Passion, respect, integrity and discipline are the four core values which drive us to sophisticated

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,

PA66 GF 25

Abstract: datasheet HSR-502 HSR-V15K Sm2CO17 PA6 GF 30 PA6 GF 50 PA66-GF PMC-0701 PLS-080 hallsensor
Contextual Info: 2010 Sensor Technology Reedschalter SMD-Reedschalter S W I TCHING T HE SM A R T WAY Reedsensoren Levelsensoren Magnete Willkommen bei PIC Fortschritt durch Dynamik. Geleitet von unseren Werten Leidenschaft, Respekt, Integrität und Disziplin, entwickeln wir ausgereifte

datasheet HSR-502

Abstract: hsr 502 HSR-502
Contextual Info: PIC GmbH • Nibelungenstr. 5A 90530 Wendelstein, Germany Phone +49 911 99 59 06-0 Fax +49 911 99 59 06-99 info@pic-gmbh.com • www.pic-gmbh.com HSR-502 Pb Mikro-Wechslerkontakt Bleifrei Elektrische Daten Kontaktform C Kontaktmaterial Rh Schaltleistung max.

HSR-502

Abstract: datasheet HSR-502 hsr 502 hsr502
Contextual Info: PIC GmbH • Nibelungenstr. 5A 90530 Wendelstein, Germany Phone +49 911 99 59 06-0 Fax +49 911 99 59 06-99 info@pic-gmbh.com • www.pic-gmbh.com HSR-502 Pb Micro Form C Switch Lead free Electrical Characteristics Contact form C Contact material Rh Contact rating max.

HSR-V100

Abstract: HSR-638BSL HSR-834 HSR-004 HSR510 HSR-302BSL HSR-634 HSR-830 HSR-V10K RS421
Contextual Info: Hermetic Switch Reed Switches A reed switch consists of 2 or 3 metal reed contacts that are hermetically sealed inside a glass tube containing an inert, pressure or vacuum atmosphere. Depending on the original contact configuration, Normally Open NO or Normally Closed (NC), the contacts will either complete

MRF6VP3450H

Abstract: MRF6VP3450H 470-860 MRF6VP3450HR5 DVB-T Schematic MRF6Vp3450 MRF6VP3450HR6 ATC100B331 ATC800B ATC800B100J500XT ATC100B331GT500XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 4, 4/2010 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1008H Rev. 0, 12/2013 RF Power Field Effect Transistors MMRF1008HR5 HSR5 N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for applications operating at frequencies

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1009H Rev. 0, 12/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1009HR5 HSR5 RF power transistors designed for applications operating at frequencies

UT-90-25

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1305H Rev. 0, 12/2013 RF Power LDMOS Transistors MMRF1305HR5 HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1006H Rev. 0, 12/2013 RF Power Field Effect Transistors MMRF1006HR5 HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to

HSR-830RT

Abstract: HSA-12027 HSR-156WT HSR-069RT HSR-630RT HSR-190RT HSR-502R HSR-1015 HSR-910WT HSR-0025DT
Contextual Info: 1529-2012:QuarkCatalogTempNew 9/10/12 5:58 PM Page 1529 17 Reed Switches, Proximity Sensors and Accessories B C B C B A RoHS C1 C2 Fig. B Fig. A Fig. C A Highest quality reed switches feature contacts hermetically sealed in a protective atmosphere. Protected contacts mean reliable operation in wet, oily, dirty — even explosive — environments. Glass capsule size ranges from a compact 2" glass length down to

UL1371

Abstract: HSR-502R
Contextual Info: 3100 Norge Road Chickasha, OK 73018 ISO 9001 Registered Part Number PRX+3800 Contact Form B Switch Configuration SPST Rev. A Ultra-Small Form B Cylindrical Proximity Sensor Features Advantages • Hermetically sealed contacts • Extended operations in extreme environments

RS-421A

Abstract: RS421 HSR-502
Contextual Info: ISO 9001 Registered Part Number HSR-502R Contact Form C Switch Configuration SPDT Rev. G One of the Smallest Form C Switches Made in the World Features Advantages • Hermetically sealed contacts • Extended operations in extreme environments • Leaded glass currently exempted from RoHS

MRF6Vp3450

Abstract: MRF6VP3450HR5 atc800b4r7j500xt ATC800B MRF6VP3450H UUD1V220MCL1GS A114 JESD22 MRF6VP3450HR6 MRF6VP3450HSR5
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 3, 7/2009 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 HSR5 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1013H Rev. 0, 7/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for aerospace and defense S-band radar pulse applications operating at frequencies between 2700 and 3200 MHz.

G2225X7R225KT3AB

Abstract: m27500 transfer impedance
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,