HT 25-19 TRANSISTOR Search Results
HT 25-19 TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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TTC022 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini |
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TTC020 |
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NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini |
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HT 25-19 TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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marking Ax
Abstract: 2SA1739 2SC3938
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2002/95/EC) 2SA1739 2SC3938 marking Ax 2SA1739 2SC3938 | |
image processing freeContextual Info: For Communications Equipment MN86074 Image Processing LSI Overview transistor FET An external resistor determines the follow-up range. M Di ain sc te on na tin nc ue e/ d The MN86074 boosts image quality by applying various image processing techniques to the analog signal from |
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MN86074 MN86074 64-gradation, image processing free | |
Contextual Info: Transistors 2SA1806 Silicon PNP epitaxial planar type For high speed switching Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 • High speed switching • Low collector-emitter saturation voltage VCE sat • SS-Mini type package allowing downsizing of the equipment and |
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2SA1806 | |
Contextual Info: 2N3749 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV NPN Power Silicon Transistor Qualified per MIL-PRF-19500/315 DESCRIPTION This NPN silicon transistor is rated at 5 amps and is military qualified up to a JANTXV level. This TO-111 isolated package features a 180 degree lead orientation. |
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2N3749 MIL-PRF-19500/315 O-111 H28/1 FED-STD-H28/1) T4-LDS-0328, 190-32UNF-2A | |
AN44060A
Abstract: an44060
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AN44060A HSOP042-P-0400D SFA00002AEB AN44060A an44060 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1806G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high speed switching • Package • High speed switching • Low collector-emitter saturation voltage VCE(sat) |
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2002/95/EC) 2SA1806G | |
Transistor PA 8403Contextual Info: ICs for CD/CD-ROM Player AN8812SC, AN8812SCR 4ch. Linear Driver IC for CD/CD-ROM AN8812SC Unit : mm 6.0 (4.6) 1 28 16.0±0.3 1.0 15 1.45±0.16 (0.2) 3.15±0.2 0.1±0.1 (0.5) 8.4±0.3 1.45±0.16 11.73±0.3 Fin-attached 28-lead SOP package (HSOP028-P-0450) |
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AN8812SC, AN8812SCR AN8812SC AN8812SCR AN8812SC Transistor PA 8403 | |
mitsumi 455khzContextual Info: ICs for FM/AM Tuner AN7002K, AN7002S Single Chip ICs for AM Radio Unit : mm 22 21 20 19 18 17 16 15 14 13 12 M Di ain sc te on na tin nc ue e/ d 19.1±0.3 1 2 3 4 5 6 7 8 9 10 11 0.5±0.1 0.9±0.25 AN7002K The AN7002K and the AN7002S are the single chip ICs |
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AN7002K, AN7002S AN7002K AN7002S AN7002K mitsumi 455khz | |
PHT11N06LTContextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low |
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PHT11N06LT OT223 OT223. PHT11N06LT | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1739 Silicon PNP epitaxial planar type For high speed switching Complementary to 2SC3938 (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 |
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2002/95/EC) 2SA1739 2SC3938 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1738 Silicon PNP epitaxial planar type For high speed switching Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ d p lan inc |
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2002/95/EC) 2SA1738 2SC3757) | |
2SA1806J
Abstract: SC-89
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2002/95/EC) 2SA1806J 2SA1806J SC-89 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1806J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 Unit: mm 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 For high speed switching • Features |
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2002/95/EC) 2SA1806J | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2082 Silicon PNP epitaxial planar type For high speed switching Unit: mm • Features 3 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO –10 V Collector-emitter voltage (Base open) |
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2002/95/EC) 2SA2082 | |
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Contextual Info: Voltage Regulators AN30210A Power supply control IC for a digital still camera • Overview Unit: mm 9.00±0.20 7.00±0.20 48 33 32 0.50 49 1 16 0.40 0.16+0.10 –0.05 ■ Applications 0.15 0° to10° 0.50±0.25 LQFP064-P-0707 Note) The package of this product will be changed |
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AN30210A AN30210A | |
transistor ic equivalent bookContextual Info: AN3861SA Sensor-less Motor Drive IC for VTR Movie Cylinder • Overview Unit : mm The AN3861SA is a sensor-less motor drive IC for VTR movie cylinder. It uses both sensor-less and sine wave drive, thus excellent for low-noise applications. 11.0±0.3 6.1±0.3 |
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AN3861SA AN3861SA transistor ic equivalent book | |
Contextual Info: For Video Equipment MN3113F Vertical Driver LSI for Video Camera CCD Area Image Sensor Pin Assignment Applications 34 35 36 37 38 39 40 41 42 43 44 22 21 20 19 18 17 16 15 14 13 12 VH VDD VCC2 IV2 IV4 SENSE1 VOUT+ VIN+ CAP3 CAP2 CAP1 1 2 3 4 5 6 7 8 9 10 11 |
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MN3113F MN3113F | |
Contextual Info: ICs for Audio Common Use AN12940AA Audio signal processing IC for notebook PC • Overview M Di ain sc te on na tin nc ue e/ d The AN12940AA is an amplifier IC for stereo speakers which can output 1 W by 8 Ω or 2 W by 4 Ω. The AGC circuit is built-in to prevent the resonance or the vibration by the speaker's energy and the clipping distortion what |
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AN12940AA AN12940AA | |
Contextual Info: Others DN8667NS 8-Bit Shift Register Latch Constant Current Driver IC • Overview 0.4 Unit : mm 20 19 14 8 13 9 12 10 11 2.05±0.2 15 7 0.1 0.2 +– 0.05 0.9±0.25 16 6 1.27 17 5 5.5±0.3 7.6±0.3 (0.4) 0.9±0.25 ea s ht e v tp is :// it pa fo na llo so win |
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DN8667NS DN8667NS | |
F587
Abstract: TI 740
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62702-F30 F587 TI 740 | |
UV916
Abstract: UV916m PHILIPS tuner schematic TDA receiver QAM schematic diagram 16 QAM Transmitter block diagram HP3764A AN96048 HP8657A Signal mixing NE602 TDA 4600
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8046H TDA8046H UV916 UV916m PHILIPS tuner schematic TDA receiver QAM schematic diagram 16 QAM Transmitter block diagram HP3764A AN96048 HP8657A Signal mixing NE602 TDA 4600 | |
Contextual Info: High Speed Transistor Couplers Single/Dual Channel 8 Pin DIP Part M ih* m •m /im *. rM R im <52. 9 ImA 6N135 6N136 ICPL4502 Single channel Transistor Output 7 High C.M.R. 1 kv/tis. min 19 ICPL2533 Dual Channel Transistor Output «» F tm ■HT» f W M ilM M t a iilii . |
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6N135 6N136 ICPL4502 ICPL2530 ICPL2531 ICPL2533 6N137 ICPL2601 ICPL2611 ICPL2630 | |
Contextual Info: Voltage Regulators AN1149NFHK 6-ch DC-DC Converter • Overview Unit: mm 9.0±0.2 7.0±0.1 36 25 24 37 0.75 7.0±0.1 9.0±0.2 M Di ain sc te on na tin nc ue e/ d 4 channels of step-up, 1 channel of step-down and 1 channel of step-up/down voltage, 6 channels in total have |
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AN1149NFHK | |
Contextual Info: 3 Stanford Microdevices Product Description SSW-308 Stanford M icrodevices’ SSW -308 is a high perfom ance Gallium Arsenide Field Effect Transistor M MIC switch housed in a low-cost surface-m ountable small outline plastic package. DC-3 GHz Low Cost G a As MMIC SPDT Switch |
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SSW-308 28dBm. -45Cto 500MHz |