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HUASHAN Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Shantou Huashan Electronic Devices Co.,Ltd. PNP SILICON TRANSISTOR HBD682 █ APPLICATIONS Medium Power Linear switching. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-126F Tstg ——Storage Temperature………………………… -65~150℃ T j ——Junction Temperature……………………………… 150℃ |
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HBD682 O-126F -100V -100mA -100V, -30mA -50mA, | |
npn transistor 100v min
Abstract: NPN Transistor 10A 100V HBDW93C IB 100MA NPN npn DARLINGTON 15A transistor npn ic10A DARLINGTON 3A 100V npn
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HBDW93C O-220 100mA, 100mA npn transistor 100v min NPN Transistor 10A 100V HBDW93C IB 100MA NPN npn DARLINGTON 15A transistor npn ic10A DARLINGTON 3A 100V npn | |
HSBD438Contextual Info: Shantou Huashan Electronic Devices Co.,Ltd. PN P S I L I C O N T R A N S I S T O R HSBD438 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg ——Storage Temperature………………………… -55~150℃ |
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HSBD438 -10mA -500mA -100mA -250mA, HSBD438 | |
H8050
Abstract: H8050 equivalent
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H8050 E00mA 800mA 800mA, 800mA 100AIE 100AIC H8050 H8050 equivalent | |
H3904
Abstract: H3906
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H3904 H3906) 625mW 100AIE 10mAIB 10AIC 100MHz H3904 H3906 | |
POWER MOSFET Rise Time 1 ns
Abstract: mosfet gate source voltage 20v
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HFF640 O-220F Width300sDuty 200VVGS POWER MOSFET Rise Time 1 ns mosfet gate source voltage 20v | |
H78L12
Abstract: ViN-19V 16VVIN27V low current fixed regulator three terminal
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H78L12 H78L12 100mA 100mA 1mAIO40mA 16VVIN27V, 16VVIN27V 1mAIO100mA 5VVIN27V 14VVIN27V ViN-19V 16VVIN27V low current fixed regulator three terminal | |
H11-44Contextual Info: PN P S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1144 █ APPLICATIONS Medium frequency power amplifier,Medium Seed switching. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-126ML Tstg——Storage Temperature………………………… -55~150℃ |
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H1144 O-126ML -120V -100V -100V, -100mA -500mA, -50mA H11-44 | |
hb123dContextual Info: NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HB123D █ APPLICATIONS Power Amplifie █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ |
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HB123D O-126ML 300mA 500mA 100mA, hb123d | |
7905
Abstract: ci 7905 transistor 7905 7905 datasheet MA 7905 of transistor 7905 7905 voltage regulator 7905 a 7905 TO-220 H7905
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H7905 O-220 O-220 -20VIO -12VIO PO15W, 100kHz 120Hz 7905 ci 7905 transistor 7905 7905 datasheet MA 7905 of transistor 7905 7905 voltage regulator 7905 a 7905 TO-220 | |
Contextual Info: N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HM13002 █ HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-126ML |
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HM13002 O-126ML 500mA 100mA | |
POWER MOSFET Rise Time 1 ns
Abstract: c25 mosfet "N-Channel MOSFET" HFP45N06 MOSFET 20V 45A MOSFET Rise Time 1 ns MOSFET C25 mosfet gate source voltage 20v mosfet low vgs 1502d
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HFP45N06 O-220 Width300sDuty 60VVGS POWER MOSFET Rise Time 1 ns c25 mosfet "N-Channel MOSFET" HFP45N06 MOSFET 20V 45A MOSFET Rise Time 1 ns MOSFET C25 mosfet gate source voltage 20v mosfet low vgs 1502d | |
H1008Contextual Info: NPN S I L I C O N T R A N S I S T O Shantou Huashan Electronic Devices Co.,Ltd. H1008 █ █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ |
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H1008 800mW 700mA 500mA, 10AIC H1008 | |
Contextual Info: PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HX789A █ APPLICATIONS Motor drivers. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ |
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HX789A | |
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Contextual Info: Shantou Huashan Electronic Devices Co.,Ltd. PNP S I L I C O N T R A N S I S T O R HSBD138 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg ——Storage Temperature………………………… -55~150℃ |
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HSBD138 -150mA -500mA, -50mA -30mA | |
H557Contextual Info: PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. H557 █ APPLICATIONS SWITCHING AND AMPLIFIER █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ |
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500mW -100mA -100AIC -10mA, -100mA, -10mA -10mA H557 | |
Contextual Info: N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2717 █ APPLICATIONS TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) T stg ——Storage Temperature………………………… -55~150℃ |
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H2717 300mW 100AIC 30MHz 45MHz | |
Contextual Info: NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2682 █ APPLICATIONS . Audio Power Amplifie. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ |
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H2682 O-126ML 10AIC | |
electronic devicesContextual Info: N PN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HE13007 █ HIGH VOLTAGE SWITCH MODE APPLICATION █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-220AB |
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HE13007 O-220AB electronic devices | |
H2907A
Abstract: h2907
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H2907A 625mW -610V, -500mA -150mA, -15mA -500mA, -50mA H2907A h2907 | |
HBS170Contextual Info: Shantou Huashan Electronic Devices Co.,Ltd. HBS170 N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-92 These products have been designed to minimize on-state resistance While provide rugged, reliable, and fast switching performance. They |
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HBS170 500mA 100uA 200mA HBS170 | |
Contextual Info: NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD377 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) T stg ——Storage Temperature………………………… -55~150℃ |
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HSBD377 150mA 100mA, | |
H3906
Abstract: H3904
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H3906 H3904) 625mW -100AIE -10mAIB -10AIC -10mA -10mA, -10mA H3906 H3904 | |
HFP840
Abstract: diode 400V 4A IRF840 irf840 equivalent 8A500V transistor 400v 8a to220
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HFP840 O-220 IRF840 width300S HFP840 diode 400V 4A IRF840 irf840 equivalent 8A500V transistor 400v 8a to220 |