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    HUF75344P Search Results

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    HUF75344P Price and Stock

    onsemi HUF75344P3

    MOSFET N-CH 55V 75A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF75344P3 Tube 332 1
    • 1 $3.22
    • 10 $3.22
    • 100 $3.22
    • 1000 $1.34238
    • 10000 $1.34238
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    Avnet Americas HUF75344P3 Tube 17 Weeks 800
    • 1 -
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    • 100 -
    • 1000 $1.4406
    • 10000 $1.26341
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    Mouser Electronics HUF75344P3 1,070
    • 1 $3.22
    • 10 $2.87
    • 100 $1.61
    • 1000 $1.54
    • 10000 $1.54
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    Newark HUF75344P3 Bulk 800
    • 1 -
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    • 1000 $1.43
    • 10000 $1.43
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    Onlinecomponents.com HUF75344P3
    • 1 -
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    • 1000 $1.47
    • 10000 $1.47
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    Rochester Electronics HUF75344P3 683 1
    • 1 $1.49
    • 10 $1.49
    • 100 $1.4
    • 1000 $1.27
    • 10000 $1.27
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    TME HUF75344P3 10 1
    • 1 $2.66
    • 10 $2.66
    • 100 $1.94
    • 1000 $1.9
    • 10000 $1.9
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    Avnet Asia HUF75344P3 17 Weeks 800
    • 1 -
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    • 1000 $1.41303
    • 10000 $1.3258
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    Avnet Silica HUF75344P3 18 Weeks 50
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    EBV Elektronik HUF75344P3 19 Weeks 50
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    Rochester Electronics LLC HUF75344P3

    MOSFET N-CH 55V 75A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF75344P3 Tube 194
    • 1 -
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    • 1000 $1.55
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    Rochester Electronics LLC HUF75344P3_NL

    N-CHANNEL POWER MOSFET
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    DigiKey HUF75344P3_NL Bulk 312
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    • 1000 $1.19
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    Harris Semiconductor HUF75344P3

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    Bristol Electronics HUF75344P3 476
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    Rochester Electronics HUF75344P3 4,923 1
    • 1 $1.49
    • 10 $1.49
    • 100 $1.4
    • 1000 $1.27
    • 10000 $1.27
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    Fairchild Semiconductor Corporation HUF75344P3

    POWER FIELD-EFFECT TRANSISTOR, 75A I(D), 55V, 0.008OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HUF75344P3 1,784
    • 1 $4
    • 10 $4
    • 100 $4
    • 1000 $1.5
    • 10000 $1.5
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    Find more HUF75344P price and stock on Findchips.com

    HUF75344P Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF75344P3 Fairchild Semiconductor 75A,55V,0.008 ?R N-Channel UltraFET Power MOSFETs Original PDF
    HUF75344P3 Fairchild Semiconductor 75 A, 55 V, 0.008 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75344P3 Intersil 75A, 55V, 0.008 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75344P3 Intersil 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs Scan PDF
    HUF75344P3_NL Fairchild Semiconductor 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75344PS Toshiba Power MOSFETs Cross Reference Guide Original PDF

    HUF75344P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    75344g

    Abstract: 75344P HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet January 2000 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75344G3, HUF75344P3, HUF75344S3S 75344g 75344P HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334

    75344G

    Abstract: 75344p HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet December 2001 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75344G3, HUF75344P3, HUF75344S3S 75344G 75344p HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet December 2004 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75344G3, HUF75344P3, HUF75344S3S

    Untitled

    Abstract: No abstract text available
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Semiconductor Data Sheet March 1999 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75344G3, HUF75344P3, HUF75344S3S 32e-3 52e-2 41e-1 13e-1 83e-2 HUF75344 15e-3

    75344G

    Abstract: No abstract text available
    Text: HUF75344G3, HUF75344P3 Data Sheet N-Channel UltraFET Power MOSFET 55 V, 75 A, 8 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding


    Original     		PDF HUF75344G3, HUF75344P3 HUF75344P3 75344G

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    75344G

    Abstract: 75344p HUF75344P3 HUF75344G3 HUF75344S3S HUF75344S3ST TB334
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet January 2000 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75344G3, HUF75344P3, HUF75344S3S 75344G 75344p HUF75344P3 HUF75344G3 HUF75344S3S HUF75344S3ST TB334

    75344G

    Abstract: HUF75344G3 75344P HUF75344P3 HUF75344S3S HUF75344S3ST TB334
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet December 2004 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75344G3, HUF75344P3, HUF75344S3S 75344G HUF75344G3 75344P HUF75344P3 HUF75344S3S HUF75344S3ST TB334

    fairchild to-220ab 75344P

    Abstract: 75344G 75344P 75344P FAIRCHILD HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet December 2001 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75344G3, HUF75344P3, HUF75344S3S fairchild to-220ab 75344P 75344G 75344P 75344P FAIRCHILD HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    Complementary MOSFETs buz11

    Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 Complementary MOSFETs buz11 irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    HRF3205 equivalent

    Abstract: HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A
    Text: Date Created: 3/29/2004 Date Issued: 4/6/2004 PCN # 20041001-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0041001-A 0030402-A. RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 RFP45N06 HRF3205 equivalent HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    BUT11APX equivalent

    Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
    Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


    Original     		PDF BT148-600R BT148-400R BUT11APX equivalent BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    75344G

    Abstract: 75344P 75344 RELAY TC1 TA75344 HUF75344 HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST
    Text: interrii HUF75344G3, HUF75344P3, HUF75344S3S January 2000 Data Sheet 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs -9 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75344G3, HUF75344P3, HUF75344S3S 75344G 75344P 75344 RELAY TC1 TA75344 HUF75344 HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST

    Untitled

    Abstract: No abstract text available
    Text: HUF75344G3, HUF75344P3, HUF75344S3, HUF75344S3S Semiconductor Data Sheet 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75344G3, HUF75344P3, HUF75344S3, HUF75344S3S O-263AB O-263AB

    75344G

    Abstract: 75344P HUF75344G3 75344s TA75344
    Text: interrii HUF75344G3, HUF75344P3, HUF75344S3S Data S heet Ja n u a ry 2000 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75344G3, HUF75344P3, HUF75344S3S AN7254 AN7260. 75344G 75344P HUF75344G3 75344s TA75344