HVM13 Search Results

Hitachi DSA001653

Contextual Info: HVM131S Silicon Epitaxial Planar Pin Diode for Antenna Switching ADE-208-379A Z Rev. 1 Oct. 1995 Features • Low capacitance.(C = 0.8pFmax) • Low forward resistance. (rf = 1.0Ωmax) • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HVM132WK Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI ADE-208-319B Z Rev. 2 Jan. 1996 Features • Low capacitance.(C = 0.5pFmax) • Low forward resistance. (rf = 2.0£2max) • M PAK package is suitable for high density surface mounting and high speed assembly.

Hitachi DSA00306

Abstract: HVM132 SC-59A 1r7e
Contextual Info: ADE-208-318 Z HVM132 Silicon Epitaxial Planar Pin Diode for Antenna Switching Rev. 0 Jan. 1995 Features Outline • Low capacitance.(C=0.5pF max) • Low forward resistance. (rf=2.0Ω max) • MPAK package is suitable for high density surface mounting and high speed assembly.

IR1 DIODE

Contextual Info: RF-Diodes PIN-Diodes Variable Capacitance Diodes HVB14S HVC131 HVC132 HVC133 HVM121WK HVM131S HVM131SR HVM132 HVM132WK HVM14 HVM14S HVM14SR HVM187S HVM187WK HVU131 HVU132 HVU133 HVU187 HVC200A HVC202A HVC300A HVC306A HVC308A HVC317B HVC350B HVC351 HVC355B

Contextual Info: HVM132-Silicon Epitaxial Planar PIN Diode for Antenna Switching Features Outline • Low capacitance. C=0.5pF max • Low forward resistance. (rp2.0i2 max) • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HVM132WK Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI ADE-208-319B Z Rev. 2 Jan. 1996 Features • Low capacitance.(C = 0.5pFmax) • Low forward resistance. (rf = 2.0i2max) • MPAK package is suitable for high density surface mounting and high speed assembly.

transistor mark code H1

Abstract: transistor mark code H7 Variable Capacitance Diode HVR100 mark CA MARK CODE N1 rf transistor mark code H1 HVB14S HVC131 HVC132
Contextual Info: RF-Diodes PIN-Diodes Variable Capacitance Diodes HVB14S HVC200A HVC202A HVC202B HVC300A HVC306A HVC308A HVC317B HVC350B HVC351 HVC355B HVC357 HVC358B HVC359 HVC362 HVC363A HVC365 HVC369B HVC372B HVC374B HVC131 HVC132 HVC133 HVC134 HVM121WK HVM131S HVM131SR

Contextual Info: ADE-208-318 Z HVM132 Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI Rev. 0 Jan. 1995 Outline Features • Low capacitance.(C=0.5pF max) • Low forward resistance. (rf=2.0Q max) • M PA K p a ck a g e is su ita b le for h igh d en sity

Contextual Info: HVM131S-Silicon Epitaxial Planar PIN Diode for Antenna Switching Features Outline • Low capacitance. C=0.8pF max • Low forward resistance. (rpl.OQ max) • MPAK package is suitable for high density surface mounting and high speed assembly.

HVM131SR

Abstract: SC-59A Hitachi DSA00304
Contextual Info: ADE-208-380A Z HVM131SR Silicon Epitaxial Planar Pin Diode for Antenna Switching Rev. 1 Oct. 1995 Features Outline • Low capacitance.(C=0.8pF max) • Low forward resistance. (rf=1.0Ω max) • MPAK package is suitable for high density surface mounting and high speed assembly.

HVM132WK

Abstract: SC-59A Hitachi DSA00304
Contextual Info: ADE-208-319B Z HVM132WK Silicon Epitaxial Planar Pin Diode for Antenna Switching Rev. 2 Jan. 1996 Features Outline • Low capacitance.(C=0.5pF max) • Low forward resistance. (rf=2.0Ω max) • MPAK package is suitable for high density surface mounting and high speed assembly.

03p4

Abstract: Hitachi DSA001653
Contextual Info: HVM132WK Silicon Epitaxial Planar Pin Diode for Antenna Switching ADE-208-319B Z Rev. 2 Jan. 1996 Features • Low capacitance.(C = 0.5pFmax) • Low forward resistance. (rf = 2.0Ωmax) • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HVM131SR-Silicon Epitaxial Planar PIN Diode for Antenna Switching Features Outline • Low capacitance. C=0.8pF max • Low forward resistance. (rpl.O il max) • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: H ITACHI ADE-208-319B Z HVM132WK Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI Features Rev. 2 Jan. 1996 Outline n3 Low capacitance.(C=0.5pF max) • Low forward resistance. (rp 2 .0 £ i max) • M P A K package is suitable fo r high density

Contextual Info: HVM131SR Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI ADE-208-380A Z Rev. 1 Oct. 1995 Features • Low capacitance.(C = 0.8pFmax) • Low forward resistance. (rf = l.Oilmax) • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: A D E - 2 0 8 - 3 1 9 Z HVM132WK Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI Rev. 0 J a n . 1994 Features Outline n3 • Low capacitance. (C=0.5pF max) • Low forward resistance. (rp2.0Q max) • MPAK package is suitable for high density

HVM131S

Abstract: SC-59A Hitachi DSA00304
Contextual Info: ADE-208-379A Z HVM131S Silicon Epitaxial Planar Pin Diode for Antenna Switching Rev. 1 Oct. 1995 Features Outline • Low capacitance.(C=0.8pF max) • Low forward resistance. (rf=1.0Ω max) • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: I HITACHI ADE-208-38QA Z HVM131SR Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI Features Rev. 1 Oct. 1995 Outline • Low capacitance.(C=0.8pF max) • Low forward resistance, (r p l .0 0 max) • MPAK pack age is su ita b le for h igh d en sity

Contextual Info: HVM132 Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI ADE-208-318 Z Rev. 0 Jan. 1995 Features • Low capacitance.(C = 0.5pFmax) • Low forward resistance. (rf = 2.0i2max) • MPAK package is suitable for high density surface mounting and high speed assembly.

Hitachi DSA001653

Contextual Info: HVM131SR Silicon Epitaxial Planar Pin Diode for Antenna Switching ADE-208-380A Z Rev. 1 Oct. 1995 Features • Low capacitance.(C = 0.8pFmax) • Low forward resistance. (rf = 1.0Ωmax) • MPAK package is suitable for high density surface mounting and high speed assembly.

Hitachi DSA001653

Contextual Info: HVM132 Silicon Epitaxial Planar Pin Diode for Antenna Switching ADE-208-318 Z Rev. 0 Jan. 1995 Features • Low capacitance.(C = 0.5pFmax) • Low forward resistance. (rf = 2.0Ωmax) • MPAK package is suitable for high density surface mounting and high speed assembly.

qo-10

Contextual Info: HITACHI ADE-208-318 2 HVM132 Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI Features Rev. 0 Jan. 1995 Outline • Low capacitance.(C=0.5pF max) • Low forward resistance. (rp2.0Q max) • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HITACHI ADE-208-379A Z HVM131S Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI Features Rev. 1 Oct. 1995 Outline • Low capacitance.(C=0.8pF max) • Low forward resistance, ( r p l ,0i2 max) • M PAK p ack ag e is su ita b le fo r high density

Contextual Info: HVM131S Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI ADE-208-379A Z Rev. 1 Oct. 1995 Features • Low capacitance.(C = 0.8pFmax) • Low forward resistance. (rf = l.Oilmax) • MPAK package is suitable for high density surface mounting and high speed assembly.