HVU355 Search Results

HVU355

Abstract: Hitachi DSA00493
Contextual Info: ADE-208-022A Z HVU355 Variable Capacitance Diode for VCO Preliminary Rev. 1 May. 1993 Features Outline • Low series resistance. (rs=0.6Ω max) • Ultra small Resin Package (URP) is suitable for surface mount design. Cathode mark Mark 1 2 Ordering Information

Contextual Info: ADE-208-022A Z HVU355 Variable Capacitance Diode for VCO HITACHI Preliminary Rev. 1 May. 1993 Outline Features • Low series resistance. (rs=0.6£2 max) • U ltra small Resin package (U R P ) is suitable for surface mount design. Cathode mark Mark i* . - i - - , i

Contextual Info: HVU355 Variable Capacitance Diode for VCO HITACHI Features • Low series resistance. rs = 0.6i2max • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code HVU355 U URP Outline ADE-208-022B (Z)

HVU355B

Abstract: DSA003642
Contextual Info: HVU355B Variable Capacitance Diode for VCO ADE-208-498 Z Rev. 0 Feb. 1997 Features • High capacitance ratio. (n =2.20 min) • Low series resistance. (rs=0.6Ωmax). • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information

Contextual Info: HVU355B Variable Capacitance Diode for VCO REJ03G0081-0100Z Previous: ADE-208-498 Rev.1.00 Sep.17.2003 Features • High capacitance ratio. (n = 2.20 min) • Low series resistance. (rs = 0.60 Ω max) • Ultra small Resin Package (URP) is suitable for surface mount design.

PF0145

Abstract: GSM signal processing block z650 hitachi saw GSM TCXO 900 MHz
Contextual Info: GSM RF System Evaluation Board G SM is a digital cellular telep h one application system using the H D 155101F • Variable capacitance diode: HVU355 system im ple­ and Hitachi GSM sem iconductors. The m ented in Europe, and currently System EvB is designed to verify the

Hitachi DSA001652

Abstract: HVU355
Contextual Info: HVU355 Variable Capacitance Diode for VCO ADE-208-022B Z Rev. 2 Features • Low series resistance. (rs = 0.6Ωmax) • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code HVU355 U

Hitachi DSA002714

Contextual Info: HVU355B Variable Capacitance Diode for VCO ADE-208-498 Z Rev 0 Features • High capacitance ratio. (n = 2.20 min) • Low series resistance. (rs = 0.6Ωmax). • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information

Hitachi DSAUTAZ005

Abstract: HVU355
Contextual Info: HVU355 Spice parameter * Model generated on Sep 24, 96 * MODEL FORMAT: HITACHI SPICE * HITACHI DIODE Model . MODEL HVU355 ZDV D +EG=1.1100E+00 +CJO=9.2000E-12 +TT=5.1390E-06 +CJO2=6.2242E-12 +COFF=3.0000E-13 +IS=7.7080E-16 +PB=7.6000E-01 +BV=1.5000E+01 +M2=5.1450E-01

S 437 Diode

Contextual Info: HVU355-Variable Capacitance Diode for VCO Features Outline • Low series resistance. rs=0.6i2 max • Ultra small Resin Package (URP) is suitable for surface mount design. Cathode mark Mark 1 Ordering Information — • :Xvÿ-: - I 1 j : : 2

Contextual Info: HVU355B Variable Capacitance Diode for VCO HITACHI ADE-208-498 Z Rev 0 Features • High capacitance ratio, (n = 2.20 min) • Low series resistance. (rs = 0.6i2max). • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information

HVU355B

Contextual Info: HVU355B Variable Capacitance Diode for VCO ADE-208-498 Z Rev 0 Feb. 1997 Features • High capacitance ratio. (n =2.20 min) • Low series resistance. (rs=0.6Ωmax). • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information

Contextual Info: ADE-208-022A Z HVU355 Variable Capacitance Diode for VCO Preliminary Rev. 1 May. 1993 Features Outline • Low series resistance. (rs=0.6i2 max) • Ultra small R esin £ackage (URP) is suitable for surface mount design. Ordering Information Type No. Laser Mark

HVU355B

Contextual Info: HVU355B Variable Capacitance Diode for VCO REJ03G0081-0100Z Previous: ADE-208-498 Rev.1.00 Sep.17.2003 Features • High capacitance ratio. (n = 2.20 min) • Low series resistance. (rs = 0.60 Ω max) • Ultra small Resin Package (URP) is suitable for surface mount design.

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

EIAJ-ED-4701

Abstract: EIAJED-4701 1SS106 EIAJ-ED-4131 RKP450KE EIAJ standards zener diode reliability fit 1s2076 smd diode ED 1SS270
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

553200

Abstract: neosid 4.7K NEOSID 33k E1 NEOSID 33k neosid 1K NEOSID B69813-N1477-A840 SIP 9 JP1 neosid* 10k 70 MHz SAW FILTER SMA
Contextual Info: STA001 RF FRONT-END FOR DIGITAL RADIO PRODUCT PREVIEW • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SINGLE CHIP RECEIVER FOR SATELLITE DIGITAL TRANSMISSION SUPERHETERODYNE RECEIVER WITH IF OUTPUT HIGH INPUT INTERCEPT POINT, LOW MIXER NOISE 54dB IF VGA GAIN RANGE

BPF420

Abstract: 017 C202 Hitachi DSA00280 transistor c905 hx 630 transistor c903 Varicap
Contextual Info: HD155111F RF Single-chip Linear IC for PCN Cellular Systems ADE-207-257 Z 1st Edition August 1998 Description The HD155111F was developed for PCN (DCS1800) cellular systems, and integrates most of the functions of a transceiver. The HD155111F incorporates the bias circuit for a RF LNA, a 1st mixer, 1st-IF amplifier,

IR1 DIODE

Contextual Info: RF-Diodes PIN-Diodes Variable Capacitance Diodes HVB14S HVC131 HVC132 HVC133 HVM121WK HVM131S HVM131SR HVM132 HVM132WK HVM14 HVM14S HVM14SR HVM187S HVM187WK HVU131 HVU132 HVU133 HVU187 HVC200A HVC202A HVC300A HVC306A HVC308A HVC317B HVC350B HVC351 HVC355B

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

varicap diodes

Abstract: BIPOLAR TRANSISTOR dual gate mosfet in vhf amplifier hitachi SAW Filter gsm module with microcontroller p channel mosfet Transistors mosfet p channel Mosfet transistor hitachi Low frequency power transistor vhf fet lna
Contextual Info: AMPS Cellular Phone RF Power Amplifier M odules For PA PF0032 Power Module for AMPS Mobile PF0040 Power Module for AMPS Mobile PF0042 Power Module for EAMPS Mobile PF0045A Power Module for AMPS Handheld PF0065 Power Module for AMPS Handheld PF0065A Power Module for AMPS Handheld

BPF420

Abstract: MQE502-902 MQE601-902 transistor SG 6822 mqe502 LMX2336 uhf linear amplifier module frequency generator IC 8038 MQE601 IC 8038 function generator
Contextual Info: HD155101BF RF Single-chip Linear IC for GSM and EGSM Systems ADE-207-256A Z 2nd Edition September 1998 Description The HD155101BF was developed for GSM and EGSM cellular systems, and integrates most of the functions of a transceiver. The HD155101BF incorporates the bias circuit for a RF LNA, a 1st mixer, 1stIF amplifier, 2nd mixer, AGC amplifier and an IQ quadrature demodulator for the receiver, and an IQ

transistor mark code H1

Abstract: transistor mark code H7 Variable Capacitance Diode HVR100 mark CA MARK CODE N1 rf transistor mark code H1 HVB14S HVC131 HVC132
Contextual Info: RF-Diodes PIN-Diodes Variable Capacitance Diodes HVB14S HVC200A HVC202A HVC202B HVC300A HVC306A HVC308A HVC317B HVC350B HVC351 HVC355B HVC357 HVC358B HVC359 HVC362 HVC363A HVC365 HVC369B HVC372B HVC374B HVC131 HVC132 HVC133 HVC134 HVM121WK HVM131S HVM131SR