HWC27NC Search Results

HWC27NC Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
HWC27NC		Hexawave	3.5 W C-band power FET non-via hole chip		Original	PDF	65.79KB	2

HWC27NC Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: HWC27NC 123456789ABC7DEF7 952 47 9B71 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 11 dB Typical Gain at 4 GHz • 5V to 10V Operation 650 Source Description 435 1 215 2 3 The HWC27NC is a medium power GaAs FET	Original	HWC27NC 123456789ABC7DEF7 HWC27NC	PDF
IN 5406 Abstract: F24G 1S121 M 16100 39 2 1019 Contextual Info: Jft, HSXAWAVS Hexawave, Inc. C-Band Non-Via Hole Chip Description The following parts are presently offered in chip form. They are fabricated by Hexawave 0.7^m gate length, nchannel MESFET process, non -via hole device, designed for various C-Band applications.	OCR Scan	HWC27NC HWC30NC HWC34NC chip67 IN 5406 F24G 1S121 M 16100 39 2 1019	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: HWC27NC 123456789ABC7DEF7 952 47 9B71 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 11 dB Typical Gain at 4 GHz • 5V to 10V Operation 650 Source Description 435 1 215 2 3 The HWC27NC is a medium power GaAs FET

Original

HWC27NC 123456789ABC7DEF7 HWC27NC

PDF

IN 5406

Abstract: F24G 1S121 M 16100 39 2 1019
Contextual Info: Jft, HSXAWAVS Hexawave, Inc. C-Band Non-Via Hole Chip Description The following parts are presently offered in chip form. They are fabricated by Hexawave 0.7^m gate length, nchannel MESFET process, non -via hole device, designed for various C-Band applications.

OCR Scan

HWC27NC HWC30NC HWC34NC chip67 IN 5406 F24G 1S121 M 16100 39 2 1019

PDF