HY531000A Search Results

Contextual Info: •HYUNDAI HYM536220 W-Series 2M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160 in 42/42 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin giass-epoxy printed circuit board. 0.22nF decoupling

Contextual Info: ♦HYUNDAI SEMICONDUCTOR HYM591000C Series 1M x 9-bit CMOS ORAM MODULE DESCRIPTION The HYM591000C is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^ mF decoupling capacitor is mounted for each DRAM.

HYM5361

Abstract: HYM536100AMG hym536100
Contextual Info: " H Y U N D A I SEMICONDUCTOR H Y M 5 3 6 1 0 0 A S e r ie s 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100Ais a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board, 0.22 iFdecoupling

Contextual Info: “H YU N D A I HYM536120A W-Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536120A is a 1M x 36-bit Fast page m ode CMOS DRAM m odule consisting of two HY5118160B in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling

HYM536220

Abstract: HY5118160 HYM536220W70
Contextual Info: •HYUNDAI HYM536220 W-Series 2M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CM OS DRAM module consisting of four HY5118160 in 42/42 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling

Contextual Info: HYUNDAI H Y 5 3 10 0 0 A SEMICONDUCTOR 1M X S e rie s 1-bit CMOS DRAM DESCRIPTION The HY531000A is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: “H Y U N D A I H Y 5 3 1 A S e r i e s 1M X 1-bit CMOS DRAM DESCRIPTION The HY531000A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: HYUNDAI SEMICONDUCTOR HYM581000C Series 1M X 8 -b it CMOS DRAM MODULE DESCRIPTION The HYM581000C is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.

HYM536100A

Contextual Info: H Y U ND A I HYM536100A Series SEMICONDUCTOR 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22p.F decoupling

Contextual Info: HYM536100A M-Series •HYUNDAI 1M X 36-bH CMOS DRAM MODULE DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling

HYM536200AM

Abstract: HYM536200A HYM536200AM/ALM WE005 HYM536200Aibm pc 700M/ALM
Contextual Info: •HYUNDAI SEMICONDUCTOR HYM536200A Series 2M X 36-blt CM O S DRAM MODULE PRELIMINARY DESCRIPTION The HYM536200A is a 2M x 36-bit Fast page mode C M O S DRAM module consisting of sixteen HY514400A in 20/26 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board, 0.2^uF decoupling

hy5118160b

Contextual Info: «HYUNDAI HYM536220A W-Series 2M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536220A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ and eight HY531000Ain 20/26pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling

Yundai

Contextual Info: • HY531000A 1Mx1, Fast Page mode DESCRIPTION T h is fa m ily is a 1M b it d y n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 1-bit c o n fig u ra tio n w ith F a st P age m ode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design

Contextual Info: •HYUNDAI SEMICONDUCTOR HYM581000C Series 1M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000C is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor Is mounted for each DRAM.

HYM536200AM60

Abstract: 00S11
Contextual Info: • H Y U N D A I H Y M 5 3 6 2 A M - S e r î e s 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536200A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400A in 20/26 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling

HYM536100AM

Abstract: HYM536100AMG C 55GB HYM536100AM60 8ca3 hym536100am hyundai
Contextual Info: » H Y U N D A I H Y M 5 3 6 1 0 0 A 1M _ X M - S e r ie s 36-bit CMOS DRAM MODULE DESCRIPTION HyM5361 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a72 pin glass-epoxy printed circuit board. 0.22uFdecouDlina

Contextual Info: HYUNDAI HYM591000C Series SEMICONDUCTOR 1M x 9-blt CMOS DRAM MODULE DESCRIPTION The HYM591000C Is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.

HYM591000B

Contextual Info: •HYUNDAI HYM591000B Series SEMICONDUCTOR 1M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591000B is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of two HY514400A and one HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22|xF decoupling capacitor is

HY5118160

Contextual Info: 'HYUNDAI HYM536220 W-Series 2M X 36-b¡l CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160 in 42/42 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling

HY514260

Abstract: HY5117404A 164-04A 4m 300mil
Contextual Info: I' PRODUCT AVAILABILITY DRAM PRODUCT 1Mbit 2M bit 4Mbit DESCRIPTION PACKAGE OPTION ACCESS TIME ns - As of '96.3Q OPERATI!« CURRENT (mA,MAX) STA»IDBY CURI*ENT (rtiA, MAX) TTL CMOS AVAILABILITY 1M x 1 F a s t Pa ge HY531000A SOJ 60/7 0/80 85/7 5/65 2 1

r4kf

Abstract: HY53C464LS fr4k HY53C256LS HY531000J
Contextual Info: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S

Contextual Info: H Y531000A H Y U N D A I SEMICONDUCTOR S e r ie s 1M x 1-bit CMOS DRAM DESCRIPTION The HY531000A is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

AUO-PL321.60

Abstract: HY51V18164B HY514264 HY514260
Contextual Info: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP

HY531000ALJ60

Abstract: HY531000ALJ HY531000ALJ-60 HY531000AJ pin diagram of ic 7493 hbsc
Contextual Info: H Y 5 3 1 0 0 0 A ‘ • H Y U N D A I S e r ie s 1M x 1-bit CMOS DRAM DESCRIPTION The HY531000A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating