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    Untitled

    Abstract: No abstract text available
    Text: 16Mx64 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M636T6 Series DESCRIPTION The HYM72V16M636T6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy


    Original     		PDF 16Mx64 PC133 16Mx16 HYM72V16M636T6 16Mx64bits 16Mx16bits 400mil 54pin 168pin

    HYM72V16M636LT6

    Abstract: RA12
    Text: 16Mx64 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M636T6 Series DESCRIPTION The Hyundai HYM72V16M636T6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin


    Original     		PDF 16Mx64 PC133 16Mx16 HYM72V16M636T6 16Mx64bits 16Mx16bits 400mil 54pin 168pin HYM72V16M636LT6 RA12

    OC02

    Abstract: intel dg 41 rq ram circuit
    Text: HYM72V16M636T6 16Mx64, 16Mx16 based, PC133 DESCRIPTION The HY M 72V 16M 636T6 S e rie s a re 1 6 M x 6 4 b its S ynchronous D R A M M od u le s . T h e m odules a re com posed o f four 1 6M x1 6b its C M O S S ynchronous D R A M s ¡n 4 0 0 m il 54p in T S O P -II p a ck a g e, o n e 2K bit E E P R O M in Spin T S S O P p a c k a g e on a 1 68pin g las s -e p o xy


    OCR Scan     		PDF HYM72V16M636T6 16Mx64, 16Mx16 PC133 636T6 68pin OC02 intel dg 41 rq ram circuit