HYNIX SEMICONDUCTOR AMERICA Search Results

7MC-8128Z

Abstract: CFU455D2 audio squelch circuit toko 10k coil TOKO 7MC-8128Z TOKO quad coil 7MC8128Z 10.245MHz crystal TOKO 10.7MHz quadrature coil audio squelch can
Contextual Info: V 1.01 GL3361 Hynix Semiconductor Low Power Narrow Band FM IF Pin Configurations Description The GL3361 is designed for use in FM dual conversion communications equipment. This device contains an Oscillator, Mixer, Limiting Amplifier, Filter Amplifier and

4 MBIT SERIAL FLASH MEMORY HYNIX

Abstract: Hynix Semiconductor America
Contextual Info: HY29DS322/HY29DS323 32 Megabit 4M x 8/2M x16 Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 1.8 to 2.2 V (2.0V ± 10%) − Ideal for battery-powered applications

HY29LV400

Abstract: Hynix Semiconductor America
Contextual Info: HY29LV400 4 Mbit 512K x 8/256K x 16 Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 55, 70 and 90 ns access time versions for

Hynix Semiconductor America

Contextual Info: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current

29F080

Contextual Info: HY29F080 8 Megabit 1M x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 70 ns n Low Power Consumption – 15 mA typical active read current

HY29F002T

Abstract: HY29F002
Contextual Info: HY29F002T 2 Megabit 256K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current

29f400 psop

Abstract: programming 29F400 0x7C00
Contextual Info: HY29F400 4 Megabit 512Kx8/256Kx16 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current in byte

HY29F800T

Abstract: PSOP 44 Pattern HY29F800B
Contextual Info: HY29F800 8 Megabit 1Mx8/512Kx16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current in byte

HY29F800ATT

Abstract: hynix 1.8 memory flash 0x78000
Contextual Info: HY29F800A 8 Megabit 1Mx8/512Kx16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 50 ns n Low Power Consumption – 20 mA typical active read current in byte

Contextual Info: HY29F400A 4 Megabit 512Kx8/256Kx16 5 Volt-only Flash Memory KEY FEATURES 5 Volt Read, Program, and Erase – Minimizes system-level power requirements High Performance – Access times as fast as 50 ns Low Power Consumption – 20 mA typical active read current in byte

0x7E000

Abstract: HYNIX 512 Mbit HY29LV800 0X7D000
Contextual Info: HY29LV800 8 Mbit 1M x 8/512K x 16 Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70 and 90 ns access time versions for full

2746h

Abstract: k 6257 k 150MIL 300MIL HMS77C2000 HMS77C2001
Contextual Info: 8-BIT SINGLE-CHIP MICROCONTROLLERS HMS77C2000 HMS77C2001 User’s Manual Ver. 1.1 HMS77C2000/2001 Revision History Ver 1.1 (this manual, NOV. 2002) Add IOL-VOL, IOH-VOH and VPP rising & falling time graphs in the electrical characteristics. Correct mistakes in the paragraph.

Contextual Info: HY29LV400 4 Mbit 512K x 8/256K x 16 Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70 and 90 ns access time versions for full

0x1FA000

Abstract: 0x60000 00002A2C
Contextual Info: HY29LV160 16 Mbit 2M x 8/1M x 16 Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time

4 MBIT SERIAL FLASH MEMORY HYNIX

Contextual Info: HY29DS162/HY29DS163 16 Megabit 2M x 8/1M x 16 Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 1.8 to 2.2 V (2.0V ± 10%) − Ideal for battery-powered applications

hynix 227e

Contextual Info: HY29LV320 32 Mbit 2M x 16 Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time

29DL162T

Abstract: 4 MBIT SERIAL FLASH MEMORY HYNIX HY29DL162 HY29DL163 HY29DL162TT HY29DL163B 0xE8000 29dl163 0x98000 0xa8000
Contextual Info: HY29DL162/HY29DL163 16 Megabit 2M x 8/1M x16 Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 2.7 to 3.6 V − Ideal for battery-powered applications

32 Megabit 3.0-Volt only Page Mode Flash Memory

Contextual Info: HY29DL162/HY29DL163 16 Megabit 2M x 8/1M x16 Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 2.7 to 3.6 V − Ideal for battery-powered applications

Contextual Info: HY29LV320 32 Mbit 2M x 16 Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 80, 90 and 120 ns access time versions

voice record to SD card

Abstract: usb ccd controller ic Epson matrix ccd MX8861 specifications tv pattern generator panasonic cmos image sensor matrix CCD epson diagram sony lcd tv tv pattern generator ic schematic diagram tv sharp
Contextual Info: BRIEF MX8861 4M PIXEL MULTIMEDIA CAMERA CONTROLLER General Description The MX8861 is a highly integrated system LSI designed for a digital still camera from CIF up to 4 mega-pixels resolution. Based on a built-in powerful 32-bit RISC processor and many flexible and programmable functional

LCD Iphone 3G

Abstract: cd player amplifier double ic 4440 hynix lpddr2 Amphenol Connectors CATALOG iphone camera module Hynix Semiconductor lpddr2 samsung lpddr2 samsung* lpddr2 Rockchip lcd touchscreen iphone 3g
Contextual Info: Industry News: Breaking News in the Industry and around the World MEMORY Interfaces WIRELESS COMMUNICATIONS: Ultra-wideband CONSUMER ELECTRONICS: HANDHELD GAMING DEVICES PORTABLE POWER: PARTITIONING for POWER Featured Product: Texas Instruments TMS320DM355

Trends And Opportunities In Semiconductor Licensing

Abstract: FinFET
Contextual Info: Semiconductor Licensing Trends Trends And Opportunities In Semiconductor Licensing By Stefan Tamme, Stephen Schott, Dogan Gunes, Jeffrey Wallace, Richard Boadway, Frank Razavi, and Marc Pépin Summary The following article examines the impact of current business, technology, and international trends

SAMSUNG 4gb NAND Flash Qualification Report

Abstract: ddr3 MTBF SAMSUNG 256Mb NAND Flash Qualification Reliability part number decoder toshiba NAND Flash MLC DDR3 pcb layout raw card f so-dimm nand flash socket lga 60 DDR3 sodimm pcb layout samsung microsd card 2gb micron DDR3 pcb layout Hynix 32Gb Nand flash
Contextual Info: INDUSTRIAL MEMORY SOLUTIONS NAND FLASH PRODUCTS & DRAM MODULES Why choose Swissbit Swissbit is the largest independent DRAM module and Flash storage manufacturer in Europe. This enables Swissbit to be a global leader in technology supplying High Quality Memory solutions to the several key market areas

88E8001

Abstract: Motherboard dell optiplex gx280 88E8055 Marvell 88E8055 M5229 WD1600JS-00NCB1 marvell 88e8001 nc6000 Motherboard dell optiplex gx620 ibm thinkpad t42
Contextual Info: Intel Entry Storage System SS4000-E Tested Hardware and Operating System List Revision 1.5 October, 2006 Storage Server Group Marketing Revision History Intel® Entry Storage System SS4000-E Revision History Date Revision Number 21 Feb 2006 0.5 Modifications