HYUNDAI 235 Search Results
HYUNDAI 235 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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CMA31
Abstract: Linear Image sensor IC for CIS HV7131X Color CIS line sensor H1A424M167
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H1A424M167 HV7121X) CMA31 Linear Image sensor IC for CIS HV7131X Color CIS line sensor H1A424M167 | |
hyundai
Abstract: CMA31 hyundai 235 flicker automatic exposure gain multiple 176X144 320X240 640X480 H1A424M167 HV7131B high frequency linear cmos IMAGE SENSOR
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H1A424M167 HV7121X) hyundai CMA31 hyundai 235 flicker automatic exposure gain multiple 176X144 320X240 640X480 H1A424M167 HV7131B high frequency linear cmos IMAGE SENSOR | |
dn729
Abstract: P2254 P22154 P22264 P22328 P2252
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DS1210S DS1210 DN738347AAA P21776 P22233 P22310 P22312 P22230 P22309 P22311 dn729 P2254 P22154 P22264 P22328 P2252 | |
OSD 9616
Abstract: SERVICE MANUAL tv hyundai data transistor horisontal tv GMS800 GMS81C4040 GMS87C4060 icar capacitor bpl color tv circuit diagram
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GMS87C4060 GMS81C4040 OSD 9616 SERVICE MANUAL tv hyundai data transistor horisontal tv GMS800 GMS81C4040 GMS87C4060 icar capacitor bpl color tv circuit diagram | |
SERVICE MANUAL tv hyundai
Abstract: OSD 9616 1207H
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GMS87C4060 GMS81C4040 SERVICE MANUAL tv hyundai OSD 9616 1207H | |
SERVICE MANUAL tv hyundai
Abstract: television service manual hyundai data transistor horisontal tv YSS 928 icar capacitor OSD 9616 tv hyundai GMS81C4040 Hyundai HD 170 intel 27010 eprom
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GMS87C4060 GMS81C4040 SERVICE MANUAL tv hyundai television service manual hyundai data transistor horisontal tv YSS 928 icar capacitor OSD 9616 tv hyundai GMS81C4040 Hyundai HD 170 intel 27010 eprom | |
GMS87C1202
Abstract: GMS800 GMS87C1102 GMS87C1102E GMS87C1202E
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GMS87C1102 GMS87C1202 GMS87C1202 GMS800 GMS87C1102E GMS87C1202E | |
GMS87C1202
Abstract: RC01 c3h01
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GMS87C1102 GMS87C1202 GMS87C1202 RC01 c3h01 | |
arm piccolo
Abstract: GMS30C7201 SERVICE MANUAL tv hyundai GMS30C USB 2.0 SD card reader 1999 scr tic 106 The ARM7TDMI Debug Architecture piccolo ATC 1084 carrier detect phase shift key hyundai L19 2
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GMS30C7201 GMS30C7201 arm piccolo SERVICE MANUAL tv hyundai GMS30C USB 2.0 SD card reader 1999 scr tic 106 The ARM7TDMI Debug Architecture piccolo ATC 1084 carrier detect phase shift key hyundai L19 2 | |
HY514260
Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
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OCR Scan |
HY531000A. HY534256A. 256Kx4-bit, HY512260. 128KX16-bit, HY514260 HY5118160 HY5116160 HY5117404 HY51V65400 HY511616 | |
hyundai eon wiring diagram
Abstract: SV1 3100 B 14 BITS HM11S110 3570 1201 hyundai 290 electronic circuit diagram aon 2850
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HM11S110 M11S110 HM11S110 hyundai eon wiring diagram SV1 3100 B 14 BITS 3570 1201 hyundai 290 electronic circuit diagram aon 2850 | |
Contextual Info: HY51V4260B Series HYUNDAI 256Kx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve |
OCR Scan |
HY51V4260B 256Kx 16-bit 400mil 40pin 40/44pin 0D04273 | |
DS2107AContextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2107A Jul-97 9706 A6 HYUNDAI DL643858AAB 1.2µ NITRIDE 16 SOIC STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase |
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DS2107A Jul-97 DL643858AAB P-20056 P-20077 P-20078, P-20107 P-20108 DS2107A | |
Contextual Info: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32. |
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HY57V653220B 32Bit HY57V653220B 864-bit 288x32. 11/Dec 400mil | |
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Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2107A Jan-97 9639 A6 HYUNDAI DL611233ACA1 1.2µ NITRIDE 16 SOIC STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase |
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Jan-97 P-18944 P-18964 P-18965, P-19008 P-19009 P-19010 C/100% P-19011 DL611233ACA1 | |
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2107A Jan-97 9639 A6 HYUNDAI DL611233ACA1 1.2µ NITRIDE 16 SOIC STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase |
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Jan-97 P-18944 P-18964 P-18965, P-19008 P-19009 P-19010 C/100% P-19011 DL611233ACA1 | |
DS2107A
Abstract: DL643857AAA1
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DS2107A Apr-97 DL643857AAA1 P-19648 P-19689 P-19690, P-19742 P-19743 DS2107A DL643857AAA1 | |
74 HTC 192
Abstract: DS2165Q
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DS1000M-100 DS1000 DH833179ADA HOUR99 DS87C520 DN825394AAB J-STD-020 30C/60% 74 HTC 192 DS2165Q | |
Contextual Info: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM Preliminary DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32. |
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HY57V653220B 32Bit HY57V653220B 864-bit 288x32. 400mil 86pin | |
DS87520
Abstract: P2305 P23855
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DS1000M-100 DS1000 DH833179ADA P23057 P23178 DN825394AAB P23415 P23306 P23307 J-STD-020 DS87520 P2305 P23855 | |
DS87520
Abstract: dm8304 P2271 DS2165Q
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DS1232L DL817678ABB P22755 P22778 J-STD-020 DS87520 DN825394AAB DS87C520 P23306 dm8304 P2271 DS2165Q | |
19768Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1210 Apr-97 9710 C1 HYUNDAI DL650775AAE 3.0µ OX/NI 16 SOIC STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase |
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Apr-97 P-19646 P-19693 P-19694, P-19765 P-19766 P-19767 C/100% P-19768 DL650775AAE 19768 | |
DS1210Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1210 Apr-97 9710 C1 HYUNDAI DL650775AAE 3.0µ OX/NI 16 SOIC STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase |
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DS1210 Apr-97 DL650775AAE P-19646 P-19693 P-19694, P-19765 P-19766 DS1210 | |
Contextual Info: HY57V653220C 4 Banks x 512K x 32Bit Synchronous DRAM Target Spec. DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32. |
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HY57V653220C 32Bit HY57V653220B 864-bit 288x32. 400mil 86pin |