HYUNDAI AA Search Results

97C54

Abstract: siemens gms90c52
Contextual Info: HYUNDAI MICRO ELECTRONICS 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS90C3X GMS90C5X GMS97C5X User’s Manual Ver. 3.1a
 MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 3.1a Published by MCU Application Team 1999 HYUNDAI MicroElectronics All right reserved.

LG TCON

Abstract: 2a8h t-con lg
Contextual Info: 32K Flash Embedded 8-Bit MCU GMS99C58 DATA SHEET April. 2000 Ver 1.02 +<81'$, MicroElectronics Semiconductor Group of Hyundai Electronics Industries Co., Ltd. GMS99C58 HYUNDAI CONTENTS - 1.Overview . 1

Contextual Info: HYUNDAI MICRO ELECTRONICS MULTI-FORMAT DIGIATL AUDIO DECODERS HMS30C1100/1200 DataSheet Ver. 1.0 +<81'$, MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Revision History Ver. 1.0 (this manual) Nov. 25, 2000 Version 1.0 Published by

97C54

Abstract: 97C52 97c51 hyundai GMS97X56 gms90c52 interfacing 8051 with 32k byte eprom and 4k byte
Contextual Info: DEC. 1998 Ver. 3.1 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS90 Series DATA SHEET +<81'$, MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 3.1 Published by MCU Application Team 1999 HYUNDAI MicroElectronics All right reserved.

CMA31

Abstract: Linear Image sensor IC for CIS HV7131X Color CIS line sensor H1A424M167
Contextual Info: H1A424M167 Image Signal Processor for Hyundai CMOS Image Sensor Data Sheet Version 1.01 Author Doowon Choi IT Application Team System IC SBU Electronics Industries Co., Ltd Hyundai Electronics Industries Co., Ltd. H1A424M167 REVISION HISTORY Revision Issue Date

hyundai

Abstract: CMA31 hyundai 235 flicker automatic exposure gain multiple 176X144 320X240 640X480 H1A424M167 HV7131B high frequency linear cmos IMAGE SENSOR
Contextual Info: H1A424M167 Image Signal Processor for Hyundai CMOS Image Sensor Data Sheet Version 1.0 Electronics Industries Co., Ltd Hyundai Electronics Industries Co., Ltd. H1A424M167 REVISION HISTORY Revision Issue Date Comments 0.45 April 28, 1999 Draft 0.9 June 15, 1999

90C52

Abstract: hyundai 80c32 pl50 datasheet GMS90C320 80c32 24Mhz plcc44 200ua1
Contextual Info: OCT. 1999 Ver. 1.1 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS90C320 User’s Manual +<81'$, MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 1.1 Published by MCU Application Team 1999 HYUNDAI Micro Electronics Co., Ltd. All right reserved.

HY53C256

Abstract: HY53C256LS
Contextual Info: HYUNDAI HY53C256 Series 256Kx1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.

dn729

Abstract: P2254 P22154 P22264 P22328 P2252
Contextual Info: RELIABILITY MONITOR DS1210S JAN '98 MONITOR-HYUNDAI DEVICE REVISION DATE CODE LOT NUMBER PACKAGE ASSEMBLY SITE DS1210 C1 9750 DN738347AAA 16 PIN SOIC HYUNDAI-KOREA HEI PROCESS Single Poly, Single Metal 3.0 µm POCL3 reFlow (3um only); FLASH E2PROM (all other tech. numbers)

Contextual Info: M HY51C1000 HYUNDAI • ■ SEMICONDUCTOR îvixi-Bit t\io s dram M131202B-APR91 DESCRIPTION FEATURES The HY51C1000 is a high speed, low power 1,048,576X1 bit CMOS dynamic random ac­ cess memory. Fabricated with the HYUNDAI CM OS process, the HY51C1000 offers a fast

Ck37

Abstract: CSFR 40
Contextual Info: • HYUNDAI HY51V4100B Series 4M X 1bit CMOS DRAM DESCRIPTION The HY51V4100B is the new generation and fast dynamic RAM organized 4,194,304x1-bit. The HY51V4100B utilizes Hyundai’s C M OS silicon gate process technology as well as advanced circuit techniques to provide wide

256KX

Contextual Info: HY234100 Z l ” , Hyundai SEMICONDUCTOR 512k„r !* K! M621201A-MAY92 DESCRIPTION FEATURES The HY234100 is mask-programmable ROM organized as 524,288 words by 8 bits or 262,144 words by 16 bits. It is fabricated using HYUNDAI’S CMOS process technology. The

HY53C256LS

Abstract: HY53C256S-70 HY53C256 HY53C256LF HY53C256LS70
Contextual Info: HYUNDAI HY53C256 Series 256KX 1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.

MAY94

Abstract: vve.3 HY53C256 A08H
Contextual Info: HY53C256 Series HYUNDAI 256K x1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.

IC TX-2-c

Abstract: Y51480 5LCAC
Contextual Info: HY514800B Series HYUNDAI 512KX 8-blt CMOS DRAM PRELIMINARY DESCRIPTION The HY5148006 is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY514800B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating

HY53C464LS

Abstract: HY53C464
Contextual Info: HYUNDAI HY53C464 Series SEMICONDUCTOR 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.

Contextual Info: PRELIMINARY HY514400 HYUNDAI SEMICONDUCTOR 1 MX 4-Bit CMOS DRAM M1A1200A-MAY91 DESCRIPTION FEATURES The H Y 514400 is the new generation dyna­ mic RAM organized 1,048,576 words by 4 bits. The HY514400 utilizes HYUNDAI’S CMOS process technology as well as advanced circuit

SERVICE MANUAL tv hyundai

Abstract: OSD 9616 1207H
Contextual Info: 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS87C4060 GMS81C4040 User’s Manual
 MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 1.00 Published by MCU Application Team bjlim@hmec.co.kr conner@hmec.co.kr
2000 HYUNDAI Micro Electronics All right reserved.

SERVICE MANUAL tv hyundai

Abstract: television service manual hyundai data transistor horisontal tv YSS 928 icar capacitor OSD 9616 tv hyundai GMS81C4040 Hyundai HD 170 intel 27010 eprom
Contextual Info: 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS87C4060 GMS81C4040 User’s Manual
 MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 1.00 Published by MCU Application Team bjlim@hmec.co.kr conner@hmec.co.kr
2000 HYUNDAI Micro Electronics All right reserved.

HY5116400

Abstract: I3101A Hyundai Semiconductor dram
Contextual Info: HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

hy6264

Contextual Info: HY6264A-I Series •{HYUNDAI 8 K x 8-bit CMOS SRAM DESCRIPTION The HY6264A-I is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: HY5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide

HY51C4256

Abstract: block diagram of vu meter HY51C4254-10
Contextual Info: M• ■ HY51C4256 R Hyundai SEMICONDUCTOR A M151201B—APR91 DESCRIPTION FEATURES The HY51C4256 is a high speed, low power 262,144 X 4 CM OS dynamic random access memory. Fabricated with HYUNDAI CMOS technology, HY51C4256 offers a fast page m ode for high data bandw idth, fast usable