HZ12 Search Results

HP 2200

Abstract: 0472 HP 1100 12KV HZ12 HZ16 HZ18 HZ20 HZ22 2283
Contextual Info: High Voltage Ceramic Capacitors HZ Type - Strontium-based Dielectric Capacitance Range Style D + 1.0 .039 max 25.4 (1.00) 4 (.157) max D max Size Code T max HZ9 HZ12 Ø 0.8 (.003) HZ16 12.7 (0.50) ± 2 (.079) HZ18 HZ20 HZ22 HZ26 Capacitance pF ±20% Voltage

HZ1206E152R-10-B

Contextual Info: PHYSICAL DIMENSIONS: A 3 .2 0 B 1 .6 0 C [ [ 126] 063] 1.10 [ 0 4 3 ] D 0.51 [ 020] + 0 .2 0 + 0 .2 0 + + [.0 0 8 ] HZ1206E152R-10 UNCONTROLLED DOCUMENT ELECTRICAL CHARACTERISTICS: [.0 0 8 ] Z @ 50M H z 0 .2 0 [ . 0 0 8 ] DCR Q 0 .2 5 [ .0 1 0 ] N o m in a l

Contextual Info: HZ12LHB1 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage12.6 @I(Z) (A) (Test Condition)500u Tolerance (%)2 P(D) Max. (W)400m Z(z) Max. (ê) Dyn. Imped.80 Temp Coef pp/10k Maximum Operating Temp (øC)175õ

A1619A

Contextual Info: PHYSICAL DIMENSIONS: A 3 .2 0 [.1 2 6 ] - 0 .2 0 [.0 0 8 ] B 1.60 [ . 0 6 3 ] - 0 .2 0 [.0 0 8 ] C - 0 .2 0 [.0 0 8 ] 1.10 [ . 0 4 3 ] D 0.51 [.0 2 0 ] UNCONTROLLED DOCUMENT HZ1206D102R-10 ELECTRICAL CHARACTERISTICS: Z @ 100M Hz DCR Q + 0 .2 5 [.0 1 0 ]

HZ1206E601R-10

Abstract: HZ1206E601R
Contextual Info: HZ1206E601R-10 PHYSICAL DIMENSIONS: A 3 .2 0 [.1 2 6 ] B 1 .60 [ . 0 6 3 ] C 1.10 [ . 0 4 3 ] D 0.51 [.0 2 0 ] + + + + UNCONTROLLED DOCUMENT 0 .2 0 [ . 0 0 8 ] ELECTRICAL CHARACTERISTICS: 0 .2 0 [ . 0 0 8 ] Z @ 100M Hz 0 .2 0 [ . 0 0 8 ] DCR Q 0 .2 5 [.0 1 0 ]

Contextual Info: H S AD C85 Sipex D ata Converter Line 12-Bit, 10µS H ybrid AD C FEA TURES • –55ºC to +125ºC Operation • M IL-STD-883 Processing • 10 µS Conversion Time • Low Power, 1.32W max • Replacement for A DC85/84 and • A DC-HX12B/HZ12B DESCRIPTION

Contextual Info: HZ12LHC1 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage13.4 @I(Z) (A) (Test Condition)500u Tolerance (%)2 P(D) Max. (W)400m Z(z) Max. (ê) Dyn. Imped.80 Temp Coef pp/10k Maximum Operating Temp (øC)175õ

Contextual Info: A D C -H X , A D C -H Z S e rie s □M n 12-Bit, Analog-toDigital Converters FEATURES • • • • • 12-Bit resolution 8-0 r 20-Microseconds conversions 5 Input ranges Internal high Z buffer Short-cycle operation GENERAL DESCRIPTION The ADC-HX12B and ADC-HZ12B are self-contained, high

STEWARD

Contextual Info: UNCONTROLLED DOCUMENT HZ1206E152R-10 Pb Ω Ω 1800 0amp 1600 100ma 1400 Ω 200ma 1200 300ma 1000 400ma Compliant 500ma 800 600 400 200 1 10 100 1000 1800 1600 Ω 1400 1200 1000 Z 800 600 XL 400 200 R 1 10 100 1000 10000 Steward Z R X L

Contextual Info: Part Curves Page 1 of 2 HZ1206D102R-00 Electrical Characteristics NET Z DCR @ 100 MHz Max 1000 0.400 Rated Current mA 400 Physical Dimensions A B C D A B C D mm mm mm mm in in in in 3.20 1.60 1.10 0.51 0.126 0.063 0.043 0.020 http://www.steward.com/web_part_no.asp?line=EMC / EMI Board Level and Cable Core . 2/19/2004

hz1206c202r

Contextual Info: Part Curves Page 1 of 2 HZ1206C202R-00 Electrical Characteristics NET Z DCR @ 100 MHz Max 2000 0.50 Rated Current mA 300 Physical Dimensions A B C D A B C D mm mm mm mm in in in in 3.20 1.60 1.10 0.51 0.126 0.063 0.043 0.020 http://www.steward.com/web_part_no.asp?line=EMC / EMI Board Level and Cable Core . 2/19/2004

HZ1206C202R-10

Abstract: HZ1206C202R HZ1206C202R-10-B
Contextual Info: PHYSICAL DIMENSIONS: A 3 .2 0 [.1 2 6 ] B 1 .6 0 [ . 0 6 3 ] C 1.10 [ . 0 4 3 ] D 0.51 [.0 2 0 ] + 0 .2 0 .0 0 8 ] [• + 0 .2 0 .0 0 8 ] HZ1206C202R-10 ELECTRICAL CHARACTERISTICS: [• + + UNCONTROLLED DOCUMENT Z @ 30M H z 0 .2 0 [•.0 0 8 ] DCR O 0 .2 5 [•.0 1 0 ]

Contextual Info: □M n ADC-HX, ADC-HZ Series 12-Bit, Analog-toDigital Converters FEATURES • • • • • 12-Bit resolution 8-or 20-Microseconds conversions 5 Input ranges Internal high Z buffer Short-cycle operation GENERAL DESCRIPTION The ADC-HX12B and ADC-HZ12B are self-contained, high

Contextual Info: HZ12HB1 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage12.6 @I(Z) (A) (Test Condition)5.0m Tolerance (%)2 P(D) Max. (W)500m Z(z) Max. (ê) Dyn. Imped.35 Temp Coef pp/10k6.5 Maximum Operating Temp (øC)175õ

Contextual Info: HZ120 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage120 @I(Z) (A) (Test Condition)8.0m Tolerance (%)10 P(D) Max. (W)5.0 Z(z) Max. (ê) Dyn. Imped.84 Temp Coef pp/10k8.5 Maximum Operating Temp (øC)165# Package StyleFlange-B

Contextual Info: HZ12LHB3 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage13.1 @I(Z) (A) (Test Condition)500u Tolerance (%)2 P(D) Max. (W)400m Z(z) Max. (ê) Dyn. Imped.80 Temp Coef pp/10k Maximum Operating Temp (øC)175õ

Contextual Info: EMI Ferrite Chip Beads Steward’s surface mount ferrite chips provide compact, cost effective EMI filtering for densely packed PCB designs. The small footprint enables placement very close to troublesome high frequency devices. Our proprietary SMT construction yields

HZ1206E601R-00

Abstract: HZ0603B102R-00 hz0805e601r-00 HZ0603 HZ0402A601R-00 HZ0603C601R hz0603c601r-00 HZ0805C202R-00 HZ0402 HZ0805D102R-00
Contextual Info: Steward’s surface mount ferrite chips provide compact, cost effective EMI filtering for densely packed PCB designs. The small footprint enables placement very close to troublesome high frequency devices. Our proprietary SMT construction yields rugged components with

MBL8031AH

Abstract: MBL8031 8031ah intel 8031 instruction set MBL8051 P 8051ah TAIS SOT MCS-80 MCS-85 The Expanded MCS-48 System
Contextual Info: F U J IT S U A d van ced Products • M B L8051A H , M B L8031A H NMOS Single-Chip 8-Bit Microcomputer D escrip tio n The Fujitsu MBL8051 AH/8031 AH are sing le -ch ip 8 -bit m icro­ com pu ters developed as mem bers of the MBL8051 Series. These m icrocom puters have pow erful architecture and Instruction set

Contextual Info: Lambda’s new X10 Series of Power Modules are ideally suited for Telecommunications and Network applications. X10 Series Power Modules PRODUCT SPECIFICATIONS Lambda Electronics Inc. 3055 Del Sol Blvd. San Diego CA 92154 Tel: 619 575-4400 or Toll Free: (800) 275-5224

XFATM2-USBxu-2

Contextual Info: Schematic: Isolation Voltage: 1500Vrms INPUT to OUTPUT , 500Vrms(TD to RD) UTP SIDE OCL: 3 5 D u H Min ID O K H z 1 0D m V B m A D C Rise Time (1 0 — 90%); 2.5ns Typical Insertion — 1.1 d B M a xim u m Insertion Loss (100M Hz-125M Hz): -1 .5 d B Maximum

zener diode B3 39

Abstract: HZ11 HZ12 HZ15 HZ16 HZ18 HZ20 HZ22 HZ24 HZ27
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

DIODE B3N

Abstract: B2n diode 4.7 B2 zener a3 6 zener B2 Zener HZ22-2 zener diode B2 Zener Diode C3 5 B1 5.6 zener GRZZ0002ZB-A
Contextual Info: HZ-N Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G1625-0100 Rev.1.00 Mar 25, 2008 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application.

iball

Abstract: fils
Contextual Info: Schematic: Isolation Voltage: 1500Vrm s INPU T to OUTPUT , 500Vrm s(TD to RD) UTP SIDE OCU 35DuH Min ID O KH z 100m V BmADC Rise Time (1 0 —90%); 2.5ns Typical Insertion Loss (3 0 0 K H z -1 0 0 M H z ): —1.1 dB M axim um Insertion Loss (100M Hz-125M Hz): -1 .5 d B