I1202 Search Results

TC-2329A

Abstract: F16V 2SJ207 IEI-1213 iei-1209
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ207 P-CHAIMNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit: mm The 2SJ207, P-channel vertical type MOS FET, is a switching device which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require con­

2SK1271

Abstract: MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC iff— 2SK1271 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR r SWITCHING N-CHANNEL POWER MOS FET

iei-1209

Abstract: uPA1438 transistor CD 910 IC351 IC-3517 IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY uPA1438 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The ¿¿PA1438 is NPN silicon epitaxial D arlington (in millimeters) Power Transistor A rray that built in Surge Absorber and

k2341

Abstract: fet N-Channel transistor 250V DS NEC k 1995 transistor TC-8070
Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 2SK2341 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The2SK2341 is N-channel Power MOS Field Effect Transis­ in millimeters to r designed for high voltage sw itching applications.

NEC 2505

Abstract: 2sk2372 transistor 2sk 70 2sk2371 transistor 2sk transistor+2sk
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2371/2SK2372 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2371/2SK2372 is N-Charmel MOS Field Effect Transistor PACKAGE DIMENSIONS in millimeters designed fo r high voltage switching applications.

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 4-BIT SINGLE-CHIP MICROCONTROLLER The ¿¡PD75P0076 replaces the ,uPD750068’s internal m ask ROM with a one-tim e PROM and features expanded ROM capacity. Because the ¿¡PD75P0076 supports program m ing by users, it is suitable for use in prototype testing for system

CD3002

Abstract: 2SK1664 MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1664 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

D5555

Abstract: upd5555 single monostable multivibrator smd PD555 PD5555G PD5555 556 timer astable multivibrator monostable multivibrator smd single multivibrator smd ic 8pin
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT UPD5555 CMOS TIMER CIRCUIT The /xPD5555 is a CMOS version of the/iPC 617/1555 timer IC. Being a CMOS circuit, the ¿zPD5555 circuit requires only a little current, and outperforms the bipolar version in characteristics such as operating voltage, reset pin function,

APPLE A6 CHIP

Abstract: cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342
Contextual Info: 8 6 7 PDF CSA CONTENTS IMG5 17" REV E 11/01/05 SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 System Block Diagram FINO-DD 06/20/2005 TABLE_TABLEOFCONTENTS_ITEM 3 4 Power Block Diagram FINO-PC 06/20/2005 5 Table Items FINO-M23 08/26/2005 6

Contextual Info: DATA SHEET / M O S IN T E G R A T E D C IR C U IT ¿¿PD750064, 750066, 750068, 750064 A , 750066(A), 750068(A) 4-BIT SINGLE-CHIP MICROCONTROLLERS The ¿¡PD750068 is one of the 75X L series 4 -b it sin g le -ch ip m icro co n tro lle rs and has a data processing ca p ability

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT iiPD754144, 754244 4-BIT SINGLE-CHIP MICROCONTROLLERS DESCRIPTION The ¿¡PD754244 is a 4-bit single-chip m icrocontroller which incorporates the EEPROM for key-less entry application. It incorporates a 16 x 8-bit EEPROM, a 4-Kbyte mask ROM to store software, a 128 x 4-bit RAM to store the

1HT251

Abstract: 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313
Contextual Info: WmmËÊÊm W h A iW f W * i r*ïS >*••> ro s ît. ;<W«a 7 mm m$m 15ÎÏ3 Sktófefc?¿feS 11181 immm SI f ' ■ ' ' ' : m S ËÊB B S M M CnPABOHHMK nonynpoBQQHHKOBbiE nPHBOPbl TPAH3MCTOPbl MAflOI/ì MOLUHOCTM n O f l PEA A K L4H EPÌ A . B rO flO M E A O B A

pa1520

Contextual Info: DATA SHEET Compound Field Effect Power Transistor UPA1520B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE D E S C R IP T IO N PACKAG E The /¿PA1520B is N-channel Power MOS FET A rray that built in 4 circuits designed for solenoid, motor and lamp D IM E N S IO N S

Contextual Info: DATA SHEET NEC M B MOS FIELD i EFFECT POWER TRANSISTOR 2SK1749 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1749 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in m illim eters designed for solenoid, motor and lamp driver.

uPD780955

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ^PD780955 A 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION ¿¿PD780955(A) is a 7 8 K /0 s e rie s pro d u ct, w h ich s u p p o rts s u p e r-lo w p o w e r c o n s u m p tio n and is id e a l fo r m e te r co n tro l.

2SK1271

Abstract: MEI-1202 TEA-1035
Contextual Info: DATA SHEET NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR iff— 2SK1271 r SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS in millimeters 03.2 ±0.2 DESCRIPTION The 2SK1271 is N-channel MOS Field Effect Transistor de­ signed for high voltage switching applications.

2SK1282

Abstract: MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET i MOS FIELD EFFECT POWER TRANSISTOR 2 S K 1 2 8 2 , 1 2 8 2 -Z SWITCHING N-CHANIMEL POWER MOS FET

2SA1463

Abstract: 2SC3736 MEI-1202 MF-1134
Contextual Info: DATA SHEET • NEC SILICON TRANSISTOR 2SA1463 HIGH SPEED SW ITCHING PIMP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION PACKAGE DIM ENSIONS The 2SA1463 is designed for power amplifier and high speed switching applications. in millimeters FEATURES

IEI-1207

Abstract: PA1602 IC-3370 iso 1207 16PIN IC 3370
Contextual Info: DATA SHEET NEC COMPOUND äm m mFIELD m EFFECT POWER TRANSISTOR r „PAI 602 MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The ¡iPA1602 is Monolithic N-channel Power MOS FET Array that built CONNECTION DIAGRAM in 7 circuits designed for LED, Relay, Thermal Head, and so on.

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR À 2SK1796 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

K1995

Abstract: 2sk1995 TC-2453 ME112 transistor 2sk1995 ME1120 SAQ10
Contextual Info: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1995 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2S K1995 is N-channel M O S Field Effect Transistor designed fo r high voltage switching applications. FEATURES • Low On-state Resistance

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2413 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2413 is N -C hannel M O S F ield E ffect T ra n s is to r d e ­ PACKAGE D IM ENSIONS in m illim eter sig n e d fo r h ig h speed s w itc h in g a p p lic a tio n s .

E1 1000J UD

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ,uPD754144, 754244 4-BIT SINGLE-CHIP MICROCONTROLLERS DESCRIPTION The ¿¡PD754244 is a 4-bit single-chip m icrocontroller which incorporates the EEPROM for key-less entry application. It incorporates a 16 x 8-bit EEPROM, a 4-Kbyte mask ROM to store software, a 128 x 4-bit RAM to store the

2SK1595

Abstract: MEI-1202 TEA-1035 El-1207 APPLICATION NOTE TEA-1035
Contextual Info: SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1595 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in millimeters designed fo r solenoid, m otor and lamp driver. FEATURES • 4.5 ± 0 .2 10.0 ± 0 .3 Low On-state Resistance