I725D Search Results
I725D Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8836B Power GaAs FETs Chip Form Features • High power - PidB = 29.5 dBm at f = 8 GHz • High gain - G 1dB = 7.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C) |
OCR Scan |
S8836B 002210b S8836B 226mA |