IB50MA Search Results

Contextual Info: TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS M r ftrtTin7 IVIPSZ9U7 FOR HIGH-SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND 4.7 MAX , COMPLEMENTARY CIRCUITRY. FEATURES: Û4 5 . High DC Current Gain Specified : -0.1— -500mA

TRANSISTOR 1f

Abstract: 1F transistor 1F t transistor 1fTRANSISTOR
Contextual Info: TD62M3701F TENTATIVE oLOW SATURATION VOLTAGE DRIVER FOR MOTOR Unit in mm 8.2 ± 0.2 TD62M3701F is Multi Chip IC incorporates R R R H H B R H 6 low saturation discrete transistors which equipped bias resistor and free-wheeling diode. This IC is suitable for a battery use motor

MPS2907 toshiba

Contextual Info: M5E D • ID TT ES D DOIVBSR H IT0S4 TOSHIBA TRANSISTOR MPS2907 SILICON PNP EPITAXIAL TYPE PCT PROCESS T 2 cr< TOSHIBA (DISCRETE/OPTO) FOR HIGH-SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND COMPLEMENTARY CIRCUITRY. FEATURES : . High DC Current Gain Specified : -0.1

2n2222 kec

Abstract: 2222a KTN2222 KTN2222A transistor h pn 2222a
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTN2222/A EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx-10nA Max. ; V ce-60V, V eb(off)-3V. • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150mA, lB=15mA.