IBM SIGE Search Results
IBM SIGE Datasheets Context Search
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Contextual Info: Perspective PowerPC IBM’s New PowerPC Strategy Roadmap It’s exactly what you’d expect from IBM. Editor’s note: This article is reprinted with permission from IBM. It originally ran in the April, 2001, IBM PowerPC Processor News. You can view the original article at: |
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powerpc/newsletter/apr2001/lead 32-bit 64-bit/133 128-bit/166 32-bit/66 64-bit | |
5PAE
Abstract: BETA-100 5HPE ibm multi-emitter transistor BiCMOS
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350-nm TGD03011-USEN-04 5PAE BETA-100 5HPE ibm multi-emitter transistor BiCMOS | |
ASX 12 D Germanium Transistor
Abstract: 1394 audio subunit domino logic,dynamic logic ibm 6X86MX IBM-6x86MX Japan dvd cjc Transistor Data Book nand flash HET PR333 PR300 APPLE LM INVERTER
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toshiba laptop battery pack pinout
Abstract: GTX3000P IBM POWER3 processor driclad toshiba laptop schematic diagram MCP Technology Trend P2SC stacked transistors SOI RF IBM Microelectronics ASIC ibm ASIC SRAM
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64-bit S/390TM 256-Mb 60-micron 10-mil toshiba laptop battery pack pinout GTX3000P IBM POWER3 processor driclad toshiba laptop schematic diagram MCP Technology Trend P2SC stacked transistors SOI RF IBM Microelectronics ASIC ibm ASIC SRAM | |
PPC603
Abstract: "embedded systems" ethernet protocol meridian option 11 virtual tn RISCwatch Trace PPC601 0x00989680 RISCwatch RISCwatch API PowerPC Power ISA Architecture
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5HP ibm
Abstract: 5HP ibm SiGe HBT sige hbt germanium transistors NPN IBM Microelectronics Tech MOS Technology Spiral Inductor technology SiGe POWER TRANSISTOR IBM SiGe
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07G522035300* G522-0353-00 5HP ibm 5HP ibm SiGe HBT sige hbt germanium transistors NPN IBM Microelectronics Tech MOS Technology Spiral Inductor technology SiGe POWER TRANSISTOR IBM SiGe | |
IBM efuse
Abstract: BICMOS 250nm Nitride CMOS Stacked RF efuse MIM 205 IBM SiGe
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250-nm TGD03010-USEN-01 IBM efuse BICMOS 250nm Nitride CMOS Stacked RF efuse MIM 205 IBM SiGe | |
PPC403GC
Abstract: V360EPC 403GC ID31 LA25 V292PBC V3 Semiconductor
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403GC V360EPC PPC403GC V292PBC 33MHz 50MHz 40MHz ID31 LA25 V3 Semiconductor | |
ibm battery pinoutContextual Info: IBM SGRF4111 IBM SGRF4111EV Silicon-Germ anium 3-V PCS-Band: GSM Tri-Band VCO Advance Features • 880MHz/1850MHz center frequency for GSM Tri-Band • Efficiency and power management, ideal for battery mobile design • Flexible design with multiband VCO output |
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SGRF4111 SGRF4111EV 880MHz/1850MHz TSSOP-16 IBMSGRF4111 IS-95/IS-98 IS-136. ibm battery pinout | |
RF1113
Abstract: 43RF1113 tl945 IBM REV 2.7
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z/1900M 43RF1113 RF1113 43RF1113, F1113 43RF113 tl945 IBM REV 2.7 | |
IBM REV 2.8
Abstract: rev 1.5 ibm ibm rev 1.5
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43RF4111 43RF4111EV z/1850M -95/IS-98 IS-136. TSSOP-16 sgrf41111 IBM43RF4111 IBMSGRF4111 IBM REV 2.8 rev 1.5 ibm ibm rev 1.5 | |
lna c band
Abstract: ibm battery pinout
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IBM3604011S010 GSM900, DCS1800, PCS1900 GSM900 10-lead LNA4011 lna c band ibm battery pinout | |
3g call flow
Abstract: 24ghz radar sensors 180NM uwb radar ckt uwb transceiver 3g data call flow 802.11n transceiver sensor radar uwb uwb radar uwb radar sensor
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sw dip-4/sm
Abstract: dip-4/sm
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IBM3604012Q016 869-894MHz, 1930-1990MHz lna4012 sw dip-4/sm dip-4/sm | |
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s122kContextual Info: IBM 43RF1111 Preliminary SiGe High Dynamic Range 800-2000MHz Low Noise Amplifier Features • 0 .8 to 2G H z operation for cellular and digital wireless applications • Low power, single supply 3 volts • • High IIP3 and Low Noise meet demanding system requirements |
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43RF1111 800-2000MHz T23-6 -95/IS IS-136. s122k | |
Contextual Info: IBM3604012EVBA Application Note Dual-band CDMA Low Noise Amplifier Features Applications • IBM’s SiGe dual band CDMA dual band LNA • 869-894MHz cellular and 1930-1990MHz (PCS) receive bands operation • CDMA and AMPS handsets receiving in the Cellular 869-894MHz, and PCS 1930-1990MHz |
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IBM3604012EVBA 869-894MHz 1930-1990MHz 75-volt 869-894MHz, 1930-1990MHz lna4012 | |
germanium transistors PNP
Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR
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IBM43RF0100 IBM43RF0100EV 823Vdc. germanium transistors PNP SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR | |
Contextual Info: IBM 43RF1111 Preliminary SiGe High Dynamic Range 800-2000 MHz Low Noise Am plifier Features • 0.8 to 2G H z operation fo r cellular and digital w ireless applications • High IIP3 and Low Noise m eet dem anding system requirem ents • Low power, single supply 3 volts |
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43RF1111 T23-6 | |
Datasheet IBM Tri-Band GSM Low Noise AmplifierContextual Info: IBM3604011S010 Datasheet Tri-Band GSM Low Noise Amplifier Features Applications • IBM’s Silicon Germanium BiCMOS technology • Receive operation in the GSM900, DCS1800, PCS1900 bands • Receiver designs for single, dual, or triple mode handsets operating in the GSM900, DCS1800, |
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IBM3604011S010 GSM900, DCS1800, PCS1900 GSM900 10-lead lna4011 Datasheet IBM Tri-Band GSM Low Noise Amplifier | |
QFN-12
Abstract: IBM3115Q012 NC12 QFN12
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IBM3115Q012 QFN-12 IBM3115Q012 QFN-12) vco3115 NC12 QFN12 | |
photoreceiver
Abstract: VCSEL array, 850nm high speed photoReceiver Modules
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g522061500* G522-0615-00 photoreceiver VCSEL array, 850nm high speed photoReceiver Modules | |
fake bogus
Abstract: BLR MQ 6 B110 B134 B150 B200 B300 B600 dbljblen B4800
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PowerPC 401
Abstract: IBM43GAENGP0001
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12channel 07G522037102* G522-0371-02 PowerPC 401 IBM43GAENGP0001 | |
Contextual Info: IBMSGRF2113 IBMSGRF2113 EV SiGe 3-V PCS-Band: Tri-Band Image Reject Mixer with LNA Advance Features • 900MHz and 1900MHz operation for GSM900, DCS1800, and PCS1900 • Low side LO injection and High IF simplify filter response requirements • Low power with sleep mode and single supply |
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IBMSGRF2113 IBMSGRF2113 900MHz 1900MHz GSM900, DCS1800, PCS1900 TSSOP-16 |