IC 2 5/ 3-G-5 08 Search Results

SPI-214

Abstract: SPI-208 SPI-216 SG-401 GP1S23 PG-23FQ SG-402 SG-405 SG-406 SPI 204
Contextual Info: - 322- « £ Ixlü^ T '~i tt Ä Ic/If jfe M I 3t W I VCE •sat. m a x V (m A ) (m m ) (m m ) m in (% ) (m A ) 1 3 .2 1 .5 1 .5 20 5 1 .2 20 - - 2 .5 20 5 0 .4 20 S G -4 0 2 - - 5 0 .4 S G -4 0 5 - 0 .4 S G -4 0 6 - S G -4 0 7 - P G -2 3 F Q H '1 ^ S G -4 0 1

Contextual Info: -r B B - i- 0 .0 0 2 5 5 7 A -1 2 /0 8 IU I 1 .Plating G1—0 5iT gold over nickel G 2 -ln d ic a te gold flash G 3 - 1 0 J ’ gold over nickel G 4 - 1 5 J ’ gold over nickel G 5 - 3 0 J ’ gold over nickel 2.AKDM2557—1 2 /0 8 F=G1 G=G2 E=G3 D=G4 B=G5

L481

Abstract: PP641
Contextual Info: IDT7130SA/LA IDT7140SA/LA CMOS DUAL-PORT RAM 8K 1Kx 8-BIT In te g ra te d D e v ic e T e c h n o lo g y , Inc. FEATURES DESCRIPTION • High-speed access — Military: 2 5 /3 5 /5 5 /1 00ns (m ax.) — Commercial: 2 5 /3 5 /5 5 /1 00ns (max.) — Commercial: 20ns 7 1 3 0 inPLCC and T Q F P

Contextual Info: 3mm Dïalîght LED CBI Circuit Board Indicator Quad Level 568-0x0x-xx: LED P A R T NO- COLO R DATA S H E E T H IG H E F F IC IE N C Y - LE D T Y P E 01 568-0101-111 R /R /R /R 5 6 8 -0 1 0 2 -2 2 2 G /G /G /G 5 6 8 -0 1 0 2 -3 2 3 G /Y /G /Y 5 6 8 -0 1 0 3 -2 3 2

Contextual Info: PA R T N O . RRR- 1 RRR- 2 H O L E D IA . R A N G E .1 8 8 - .2 0 8 [4 .7 6 - 5 .2 8 ] PA N EL T H IC K N ES S " A " R EF .0 5 9 - .1 3 8 [1 .5 - 3 .5 ] .1 4 [3 .6 ] .1 3 8 - .2 1 7 [3 .5 - 5 .5 ] .1 7 [4 .4 ] GROMMET PIN A .08 2.0 .43 11.0 "A" .31 8.0 REF

Contextual Info: In te g ra te d D e v ic e T e c h n o lo g y , Inc. HIGH-SPEED 4K X 8 FOURPORT STATIC RAM IDT70S4S/L PRELIMINARY FEATURES: DESCRIPTION: • H igh-spee d a c c e s s — M ilitary: 2 0 /2 5 /3 5 /4 5 n s m ax. — C o m m e rcia l: 15 /2 0 /2 5 /3 5 /4 5 n s (m ax.)

Contextual Info: T em ic J/SSTJ210 Series S e m i c o n d u c t o r s N-Channel JFETs J210 J211 J212 SSTJ211 SSTJ212 Product Summary Part Number V G S off (V ) V ( b r )G SS M i n ( V ) gfe Min (mS) Idss Min(mA) 3 210 -1 to -3 -2 5 4 2 J /S S T J 2 U - 2 .5 to - 4 .5 -2 5

AM99C328-70

Contextual Info: ADV M I C R O { M E M O R Y } fiA 0257528 ADV M IC R O ]>Ë 0 2 5 7 5 2 0 0 D 2 M 7 7 b G iM EM O RY Am99C328 88D r 24776 T -4 6 - 2 3 - 1 4 32,768 x 8 Static R /W Random-Access Memory PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS Fast access time — 3 5 /4 5 /5 5 /7 0 ns Maximum

A12U smd

Abstract: A5 .1 u SMD
Contextual Info: a WHITE /MICROELECTRONICS WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES 3 2 p in , R e c ta n g u la r C e ra m ic L e a d le s s C hip C a rr ie r P a ck a g e 601 • A c c e s s T i m e s 15, 17, 2 0, 2 5, 3 5, 4 5, 5 5 n s ■ M IL - S T D - 8 8 3 C o m p l i a n t D e v ic e s A v a i l a b l e

15 pin to usb

Abstract: Molex USB 3.0
Contextual Info: 7.5 ± 0 .3 PIN 4 IA IB IC IF I ~ì 15 ±0.3 PIN 1 I - 5 ± 1 5 TYP K 11.75— V -4 8 ±0.8 - -LE N G TH - □ □ . USB 28# /20* 5 0 0 0 + 0 /- 8 0 887808202 887800043 USB 2 8 # /22* 3 3 3 0 + 0 /- 5 0 887808203 887800043 887283400 USB 2 8 */2 4 # 2 0 8 0 + 0 /- 4 0

Contextual Info: F -1 9 9 -1 u samîëc M W -1 6 -0 3 -G -D -2 3 5 -0 7 5 -P *0 ^ M W -16 - 0 3 —G -D - 1 8 5 - 1 25 M W -2 5 -0 3 —G - D —210-100 % MW—10 - 0 3 - G - D - 1 50-160 I- 1 jOOmm t l \ . S P E C IF IC A T IO N S 1 M a te s w ith : CLM, MLE, QCLM Materials:

Contextual Info: a WHITE /MICROELECTRONICS WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES 3 2 p in , R e c ta n g u la r C e ra m ic L e a d le s s C hip C a rr ie r P a ck a g e 601 • A c c e s s T i m e s 15, 17, 2 0, 2 5, 3 5, 4 5, 5 5 n s ■ M IL - S T D - 8 8 3 C o m p l i a n t D e v ic e s A v a i l a b l e

CXP402

Abstract: CXP482 FCR16
Contextual Info: CXP402 - C L Rd C ohni] 15 0 8 Vdd- 5 F C R 1 6 .9 3 M 2 G CV] < F 1 g .a ~ d T a * 20 Cdeg] T y p ic a ) a. ? 5 3 1 V IH / V IL CV] • y.ij 3.2 .3 3 . VIH i — * viL 14 -1 7 3,4 1.2 3.2 i¿ : 4,9 4,9 4,9 ! CV3 b. V2H/V2L 9 5 3,4 1.3 3 1 -1 .5 .3 .1

887808238

Abstract: 88780
Contextual Info: 7.5 ± 0 .3 PIN 4 IA IB IC IF I ~ì 15 ±0.3 PIN 1 I - 5 ± 1 5 TYP K 11.75— V -4 8 ±0.8 - SEE N 0 T E i3 -LE N G TH - □ □ . USB 28# /20* 5 0 0 0 + 0 /- 8 0 887808202 887800043 USB 2 8 # /22* 3 3 3 0 + 0 /- 5 0 887808203 887800043 887283400 USB 2 8 */2 4 #

Contextual Info: Z E IC H N U N G G ESCHÜTZT DURCH C O P Y R IG H T MASS 2 . 34 WAR 2 . 5 4 AMP DEUTSC HLAN D GMBH 1 HASS 3 . 0 1 0 . 2 A L L E RECHTE 2 Z E IC H N U N G 3 L flT L lN G E VON 3 . 0 VO RBEHALTEN DATUM ÄNDERUNG REV. 19 8 8 WAR 3 . 0 IN ,2 .2 H IN ZU ALLG .

SCR Handbook, General electric

Abstract: C122D SCR thyristor GE type GE C220B 2N1772 C122D GE FZJ 131 2N1771A General electric SCR C220 C116F 2N1770
Contextual Info: G ETYPE JED EC C10 C1 1 C15 C116 2N 1770A77A 2 N 1 7 7 0 -7 8 - - 25-400 2 5 -6 0 0 C l 2 2 -3 * C 2 2 0 -2 C126 C36 C37 - - 2 N 1842-50 - 2 5 -6 0 0 25 600 E L E C T R IC A L S P E C IFIC A T IO N S | V O LTA G E RANGE 25-600 i 5 0 -6 0 0 2 5 -6 0 0 2 5 -6 0 0

Contextual Info: m a n A M P <c o m p a n y Silicon Bipolar MMIC Cascadable Amplifier MA4TD0800 Features t * * Chip Outline Drawing1, 2 3, 4 , C asc ad ab le 5 Oil G ain B lock H igh G ain : 32 5 dB T y p ic alG ain @ 0 1 G H z 18 5 dB T y p ic a lG a in @ 1.0 G H z Low N o is s F ig u ie : 3 D dB T ypical ID GH z

Contextual Info: R 0 2 5 C = 3 OO EH M 3 + / - 107. N T L : = - 3 . l'/./C G 3 5 C □ P E P A T I NG P A N C E ¡-55 TE 150 C C T E R A G G F:ANGE !- 6 5 TE 150 G ^ T H E R M A L T I M E CG NC T A N T :G G G C MA X * n I C G I F'A T IC N C C N C T A N T :G m W / C M IN POWER RATING

PLR8T

Abstract: Thomson-CSF diodes de redressement diodes redressement thomson
Contextual Info: S G S-THOMSON s ic y THOMSON-CSF I 7 1 2 1 2 3 ? 0 0 0 2 3 1 5 PLR2T - PLR8T - PLR 15T 59C 0 2 3 4 5 d iv is io n s E M ic o N D u c T E u f tr D T+03 */3. FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES Io : 1 THEIR HIGH EFFICIENCY A N D HIGH RELIABILITY COMBI­

Contextual Info: 13 12 10 3 CKT 0 PTI0 0 m ± a ° 5 TYP 2.55 ±0.08 .0 0 5 ± .0 0 2 .100 ±.005 e-0- -e-O -e-G -© -e-e 06 08 10 e- e-e-G -o-e-Q -e-e-e- 12 2.50 ±0.08 10 .100 ±.003 REF 16 18 RGB L A Y O U T : CO M PO N EN T SIDE T Y P IC A L RGB TH IC KN E 2 20 0 3 6 /.0 9 3

Contextual Info: Tem ic siuconix_ SÌ4953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary «"DSfon Î 2 ) I d (A) 0 .0 5 3 @ V G S = - 1 0 V ± 4 .9 0 .0 9 5 @ V GS = - 4 .5 V ± 3 .6 V d S (V ) 30 S2 O S O -8 s, Q I i n G, [X ~T~1 D ,

c3355

Contextual Info: R 0 £ 5 C = 5 Û O O G H M C + / - 107. NTL: = - 3 .5 ' / . / C E 2 5 C O P E R A T I N G R A N G E ¡- 55 T G 1 5 0 C C T G R A G G R A N G E — b5 TG 150 G ^ T H G R M A L T IM G C D N G T A N T :G G G G MA X * n IC CI P A T I G N C G N C T A N T :C m W P C M IN

Contextual Info: a W MS128K8-XXX WHITE /MICROELECTRONICS 128Kx8 MONOLITHIC SRAM FEATURES • A c c e s s T i m e s 1 5 , 1 7 , 2 0, 2 5, 3 5, 4 5, 5 5n s ■ R a d ia tio n T o l e r a n t D e v ic e s A v a i l a b l e 3 2 p in , R e c ta n g u la r C e ra m ic L e a d le s s C hip C a rr ie r

molex pci express

Contextual Info: 10 3 0 .0 0 10 M IC R O IN C H G O L D 679109000 679109001 QUALITY G E N E R A L TO LE R A N C E S SYMBOLS U N LE S S SPEC IFIED =0 T V=° = mm INCH 4 PLACES 3 PLACES ± — 2 PLACES ± 0 .2 5 1 PLACE ± 0 .2 5 AN G U LAR ± 3 DIMENSION S T Y LE MM O N LY