IC 28256 Search Results

Contextual Info: MP28256 21V, 3A 500kHz Synchronous Step-Down Coverter The Future of Analog IC Technology DESCRIPTION FEATURES The MP28256 is a synchronous rectified stepdown switch mode converter with built in internal power MOSFETs. It offers a very compact solution to achieve 3A continuous

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: DALLAS DS1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 A12 A7 • Data is automatically protected during power loss A6 I1 1 28 11 Vcc 11 2 1I 3 27 11 WE

Contextual Info: DS1230Y/AB DALLAS DS1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Data retention in the absence of V cc • Data is automatically protected during the decrease in V cc at power loss A14 I1 1 A12 I1 A7 I1 A6 I1 A5 I1 A4

Contextual Info: D S 1630Y/A B DALLAS s e m ic o n d u c to r FEATURES DS1630Y/AB Partitionable 256K NV SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A 14 11 1 • Data is automatically protected during power loss A 12 11 • Directly replaces 32K x 8 volatile static RAM or

EEPROM 28256

Abstract: DS1230 DS1230AB DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS9034PC
Contextual Info: D S 1230Y /A B DALLAS DS1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 1 0 years m inim um data retention in the absence of external power • Data is autom atically protected during pow er loss • R eplaces 32K x 8 volatile static RAM, EEPROM or

34-PIN

Abstract: DS1230 DS1230W DS9034PC
Contextual Info: D S 1230W PRELIMINARY DALLAS s e m ic o n d u c to r FEATURES DS1230W 3.3V 256K Nonvolatile SRAM PIN ASSIGNMENT • 1 0 years m inim um data retention in the absence of external power • Data is autom atically protected during pow er loss • R eplaces 32K x 8 volatile static RAM, EEPROM or

ds1630AB-120

Abstract: EEPROM 28256 34-PIN DS1630 DS1630AB DS1630Y ds1630y120
Contextual Info: D S 1630Y /A B DALLAS s e m ic o n d u c to r . DS1630Y/AB Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • 10 years m inim um data retention in the absence of external power • Data is autom atically protected during pow er loss • Directly replaces 32K x 8 volatile static RAM or

28256 eeprom

Abstract: EEPROM 28256 DS1235AB DS1235Y AO-A14 RAM MEMORY 28256 AB15C DS123SY
Contextual Info: DAI I AS DS1235Y/AB s e m ic o n d u c t o r 256K Nonvolatile SRAM PIN DESCRIPTION FEATURES • Data retention in the absence of Vcc • Data is automatically protected during power loss A u l 1 2 8 1 VC C A12l 2 2 7 l WB A7l 3 26 1 A13 I 4 25 1 A8 A5 ! 5

Contextual Info: D S 1 6 3 0 Y /A B DALLAS s e m ic o n d u c to r FEATURES • 10 years m inimum data retention in the absence of external power • Data is autom atically protected during power loss • Directly replaces 32K x 8 volatile static RAM or EEPROM • W rite protects selected blocks of m em ory when pro­

TEKELEC 297

Abstract: 95a 324 D2B2 la 78042 0uf0 D5521 GE C20C
Contextual Info: APPLICATION BRIEF AB-41 September 1988 Software Serial Port Implemented with the PCA BETSY JONES ECO APPLICATIONS ENGINEER Intel C orporation, 1988 O rder Number: 270531-002 In te l C o r p o r a tio n m a k e s n o w a rra n ty fo r th e u s e o f its p r o d u c ts a n d a s s u m e s n o re s p o n s ib ility fo r a n y e rro rs w h ic h m a y

chw marking sot23

Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
Contextual Info: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu

hall marking code A04

Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
Contextual Info: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”

VL VM VH lithium

Contextual Info: DS1630Y/AB DALLAS SEMICONDUCTOR DS1630Y/AB Partitioned 256K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAMs or EEPROMs • Write protects selected blocks of memory regardless

Contextual Info: XICOR SHE INC D * m i? 4 3 aaaam? b A D V A N C E D IN FO R M A TIO N Commercial Industrial 64K X28C64 X28C64I 8K x 8 Bit Electrically Erasable PROM T~y¿-/3~Z7 DESCRIPTION FEATURES • LOW Power CMOS —60 mA Active Current Max. —200 /aA Standby Current Max.

EEPROM 28256

Abstract: 34-PIN DS1230 DS1230W DS1230W-150 DS9034PC
Contextual Info: DS1230W 3.3V 256k Nonvolatile SRAM ww w.dalsem i.com FEATU R E S • 10 years minimum data retention in the absence of external power ■ Data is automatically protected during power loss ■ Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory ■ Unlimited write cycles

LG 631 9R

Abstract: L9132 l9134 L9737 l9724 EL504 AX6042 EL519 SA852 L9727
Contextual Info: Section 11. Worldwide Representatives and Distributors CONTENTS Micrel Sales O ffices. 347 U.S. Sales Representatives. 348

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

Contextual Info: D S 1 2 3 0 Y /A B DALLAS SEMICONDUCTOR FEATURES DS1 230Y/ AB 256K N onvolatile SRAM PIN ASSIGNMENT A14 111 281 A12 112 E 271IW A7 113 261IA13 A6 114 251IA8 A5 115 241IA9 A4 116 231IA11 A3 117 221I A2 118 211I A10 A1 119 201I^ A0 1110 191I DQ7 DQ01111 181I DQe

Contextual Info: DS1630Y/AB DALLAS DS1630Y/AB Partitioned 256K NV SRAM SEMICONDUCTOR PIN ASSIGNMENT FEATURES • Data retention in the absence of V^c • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAMs or EEPROMs • Write protects selected blocks of memory regardless

Contextual Info: DS1730Y/YLPM DALLAS SEMICONDUCTOR DS1730Y/YLPM 3 Volt Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of V cc • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAMs or EEPROMs

CSM 6850

Abstract: mg80960xa 80960XA BV EI 303 3628 80960CA 80960KA 80960KB 80960MC M8259A 77106
Contextual Info: 80960XA EMBEDDED 32-BIT MICROPROCESSOR WITH 33RD TAG BIT TO SUPPORT OBJECT-ORIENTED PROGRAMMING AND DATA SECURITY M ilita ry • Implements JIAWG 32-Bit ISA Standard ■ High-Performance Embedded Architecture — 25 MIPS Burst Execution at 25 MHz — 9.4 MIPS* Sustained Execution at

34-PIN

Abstract: DS1230 DS1230W DS1230W-100 DS1230W-150 DS9034PC
Contextual Info: DS1230W 3.3V 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory