IC 5657 Search Results
IC 5657 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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D1U54T-M-2500-12-HB4C | Murata Manufacturing Co Ltd | 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR |
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D1U74T-W-1600-12-HB4AC | Murata Manufacturing Co Ltd | AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs |
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SCL3400-D01-004 | Murata Manufacturing Co Ltd | 2-axis (XY) digital inclinometer |
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SCC433T-K03-PCB | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor on Evaluation Board |
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SCC433T-K03-10 | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor |
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IC 5657 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IRGP4690DPbF IRGP4690D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 90A, TC = 100°C C C tSC ≥ 5 s, TJ max = 175°C G VCE(on) typ. = 1.70V @ IC = 75A E n-channel Applications • Industrial Motor Drive • Inverters |
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IRGP4690DPbF IRGP4690D-EPbF O-247AD IRGP4690D-EP O-247AC JESD22-A114) | |
0/b40 B2 RECTIFIER 400V
Abstract: IRGP4266 2.5/b40 B2 RECTIFIER 400V
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IRGP4266PbF IRGP4266-EPbF IRGP4266-EPbF O-247AD O-247AC O-247AC 0/b40 B2 RECTIFIER 400V IRGP4266 2.5/b40 B2 RECTIFIER 400V | |
irg7ph50
Abstract: IRG7PH50K10DPBF IRG7PH50K10D 50A 1200V IRG7PH50K10D-EPBF
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IRG7PH50K10DPbF IRG7PH50K10D-EPbF IRG7PH50K10DPbF RG7PH50K10DEPbF IRG7PH50K10D-EPBF IRG7PH50K10DPbF/IRG7PH50K10D-EPbF O-247AC O-247AD JESD47F) irg7ph50 IRG7PH50K10D 50A 1200V | |
Contextual Info: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C G G IC = 20A, TC =100°C TJ max = 150°C VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating Microwave ovens |
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IRG7PK35UD1PbF IRG7PK35UD1-EPbF IRG7PK35UD1PbFÂ 247ACÂ IRG7PK35UD1â 247ADÂ | |
UC1698
Abstract: LCD Controller UC1698U
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128RGB 16-bit UC1698 LCD Controller UC1698U | |
Contextual Info: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C C C IC = 20A, TC =100°C TJ max = 150°C G G VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating Microwave ovens |
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IRG7PK35UD1PbF IRG7PK35UD1-EPbF IRG7PK35UD1PbFÂ 247ACÂ IRG7PK35UD1â 247ADÂ | |
Contextual Info: IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C G G IC = 25A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 15A G IRG7PH37K10DPbF TO-247AC E |
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IRG7PH37K10DPbF IRG7PH37K10D-EPbF IRG7PH37K10DPbFÂ 247ACÂ IRG7PH37K10Dâ 247ADÂ O-247AC O-247AD | |
Contextual Info: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G G C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 25A E n-channel Applications G IRG7PH44K10DPbF |
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IRG7PH44K10DPbF IRG7PH44K10D-EPbF IRG7PH44K10DPbFÂ 247ACÂ IRG7PH44K10Dâ 247ADÂ O-247AC O-247AD | |
Contextual Info: IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 50A, TC =100°C tSC 10µs, TJ max = 150°C G VCE(ON) typ. = 1.9V @ IC = 35A G E n-channel Applications • Industrial Motor Drive |
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IRG7PH50K10DPbF IRG7PH50K10D-EPbF IRG7PH50K10DPbFÂ IRG7PH50K10Dâ O-247AC O-247AD JESD47F) | |
IRG7Contextual Info: IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor C VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ max = 175°C E G VCE(ON) typ. = 1.7V @ IC = 48A C G IRGP4263PbF TO247AC E n-channel Applications • Industrial Motor Drive • Inverters |
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IRGP4263PbF IRGP4263-EPbF O247AC O-247AD IRG7P4263PbF IRG7P4263-EPbF O-247AC IRG7 | |
Contextual Info: IRGP4760DPbF IRGP4760D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 60A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 48A G IRGP4760DPbF TO-247AC E n-channel Applications |
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IRGP4760DPbF IRGP4760D-EPbF IRGP4760DPbFÂ 247ACÂ IRGP4760Dâ 247ADÂ IRGP4760DPbF/IRGP4760D-EPbF O-247AC JESD47F) O-247AD | |
Contextual Info: IRGP4790DPbF IRGP4790D-EPbF FOR REVIEW ONLY Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C E G VCE(ON) typ. = 1.7V @ IC = 75A C G IRGP4790DPbF TO-247AC |
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IRGP4790DPbF IRGP4790D-EPbF IRGP4790DPbFÂ 247ACÂ IRGP4790Dâ 247ADÂ O-247AD | |
Contextual Info: IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor C VCES = 650V G G IC = 60A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 48A C G IRGP4263PbF E n-channel Applications • Industrial Motor Drive • Inverters |
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IRGP4263PbF IRGP4263-EPbF IRGP4263PbFÂ IRGP4263â IRG7P4263PbF IRG7P4263-EPbF O-247AC O-247AD IRGP4263PbF/IRGP4263-EPbF JESD47F) | |
Contextual Info: IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C G G IC = 40A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 24A C n-channel Applications G Gate E G IRGP4262D-EPbF |
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IRGP4262DPbF IRGP4262D-EPbF O-247AD O-247AC | |
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Contextual Info: IRGP4760PbF IRGP4760-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 60A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 48A C n-channel G Gate C Collector Features E Emitter |
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IRGP4760PbF IRGP4760-EPbF IRGP4760â 247ADÂ IRGP4760PbFÂ 247ACÂ IRGP4760PbF/IRGP4760-EPbF O-247AC JESD47F) O-247AD | |
Contextual Info: IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C G G IC = 25A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 15A G IRG7PH37K10DPbF TO-247AC E |
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IRG7PH37K10DPbF IRG7PH37K10D-EPbF IRG7PH37K10DPbFÂ 247ACÂ IRG7PH37K10Dâ 247ADÂ O-247AC O-247AD | |
Contextual Info: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G G C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 25A E n-channel Applications G IRG7PH44K10DPbF |
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IRG7PH44K10DPbF IRG7PH44K10D-EPbF IRG7PH44K10DPbFÂ 247ACÂ IRG7PH44K10Dâ 247ADÂ O-247AC O-247AD | |
Contextual Info: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G GC VCE(ON) typ. = 1.9V @ IC = 25A E G Gate • Industrial Motor Drive |
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IRG7PH44K10DPbF IRG7PH44K10D-EPbF IRG7PH44K10DPbFÂ 247ACÂ IRG7PH44K10Dâ 247ADÂ O-247AC O-247AD | |
Contextual Info: IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor C VCES = 650V G G IC = 54A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 48A C G IRGP4263PbF E n-channel Applications • Industrial Motor Drive • Inverters |
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IRGP4263PbF IRGP4263-EPbF IRGP4263PbF RGP4263EPbF IRG7P4263PbF IRG7P4263-EPbF IRGP4263PbF/IRGP4263-EPbF O-247AC O-247AD JESD47F) | |
Bridge Rectifier, 35A, 600VContextual Info: IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 50A, TC =100°C tSC 5µs, TJ max = 175°C G C G IRGP6650DPbF TO-247AC E VCE(ON) typ. = 1.65V @ IC = 35A n-channel |
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IRGP6650DPbF IRGP6650D-EPbF IRGP6650DPbFÂ 247ACÂ IRGP6650Dâ 247ADÂ IRGP6650DPbF/IRGP6650D-EPbF O-247AC O-247AD Bridge Rectifier, 35A, 600V | |
Contextual Info: IRGP4266DPbF IRGP4266D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V G G C IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 75A C G IRGP4266DPbF TO-247AC E n-channel |
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IRGP4266DPbF IRGP4266D-EPbF IRGP4266DPbFÂ 247ACÂ IRGP4266Dâ 247ADÂ O-247AC IRGP4266DPbF/IRGP4266D-EPbF | |
Contextual Info: IRGP4266DPbF IRGP4266D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 75A G E E G IRGP4266DPbF TO-247AC n-channel Applications |
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IRGP4266DPbF IRGP4266D-EPbF IRGP4266DPbFÂ 247ACÂ IRGP4266Dâ 247ADÂ O-247AC page11. | |
Contextual Info: IRGP4263DPbF IRGP4263D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 60A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 48A G E E G IRGP4263DPbF TO-247AC n-channel Applications |
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IRGP4263DPbF IRGP4263D-EPbF IRGP4263DPbFÂ 247ACÂ IRGP4263Dâ 247ADÂ JESD47F) O-247AD | |
Contextual Info: IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar Transistor VCES = 650V C IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 75A G E G Gate Low VCE(ON) and switching Losses Square RBSOA and Maximum Junction Temperature 175°C |
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IRGP4266PbF IRGP4266-EPbF O-247AC O-247AD |