IC 810 AUDIO POWER AMPLIFIER Search Results

810AS

Abstract: TBA 810 amplifier TBA810 TBA 810 AT TDA 810 amplifier IRF 810 810S TBA 810 audio amplifier TBA810S TBA810AS
Contextual Info: TBA 810S LINEAR I N T E G R A T E D C I R C U I T S 810AS 7 W AUDIO POWER AMPLIFIER WITH THERMAL SHUT-DOWN T he T B A 810 S is a m o n o lith ic in te g ra te d c ir c u it in a 12-lead q u a d in -lin e p la s tic p a cka g e , in te n d e d fo r use as a lo w fre q u e n c y c la s s B a m p lifie r.

transistor BD 522

Abstract: BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD801 BD802 BD808 BD810
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor ‘Motorola Preferred Device 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi

NTE2328

Abstract: audio amplifier IC 810 IC 810 audio Power Amplifier ic 810 NTE2329
Contextual Info: NTE2328 NPN & NTE2329 (PNP) Silicon Complementary Transistors Audio Power Output TO3PBL Type Package Features: D Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

nte2328

Abstract: audio amplifier IC 810
Contextual Info: NTE2328 NPN & NTE2329 (PNP) Silicon Complementary Transistors Audio Power Output Features: D Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

RM1S

Abstract: automatic room power control circuit block diagram TBA520 TBA810S TAA630S TBA510 TBA970 iA781 am ssb fm demodulator a3089
Contextual Info: CONSUMER CIRCUIT SELECTION GUIDE BY FUNCTION TV Circuits Function AFT M 3064 Sound IF Amp. Lim. Detector //A 3065 Video Amplifier TBA970 Chroma Processing NTSC AiA746 , n A 780 , M 781 , /uA787 , M 788 Chroma Processing PAL TAA 630 S, TBA 510 , TBA 520 , TBA 540 , TBA 560 C, TBA990

A1312

Abstract: tba810s st TAA630S TBA510 TBA520 TBA970 A3065 double channel double balanced demodulators IF am VIDEO DEMODULATOR synchronous color killer circuits block diagram
Contextual Info: CONSUMER CIRCUIT SELECTION GUIDE BY FUNCTION TV Circuits Function AFT M 3064 Sound IF Am p. Lim. Detector //A 3065 Video Amplifier T BA 970 Chrom a Processing N T S C AiA746 , n A 780, M 781, /uA787 , M 788 Chrom a Processing P A L TAA 630 S, T BA 510 , T B A 520, T B A 540 , T B A 560 C, TBA 990

KIA6419

Abstract: KIA6451P amplifier 32 ohm 200mW low thd
Contextual Info: K E G SEMICONDUCTOR TECHNICAL DATA KIA6419P/F s il ic o n m o n o l it h ic in t e g r a t e d c ir c u it LOW POWER AUDIO AMPLIFIER The KIA6419P/F is a low power audio amplifier integrated circuit intended primarily for telephone applications, such as in speakerphones. It provides

CL10J

Abstract: PS219A4-ASTX KIA6419 KIA6451P
Contextual Info: K E G SEMICONDUCTOR TECHNICAL DATA KIA6419P/F s il ic o n m o n o l it h ic in t e g r a t e d c ir c u it LOW POWER AUDIO AMPLIFIER The KIA6419P/F is a low power audio amplifier integrated circuit intended primarily for telephone applications, such as in speakerphones. It provides

KIA6451P

Abstract: KIA6419 rcd 160 5 120 ohm KIA6419P
Contextual Info: SEMICONDUCTOR KIA6419P/F TECHNICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT LOW POWER AUDIO AMPLIFIER W L G H D P d T 5 1 4 FEATURES Wide Operating Supply Voltage Range 2-16 volts -Allows Q DIM MILLIMETERS _ 0.2 A 9.6 + _ 0.2 B 6.45 + _ 0.1 D 1.52 + _ 0.1 d

Contextual Info: BL34018 Handsfree speakerphore circuit Outline The BL 34018 Speakerphone integrated circuit incorporates the necessary amplifiers,attenuators, and control functions to produce a high quality hands-free speakerphone system.Included are a microphone amplifier,a power audio amplifier for

transistor c 3206

Abstract: BD808 transistor BD 139 IC CD 3207 BD807 bd810
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP TVansistor *Motorola Prwtorrtd Devfc« 10 AMPERE POWER TRANSISTORS PNP SILICON 60,80 VOLTS 90 WATTS . . . designed for use ¡n high power audio amplifiers utilizing complementary or quasi

TDA 810 amplifier

Abstract: TDA1015 audio preamplifier circuit diagram CH50
Contextual Info: TDA1015 A_ _ _ _ _ _ 1 TO 4 W AUDIO PO W ER AMPLIFIER The T D A 1 0 1 5 is a m o n o lith ic integrated audio a m p lifie r c irc u it in a 9-lead single in-line S IL plastic package. The device is especially designed fo r p ortable radio and recorder applications and delivers up

PJ34119

Abstract: 10BSC 27BSC PJ34119CD PJ34119CS IC 810 audio Power Amplifier if audio amplifier 16 dip
Contextual Info: PJ34119 Low Power Audio Ampllfier RECOMMENDED OPERATING CONDITIONS T he PJ34119 is a low power audio amplifier intergrated circuit DIP-8 intended （primarily）for telephone applications， such as SOP-8 in speakerphones. It provides differential speaker outputs to

BDX96

Contextual Info: • BDX92 BDX94 BDX96 ^ 5 3 1 3 1 QDHQQSI 3 N AMER PHILIPS/DISCRETE 3SE D JV SILICON EPITAXIAL B A SE POW ER TRAN SISTO RS P-N-P transistors in TO-3 envelope for audio output stages and general amplifier and switching applications, N-P-N complements are BDX91, B D X 9 3 and BDX95.

sio lpc chip intel p4 motherboard

Abstract: rdi-dmt-1206 980020 NAND RJMG-5312-11-01 Amphenol RJMG intel 810 MOTHERBOARD pcb CIRCUIT rdi DMT-1206 intel 810 MOTHERBOARD pcb CIRCUIT diagram c.i GD75232 smd 82801 g SCHEMATIC DIAGRAM
Contextual Info: Intel 810 Chipset Design Guide June 1999 Order Number: 290657-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability

op amp ua 743

Abstract: NE5539 Replacement D 795 A SSM-2139 ssm2139
Contextual Info: Selection Trees Operational Amplifiers OPERATIONAL AMPLIFIERS I PRECISION Input Offset Voltage < 1 mV LOW POWER I s u p p i .y A D 705 O P -97 P M -1008 P M -1012 A D 7 0 6 (D u a l g 1 mA) O P -200 (D u a l) O P -297 (D u a l) A D 7 0 4 (Q u ad ) O P -400 (Q u ad )

TCA 810

Abstract: TCA940 TBA audio power amplifiers TBA 810 audio amplifier TBA810 tca 770 TBA 810 amplifier TCA94010W 34320F 5W AUDIO AMPLIFIER CIRCUIT DIAGRAM
Contextual Info: Sem iconductors S G S -A T E S Linear I.C.'s -A u d io Am plifiers TCA94010W A u d io Pow er Amplifier C O N N E C T IO N D IA G R A M R EFERENCE T A B L E Supply Voltage Code Stock No. NC 11 NC 34320F NC 10 Ground TCA940 [ Output a Ground D E SC R IPTIO N

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD L4863 CMOS IC DUAL 2.2W AUDIO AMPLIFIER PLUS STEREO HEADPHONE FUNCTION SOP-16 SOP-18 DESCRIPTION The UTC L4863 is a dual bridge-connected audio power amplifier. It combines dual bridge speaker amplifiers and stereo headphone amplifiers on one chip to simplify audio system design.

L4863

Abstract: HTSSOP-20 L4863-D16-T L4863-S16-R L4863-S16-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD L4863 CMOS IC DUAL 2.2W AUDIO AMPLIFIER PLUS STEREO HEADPHONE FUNCTION SOP-16 SOP-18 DESCRIPTION The UTC L4863 is a dual bridge-connected audio power amplifier. It combines dual bridge speaker amplifiers and stereo headphone amplifiers on one chip to simplify audio system design.

BD807

Abstract: transistor 1127 PJ 0446 pj 809 ADC ic adc 809 pj 807 MOTOROLA transistor 413 ADC 808 BD805 adc 809
Contextual Info: MOT O RO LA SC XSTRS/R F 15E D | t>3b?2S4 GGfl47bl 5 | 7^/j MOTOROLA SEM ICONDUCTO R TECHNICAL DATA PLASTIC HIGH POWER SILICON NPN TRANSISTOR 10 AMPERE POWER TRANSISTOR . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

2sk125

Abstract: SLD300 photo magneto electric 1T32 SLD203 ic dm 311 SGM2006M "CD pickup" 1T339
Contextual Info: 2. 1 Index by Usage Variable Capacitance Diodes Type 1T32 1T32A 1T33 1T33A Package 2P Mini mold 1T33C 1T362 1T363 2P Super Mini mold 1T364 1T359 2P Mini mold 1T360 Remark Application Voltage V) Page Smaller package UH F/V H F tuning 31 AC: 3% (1T32A: 2%)

ADC 808

Abstract: bd 808 BD808 BD810 T1 BD 139
Contextual Info: MOTOROLA Order this document by BD808/D SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi

Contextual Info: 2SD916 N P N = M t & TRIPLE DIFFUSED PLANER TYPE POWER DARLINGTON » y u - i - m J> b > -«*§ GENERAL PURPOSE POWER AMPLIFIER m : Outline Drawings • 4#^ i Features • hFE*''ifttv High D. C. current gain • Low saturation voltage • High reliability

A158 TI IC

Abstract: A158 IC 2SD916 HRF300
Contextual Info: 2SD916 TRIPLE DIFFUSED PLANER TYPE POWER DARLINGTON N P N = M t& » y u -i-m J > b > GENERAL PURPOSE POWER AMPLIFIER m -« *§ : Outline Drawings • 4 # ^ i Features • hFE*''ifttv High D. C. current gain • Low saturation voltage • High reliability