IC 824 J Search Results

Contextual Info: AWT919D TX POWER MMIC E W iDIGIG* Advanced Product Information Your GaAs IC Source REV: 1 900/1900 MHz Dual Band DAMPS GaAs Power Amplifier IC DESCRIPTION: The AW T919D is a highly integrated GaAs monolithic Power Amplifier suited for both 824 - 849 MHz AMPS/DAMPS and

BLM31A700SP

Contextual Info: E m m c s AWT920 TX POWER MMIC * Advanced Product Information Your GaAs IC Source Rev 0 900/1900 MHz Dual Band AMPS /PCS GaAs Power Amplifier IC DESCRIPTION: VD1_A VD2_A The AWT920 is a highly integrated GaAs monolithic Power Amplifier suited tor both AMPS 824 - 849

Contextual Info: JUAK Coming Attractions M a n A M P ic om pany Low-Cost Three-Way Power Splitter/Combiner 824 - 960 MHz DS53-0001 V1.00 SO-8 Features • Small Size an d Low Profile t 2284-.2440 1497-.1574 5.80-6.20 (3.80-4.00) 101.010(0.25) (EDIB (EDI • Industry Standard SO IC -8 SMT Plastic P ack ag e

AC141-00

Contextual Info: WIRELESS - Power Amplifier AWT920 TX POWER MMIC Advanced Product Information Rev 0 900/1900 MHz Dual Band A M P S /P C S GaAs Power Amplifier IC DESCRIPTION: The AWT920 is a highly integrated GaAs monolithic Power Amplifier suited for both AMPS 824 - 849

Contextual Info: Preliminary Specifications M an A M P com pany Low-Cost Three-Way Power Splitter/Combiner 824 - 960 MHz DS53-0001 SO-8 Features • Sm all Size and Low P rofile PIN! • Ind ustry Stand ard SO IC -8 SM T Plastic P ack ag e .2284-.2440 .1497-.1574 5.80-6.20

Contextual Info: JUAK Preliminary Specifications M a n A M P ic om pany Low-Cost Three-Way Power Splitter/Combiner 824 - 960 MHz DS53-0001 V2.00 SO-8 Features • Sm a l l S iz e a n d Low P i o f i l e • I n d u s t r y S t a n d a id SO E - 8 SM T P la s t ic P a c k a g e

Diplexer GSM

Abstract: Diplexer
Contextual Info: tlfCO Electronics Low Cost SMT Dual Band Diplexer, 824 - 960/1850 - 1990 MHz AMPS/PCS , 880 - 960/1700 - 1900 MHz (GSM/DCS) SO-8 Features • • • • • • • • DP52-0002 V2 Sm all Size and Low Profile Ind ustry Stand ard SO IC -8 S M T Plastic Package

Contextual Info: Photocouplers LTV-814 824 844 M, S, S-TA, S-TA1, S-TP SERIES 1. DESCRIPTION 1.1 Features Current transfer ratio ( CTR : MIN. 20% at IF = +1mA, VCE = 5V ) Response time ( tr : TYP. 4µs at VCE = 2V, IC = 2mA, RL = 100Ω ) AC input response Low collector dark current ( ICEO :MAX.10-7 A at VCE=20V )

GF-623

Abstract: 02102 229R GF-323 g4008 gf 824 GF-1123
Contextual Info: Slide Switch-Standard GF-323 S IN G L E P O LE /SIN G LE THRO W with detent GF-324 S IN G L E PO LE/D O U BLE THRO W (with detent) TYPE E L E C T R IC A L R A T IN G L IS T IN G GF-323 GF-G23 GF-823 GF-1123 GF-1323 GF-1623 GF-324 GF-624 GF-824 GF-1124 GF-1324

ST 80500

Contextual Info: M a n A M P com pany Low Cost Two-Way SMT Power Divider 824 - 960 MHz DS52-0001 V 2 .0 0 Features SO-8 S m a ll Size a n d Low P r o file .2284-.2440 In d u s tr y S t a n d a r d SO E - 8 SM T P la s t ic P a c k a g e .1 4 9 7 - .1 5 7 4 Excellent Am plitu de and P h aæ Balance

LTV-814S-TP

Abstract: ltv844 814 8 pin ic
Contextual Info: L IT E - O N T E CH NO L O G Y CO RP O RAT IO N Property of LITE-ON Only FEATURES * AC input response * High input-output isolation voltage Viso = 5,000Vrms Jan 2011 * Low collector dark current ( ICEO : MAX. 10-7A at VCE = 20V ) * Current transfer ratio

TF5S03ZZ

Contextual Info: S E R IE S M R Wide Input-Low Profile.300 MILITARY DC-DC CONVERTERS • Diodes JAN TX • Transformers Manufactured to MIL-T-27 TF5S03ZZ • Capacitors MIL-C 5536514 MIL-C39003/03 MIL-C 20/27E MIL-C 39014/05 MIL-R-22097 • Resistors MIL-R-39017 • 1C Hermetically Sealed

Contextual Info: NewHoOVDC SERIES LR Isolated Regulated up to 5 Watt DC-DC Converters Wide Input Range/up to 3.33:1 Fully Regulated r - j£ s S T All Units Shielded " FEA TU R ES: • Voltage regulation over input of LRE LRF LRA LRB LR C • Encapsulated semiconductors, conservatively

12PIN

Abstract: CXG1189UR
Contextual Info: High Power SPDT Switch CXG1189UR Description The CXG1189UR is a high power SPDT Single Pole Dual Throw switch MMIC used in wireless communication systems, for example, GSM handsets, GSM/UMTS dual mode handsets. The Sony JPHEMT process is used for low insertion loss.

Contextual Info: SERIES MR Wide In p u t-L o w P ro file.300 MILITARY DC-DC CONVERTERS • Diodes JAN TX • T ran sfo rm ers M an u factu red to M IL -T -27 T F5S 03ZZ • Capacitors MIL-C 5536514 M IL-C39003103 MIL-C 20/27E MIL-C 39014/05 MIL-R-22097 • Resistors MIL-R-39017

Contextual Info: High Power SPDT Switch CXG1189AXR Description The CXG1189AXR is a high power SPDT Single Pole Doble Throw switch MMIC used in wireless communication systems, for example, GSM handsets, GSM/UMTS dual mode handsets. The Sony JPHEMT process is used for low insertion loss.

50ht2

Abstract: BL01RN1-A62 vapc PF1010A Hitachi DSA0064
Contextual Info: PF1010A MOS FET Power Amplifier Module for P/C LAN ADE-208-106A Z 2nd. Edition July 1996 Features • • • • Frequency range: 806 to 824 MHz Surface mounted small package: 1 cc, 3g with shielded cover Low voltage operation: 6 V Low power control current: 300 µA Typ

Hitachi DSA002719

Contextual Info: PF0231A MOS FET Power Amplifier Module for ADC Handy Phone ADE-208-378A Z 2nd Edition July 1996 Application For ADC class3 824 to 849 MHz Features • Low voltage operation 4.8 V • High efficiency: 42% Typ for CW 34% Typ for π/4-DQPSK • Simple Pout control: Controllable by VAPC

S824

Abstract: z66d
Contextual Info: S N 54A S 823, SN 54A S 824 SN 74A S 823, SN 74A S 824 9 BIT BUS INTERFACE FLIP FLOPS W ITH 3 STATE OUTPUTS D 2 8 2 5 , JU N E 1 9 8 4 -R E V IS E D J A N U A R Y 1 9 8 6 Functionally Equivalent to A M D 's A M 2 9 8 2 3 and A M 2 9 8 2 4 S N 54A S 823 . . . JT PACKAGE

Contextual Info: ANALOG DEVICES FEATURES Single-Supply Operation: 3 to 30 Volts Very Low Input Bias Current: 2 pA Wide Input Voltage Range Rail-to-Rail Output Swing Low Supply Current: 500 |aA/Amp Wide Bandwidth: 2 MHz Slew Rate: 2 V / jas No Phase Reversal APPLICATIONS Photo Diode Preamplifier

vapc

Abstract: BL01RN1-A62 PF0231A ADE-208-378A Hitachi DSA0046
Contextual Info: PF0231A MOS FET Power Amplifier Module for ADC Handy Phone ADE-208-378A Z 2nd Edition July 1996 Application For ADC class3 824 to 849 MHz Features • Low voltage operation 4.8 V • High efficiency: 42% Typ for CW 34% Typ for π/4-DQPSK • Simple Pout control: Controllable by VAPC

IRF48

Abstract: IRF100S IRE5D IRF100 IRF12S PICO Electronics IRA series IRA9S IRF28D IRE48S IRE15S
Contextual Info: PICO E L E C T R O N I C S INC s 3E j> 7 im i3 0 O O O O flfl? S ER IES IR Isolated Regulated up to 10 Watt DC-DC Converters Wide Input Range/up to 3.33:1 Fully Regulated All Units Shielded F EATU RES: nutput • Voltage regulation over input of LO W IIR E

GSM900RX

Contextual Info: 3P9T Antenna Switch Module for GSM/CDMA Dual Mode Handsets CXM3542ER Description The CXM3542ER is 3P9T anntena switch module for quad bands GSM and triple bands CDMA dual mode. This IC has a decoder circuit which supports CMOS control. Sony JPHEMT GaAs process is utilized for low insertion loss and high linearity.

850Rx

Abstract: CXM3542ER GSM1800 GSM1900 GSM900 CXM3542
Contextual Info: 3P9T Antenna Switch for GSM/CDMA Dual Mode Phones CXM3542ER Description The CXM3542ER is 3P9T anntena switch for quad bands GSM and triple bands CDMA dual mode. This IC has a decoder circuit which supports CMOS control. Sony JPHEMT GaAs process is utilized for low insertion loss and high linearity.