IC FET 547 Search Results

fet 547

Abstract: MA644 FA01219A 90 HYBRID 70 mhz rf power acp 100k
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC DESCRIPTION Unit:mm FA01219A is RF Hybrid IC designed for 0.8GHz band small size handheld radio. GND FEATURES • Low voltage 3.5V • High gain 22.5B • High efficiency 50% • High power 30.5dBm

9085 d

Abstract: ic fet 547 fet 547 MA644 9415
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC DESCRIPTION small size handheld radio. FEATURES • Low voltage 3.5V • High gain 22.5B • High efficiency 50% • High power 30.5dBm APPLICATION PDC 0.8G Hz ABSOLUTE MAXIMUM RATINGS Tc Ratings

Contextual Info: LOW Ron DUAL FET AN ALO G GATE SPST CAG45A • ± 10V SIGNAL LEVELS AC OR DC 0.100 MIN. 0.020 M IN ~ | 0.023 0.015 • W O R K S D I R E C T L Y F R O M L O G IC • B R E A K BEFORE M A K E A C T IO N L O G IC 6 > - L O G IC G N D (5 - - ( 9 ) LO GIC LO G IC GN D

CD 294

Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package

Contextual Info: LOW COST FET ANALOG GATE SPST +VL • M A X . Ro D IR EC T LY HIGH I r\n m FRO M m h ic c LO G IC N O ISE B R E A K B E F O R E ± 10V S I G N A L V CC TO—100 D 60 O H M W O RK S u ir^ u 00 LO G IC V|N iiv/ia/ii i m i t v ' IM M U N IT Y M A K E O utput

Contextual Info: DUAL FET SWITCHES FOR ANALOG GATING D TO A CONVERSION • INTEGRATOR RESET TO-99 • ZERO O FFSET VO LTAGE • WORKS D IREC TLY FROM LOGIC • LOW POWER CONSUMPTION Typically 5mW per switch p h y s ic a l d im e n s io n s IN ACCORDANCE W ITH JEDEC TO S OUTLINE

Contextual Info: GENERAL PURPOSE FET ANALOG GATE QUAD SPST • • • • • CAG 5 0 D CAG 5 0 T 6 0 O H M M A X . Ron W O R K S D I R E C T L Y F R O M LOG IC H IG H LO G IC NO ISE I M M U N I T Y BREAK BEFORE M A K E AC TIO N ± 10V S I G N A L L E V E L S AC OR DC M A X I M U M R A T IN G S

motorola mt*n06e

Contextual Info: MOTOROLA SC XSTRS/R F SbE D b3ti7254 GDTGTlü 1 Order this data sheet by IRFZ44/D MOTOROLA l'T 73cM 3 S E M IC O N D U C T O R TECHNICAL DATA IR F Z 4 4 P o w e r F ie ld E f f e c t T r a n s i s t o r N-Channel Enhancement-Mode Silicon Gate TM OS This T M O S Pow er FET is designed for high voltage,

Crystalonics CH

Contextual Info: 4 CHANNEL FET MULTIPLEXER C A M 604A C A M 606A V E R Y LOW Ron • 4 ISOLATED REFERENCES • B R E A K BEFORE M A K E A C T IO N • W O R K S D I R E C T L Y F R O M L O G IC • 10 O H M M A X . Ron • ± 10V A C OR DC S I G N A L S Logic ''1 " closes contacts

IFRZ44

Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
Contextual Info: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541

Hitachi 2SJ

Contextual Info: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching HITACHI ADE-208-547 Target specification 1st. Edition Features • Low on-resistance • Low drive current. • 4V gate drive devices. • High speed switching. R d s („ „ ) = 0.017Q typ.

MGF1907

Abstract: MGF1907A mgf1302 MGF1302 equivalent
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1907A TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1907A is a low noise GaAs FET with an N-channel Schottky gate,which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

bq208x

Abstract: i2c protocol based real time clock control applic bq293 BQ29311PW
Contextual Info: bq29311 www.ti.com SLUS487D − DECEMBER 2001 − REVISED NOVEMBER 2003 THREEĆ AND FOURĆCELL LITHIUMĆION OR LITHIUMĆPOLYMER BATTERY PROTECTION IC FEATURES D 3- or 4-Cell Series Protection Control D Autonomous Overcurrent and Short Circuit Protection D Provides Individual Cell Voltages to Battery

Contextual Info: Ordering number: EN 5471 Monolithic Linear IC LA7191N Global VHS-format VCR Video Signal Processor Overview Package Dimensions unit: mm The LA7191N is a multi-format, single-chip video signal processing IC that supports TV systems around the world. 3025B-DIP42S

OSD ic

Abstract: VR39
Contextual Info: Ordering number: EN 5471 Monolithic Linear IC LA7191N Global VHS-format VCR Video Signal Processor Overview Package Dimensions unit: mm The LA7191N is a multi-format, single-chip video signal processing IC that supports TV systems around the world. 3025B-DIP42S

VR39

Abstract: DIP42S LA7191N
Contextual Info: Ordering number: EN 5471 Monolithic Linear IC LA7191N Global VHS-format VCR Video Signal Processor Overview Package Dimensions unit: mm The LA7191N is a multi-format, single-chip video signal processing IC that supports TV systems around the world. 3025B-DIP42S

Contextual Info: FSA9480 — USB 2.0 Accessory Switch Features Description ƒ The FSA9480 is a USB port accessory detector and 2 switch. The FSA9480 is fully controlled using I C and enables USB data, stereo and mono audio, video, microphone, and UART data to use a common

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: DYNAMIC SATURATION VOLTAGE — A DESIGNER’S COMPARISON By W arren Schultz Motorola Inc. Semiconductor Products Division Reprinted by Permission of POWERCONVERSION INTERNATIONAL, October 1983 Issue, Volume 9, Number 9. 1983 Intertec Communications Inc.

Hitachi DSA00280

Abstract: capasitor 1.2 mf diode td3
Contextual Info: HA16163T Synchronous Phase Shift Full-Bridge Control IC ADE-204-073 Z Preliminary Rev.0 Aug. 2002 Features • High frequency operation; oscillator frequency = 2 MHz max. • Full-bridge phase-shift switching circuit with adjustable delay times • Integrated secondary synchronous rectification control with adjustable delay times

e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Contextual Info: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that