IC K 902 DATA SHEET Search Results

T902 transformer

Abstract: TRANSFORMER T902
Contextual Info: DATA SHEET "• V y • - 7 - : > w - . •. - r4 . \ a p r il , 1996 LXT902 Ethernet Twisted-Pair Media Attachment Unit T he LX T902 tw isted-pair M edia A ttachm ent U n it TPM A U is designed to allow E thernet connections to use the existing tw isted-pair w iring plant through an E thernet A t­

zenamic

Abstract: zenamic Z 330 zenamic 220 Oneida Electronic MFG 2SA50A 0Z7L101 0Z7L220 0Z7L330 0Z7L560 0Z7L680
Contextual Info: ONEIDA ELECTRONIC MFfi I NC 6792335 Sfl ONEIDA ELECTRON IC dËT| ^,7 ^ 3 3 5 MFG INC 58C 0030Ô D 0 D D 3 DD T - / / - ¿ S ’ #4 Data Sheet No. a - io i nelda F 1 Ie # E 7 l2 2 ° Z e n a m ia * Z-MOV Transient Voltage Suppressors Z7, ZIO, ZI5.Z2I.&Z33 SERIES

zenamic 220

Abstract: zenamic 910-820 zenamic Z 330 Oneida Electronic MFG Transient Voltage Suppressors 340 V 0Z7L101 0Z7L121 0Z7L220 0Z7L270
Contextual Info: ONEIDA ELECTRONIC MFfi INC 6792335 Sfl ONEI DA ELECTRONI C d ËT| ^,7^335 D0DD3DD 7 f MFG INC 58C 0 0 3 0 Ô T - / / - ¿ S #4 Data Sheet No. a - i o i nelda F 1 Ie # E 7 l2 2 ° Z e n a m ia * Z-MOV Transient Voltage Suppressors Z7, ZIO, ZI5.Z2I.&Z33 SERIES

12047835

Abstract: 8911292 M3520 1204074 2989621 120109 12059450 02973626 17SE01
Contextual Info: 16 15 14 13 12 11 10 8 SYMBOL D E F I N I T I O N A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. M DWG STATUS ZONE DATE STG REV N/P CHG MISSING SYMBOLS TOTAL NO OF

TIP3055T

Contextual Info: D E V E L O P M E N T DATA TIP3055T T S ? -!' T his data sheet contains advance inform ation and specifications are subject to change w ithout notice. SbE D PHILIPS INTERNATIONAL 711GflEb DGM3t.m 174 PHIN SILICON EPITAXIAL-BASE POWER TRANSISTOR N-P-N transistor in a plastic envelope. With its p-n-p complement T IP2955T they are primarily intended

TIP3055T

Abstract: TIP2955T IEC134 TIP2955 transistor x 313
Contextual Info: DEVELO PM ENT DATA This data sheet contains advance in fo rm a tio n and TIP3055T specifications are subject to change w ith o u t notice. 7 - 3 3-13 PHILIPS SbE INTERNATIONAL D 7110fl2b G G M B b m 174 IPHIN SILICON EPITAXIAL-BASE POWER TRANSISTOR N-P-N transistor in a plastic envelope. W ith its p-n-p complement T IP 2 9 5 5 T they are prim arily intended

Contextual Info: GEIMNUM _ qm C O R P O R A T I GENLINX I I G S 9 0 2 5 Serial Digital Receiver OI M PRELIMINARY DATA SHEET S TA N DA RD FEATURES D ES C R IPTIO N fully com patible with SMPTE 259M and operational to 540 Mb/s autom atic cable equalization typically greater than

Contextual Info: D E V E L O P M E N T DATA TIP3055T This data sheet contains advance information and specifications are subject to change without notice. SILICON EPITAXIAL-BASE POWER TRANSISTOR N-P-N transistor in a plastic envelope. With its p-n-p complement TIP295ST they are primarily intended

Contextual Info: GENNUM G □ R P Q R A T I □ GENLINX II GS9035 Serial Digital Reclocker N PRELIMINARY DATA SHEET STANDARD FEATURES DEVICE DESCRIPTION • • adjustment-free operation auto-rate selection for 5 SMPTE data rates: The GS9035 is a high perform ance clock and data recovery

ADS902

Contextual Info: B U R R - BRO W N C [ ADS902 ] 10-Bit, 30MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • • • • The A D S 902 is a high speed pipelined analog-todigital converter that is specified to operate from a single + 5 V supply. This converter includes a wide

marking C1s

Abstract: PC2747 SUPER CAPACITOR BASED CIRCUIT MPC2747TB-E3
Contextual Info: PRELIMINARY DATA SHEET_ M F f ~ / BIPOLAR ANALOG INTEGRATED CIRCUITS / //PC2747TB, /¿PC2748TB 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The /iPC2747TB, /¿PC2748TB are silicon monolithic integrated circuits designed as amplifier, for mobile

TIP3055T

Abstract: USA060-1 transistor 8771 transistor 902
Contextual Info: DEVELOPMENT DATA TIP3055T T h is data sheet contains advance inform ation and «peclfleationi are subject to change w ithout notice. SILICON EPITAXIAL-BASE POWER TRANSISTOR N-P-N transistor in a plastic envelope. W ith its p-n-p complement T IP 2 9 5 S T they are prim arily intended

aui rj45

Abstract: LXT902PC
Contextual Info: DATA SHEET APRIL, 1996 LXT902 Ethernet Twisted-Pair Media Attachment Unit The LXT902 twisted-pair Media Attachment Unit TPM A U is designed to allow Ethernet connections to use the existing twisted-pair wiring plant through an Ethernet A t­ tachment Unit Interface (A U I). The LXT902 provides the

DFT301-801X7R102S50

Abstract: DFT301-801X7R S21-Frequency DFT301801X7R GRM39 GRM40 marking C8 amplifier ghz transmitter receiver 35369
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8204TK VARIABLE GAIN AMPLIFIER FOR TRANSMITTER AGC DESCRIPTION The µPC8204TK is a silicon monolithic integrated circuit designed as variable gain amplifier. The package is 6-pin lead-less minimold suitable for surface mount.

Contextual Info: 34S SERIES DATA SHEET METAL OXIDE VARISTOR – 34S SERIES FEATURE — — — — — Wide operating voltage V1mA range from 33V to 1600V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no follow-on current.

Contextual Info: 53ĭ SERIES DATA SHEET METAL OXIDE VARISTOR – 53ĭ SERIES FEATURE — — — — — Wide operating voltage V1mA range from 33V to 1600V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no follow-on current.

Contextual Info: 34S SERIES DATA SHEET ZINC OXIDE VARISTOR – 34 S SERIES FEATURE — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.

Contextual Info: 32ĭ SERIES DATA SHEET METAL OXIDE VARISTOR – 32ĭ SERIES FEATURE — — — — Wide operating voltage V1mA range from 33V to 1600V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no follow-on current.

Contextual Info: 32Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 32 Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.

Contextual Info: 32Φ SERIES DATA SHEET METAL OXIDE VARISTOR – 32Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 33V to 1600V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no follow-on current.

Contextual Info: 32Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 32 Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.

Contextual Info: 53Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 53 Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.

Contextual Info: 40ĭ SERIES DATA SHEET METAL OXIDE VARISTOR – 40ĭ SERIES FEATURE — — — — Wide operating voltage V1mA range from 33V to 1600V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no follow-on current.

Contextual Info: 40Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 40 Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.