IC KSS 344 Search Results
IC KSS 344 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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D1U74T-W-1600-12-HB4AC | Murata Manufacturing Co Ltd | AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs |
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D1U54T-M-2500-12-HB4C | Murata Manufacturing Co Ltd | 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR |
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MRMS591P | Murata Manufacturing Co Ltd | Magnetic Sensor |
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SCR410T-K03-PCB | Murata Manufacturing Co Ltd | 1-Axis Gyro Sensor on Evaluation Board |
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MRMS581P | Murata Manufacturing Co Ltd | Magnetic Sensor |
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IC KSS 344 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SIEMENS SIPMOS Power Transistor N channel Enhancem ent mode Avalanche-rated Type BUZ 344 fl • • • ¡D 100 V n 50 A ^ DS (on 0.035 SI Maxim um Ratings Param eter Continuous drain current, Tc = 25 "C Pulsed drain current, Tc = 25 ’C Avalanche current, lim ited by 7] max |
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C67078-S3132-A2 | |
Contextual Info: High P erform ance 1MX4 CMOS DRAM H A S4C14405 Il IM X 4 C M 0 S EDO DRAM Preliminary information Features • 1024 refresh cydes, 16 ms refresh interva • Organization: 1,048,576 words x 4 bit • High speed - RAS-only o r CAi>-before-RAS refresh • Read-modify-write |
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S4C14405 26/20-pin AS4C14405-60JC 26/20-pin 0Q34HC | |
Contextual Info: S-2919CR/I C M O S 1 K -b it s e ria l E 2P R O M E a s y in te rfa c e w ith s e r ia l port W ith m e m o r y p ro te ctio n T h e S -2 9 1 9 C R /I is a high speed , low pow er 1 K-bit E2P R O M that uses the C M O S floating-gate process. T h e organization is 64-w ord x 16-bit, and it is read or |
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S-2919CR/I 16-bit, 0002G10 fllE3443 | |
D071521
Abstract: d0715 Q67100-Q1104 Q67100-Q1105 Q67100-Q1106
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5117805BSJ A235bOS 5117805BSJ-50/-60/-70 I/01-I/08 fiE35bDS 0G71532 D071521 d0715 Q67100-Q1104 Q67100-Q1105 Q67100-Q1106 | |
HM50465Contextual Info: HM50465 Series 65536-word x 4-bit Dynamic Random Access Memory • • • • • • • • • • FEATURES Nibble mode capability Single 5V ±10% On chip substrate bias generator Low power; 350 mW active, 20 mW standby High Speed: Access time 120 ns/150 ns/200 ns (max.) |
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HM50465 65536-word ns/150 ns/200 DP-18B) 50465P-12 50465P-15 50465P-20 120ns 150ns | |
501B 8 PContextual Info: S-2929CR/I C M O S 2 K - b it se ria l E 2P R O M E a s y in te rfa c e with s e r ia l port W ith m e m o r y p ro te ctio n T h e S -2 9 2 9 C R /I is a high s p e e d , low p o w e r 2 K -b it E 2 P R 0 M th a t u s e s th e C M O S flo a tin g -g a te p ro c e s s . |
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S-2929CR/I 000210b 00D2107 501B 8 P | |
as4c256k16eo
Abstract: 256KX16 AS4C256K16E0 LO301
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AS4C256K16E0 256KX16 4C256K16E0-45) 40-pin I/015 I/014 as4c256k16eo LO301 | |
Contextual Info: SIEM ENS 2M X 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode - EDO HYB 5117805BSJ -50/-60/-70 Prelim inary Inform ation • • • 2 097 152 w ords by 8-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) |
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5117805BSJ 5117805BSJ-50/-60/-70 23SbDS DG71532 | |
TCXO KSS 19.2MHz
Abstract: MAX2150egi MAX4444 VC-TCXO-208C GRM216R71H103K HHM1516 TDS3012 VC-TCXO-208C3-19 MAX2150 208C3
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MAX2390/MAX2400, MAX2391/MAX2392/ MAX2393, MAX2396 MAX2390 MAX2393/MAX2396/MAX2400 MAX2390 MAX2391/MAX2392/MAX2393, MAX2396, MAX2390/MAX2400. TCXO KSS 19.2MHz MAX2150egi MAX4444 VC-TCXO-208C GRM216R71H103K HHM1516 TDS3012 VC-TCXO-208C3-19 MAX2150 208C3 | |
SDA5343
Abstract: SDA5231 DD1002 D-A53
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SDA5343 SDA5343 SDA5231 DD1002 D-A53 | |
Contextual Info: SIEM EN S Clock Sync Generator SDA 9257 Preliminary Data MOS 1C Features • All settings made by I2C bus • PLL lock-in behavior can be set to TV or VCR mode • Automatic clamping of CVBS input • Provides all horizontal and vertical sync signals and clocks for operating PAMUX, analog color |
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24-MHz 27-MHz | |
AS4C256K16E0-45JCContextual Info: H ig h P e r fo r m a n c e 256K X 16 CM OS DRAM A S4C 256K 16E 0 A 2 5 6 K X 1 6 CM O S EDO DRAM Preliminary information Features • O r g a n iz a tio n : 2 6 2 , 1 4 4 w o r d s x 16 b its • E x te n d e d d a ta o u t • H ig h s p e e d • 5 1 2 r e f r e s h c y c le s , 8 m s r e f r e s h in te r v a l |
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GPR circuit schematic diagram full
Abstract: SIEMENS 3 TB 40 17 - 0B Siemens Halbleiter Siemens HE 8011 siemens b 58 468 la intel 80 Siemens SAB-C501
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16-Bit Ausgabe10 MarketingKommu7-49 GPR circuit schematic diagram full SIEMENS 3 TB 40 17 - 0B Siemens Halbleiter Siemens HE 8011 siemens b 58 468 la intel 80 Siemens SAB-C501 | |
Contextual Info: SIEM ENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517/80C537 Advanced Information SAB 80C517 SAB 80C537 Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • Versions for 12 MHz and 16 MHz operating frequency |
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80C517/80C537 80C517 80C537 80C517 80C51 16-bit 235bG5 12Qflà 8E100X | |
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a70 8 pin icContextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / juPD42S16405L, 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE EDO D e s c rip tio n The jiPD42S16405L, 4216406L are 4,194,304wocds by 4 bits CMOS dynamic HAM w ith option«! hyperpage mode |
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uPD42S16405L uPD4216405L jiPD42S16405L, 4216406L 304wocds /IPD42S16405L 1PD42S16405L, 421S405L 26-pin a70 8 pin ic | |
kss exo 3 0h
Abstract: SAB-C501-L20P Siemens SAB-C501 MCS01 80C52 SAB-C501 SAB-C501-LN SAB-C501-LP SAF-C501 C-501
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SAB-C501 SAB-C501-1R 16-bit P-DIP-40 P-LCC-44 SAF-C501 SAB-C501 SAB-C501-L/C501 kss exo 3 0h SAB-C501-L20P Siemens SAB-C501 MCS01 80C52 SAB-C501-LN SAB-C501-LP C-501 | |
C502Contextual Info: SIEMENS 8-Bit CMOS Microcontroller C502 Preliminary • Fully compatible to standard 8051 microcontroller • Versions for 12 / 20 MHz operating frequency • 16 K x 8 ROM SAB-C502-2R only • 256 x 8 RAM • 256 x 8 XRAM (additional on-chip RAM) • Eight datapointers for indirect addressing of program and external data memory |
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SAB-C502-2R 10-bit 15-bit P-DIP-40 P-LCC-44 MCS01784 C502 | |
Contextual Info: ePS6900 RISC II Series Microcontroller Product Specification DOC. VERSION 1.0 ELAN MICROELECTRONICS CORP. November 2010 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation. |
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ePS6900 | |
7812 3 Pin 3A Fixed 12V Positive Voltage Regulator
Abstract: ACC 2036 REGULATOR IC 7824 OSCILLATOR 32.768K resistor 32.768k CRYSTAL mcu bs 7818 AR0001
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ePS6800 7812 3 Pin 3A Fixed 12V Positive Voltage Regulator ACC 2036 REGULATOR IC 7824 OSCILLATOR 32.768K resistor 32.768k CRYSTAL mcu bs 7818 AR0001 | |
cmo tcon
Abstract: SAB-80C517-16-N-T40/85 B158-H6497-X-X-7600 marking 80c515 Q67120-C452 80C517 80C537-16 a to d converter interface with 8051 Changing from the 80C537 siemens cpu 317
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80C517/80C537 80C517 80C537 256x8 80C51 16-bit 32-bi WCA00606 cmo tcon SAB-80C517-16-N-T40/85 B158-H6497-X-X-7600 marking 80c515 Q67120-C452 80C537-16 a to d converter interface with 8051 Changing from the 80C537 siemens cpu 317 | |
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 4-BIT SINGLE-CHIP MICROCONTROLLER WITH HARDWARE FOR DIGITAL TUNING SYSTEM DESCRIPTION The nP D 17012 is a 4-bit single-chip CMOS m icrocontroller containing hardware ideal for organizing a digital tuning system . The CPU em ploys 17K architecture and can m anipulate the data mem ory directly, perform arithm etic operations, |
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16-bit | |
NEC 1093
Abstract: isp macro lib D17010
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uPD17010 16-bit S7B10AS17010 S7B13AS17010 uS5A10IE17K uS5A13IE17K uS7B10IE17K uS7B13IE17K PC-9800 NEC 1093 isp macro lib D17010 | |
BFT65
Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
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JD 1803
Abstract: philips diode PH 33D Schematics bosch AL 1450 DV bosch al 1450 dv JD 1803 52B jd 1803 IC jd 1803 data sheet quartz kds 9j shockley diode application Yokogawa yf 104
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