SN1000
Abstract: negative temperature coefficient devices 1n4148 1n4148 zener diode zener 1n4148 LM199 1n4148 die GR01 ZENER 1N4148 Datasheet Zener 35v dip 1N4148
Text: LTZ1000/LTZ1000A Ultra Precision Reference U FEATURES • ■ ■ ■ ■ DESCRIPTIO 1.2µVP-P Noise 2µV/√kHr Long Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized The LTZ1000 and LTZ1000A are ultra stable temperature controllable references. They are designed to provide 7V
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LTZ1000/LTZ1000A
05ppm/
LTZ1000
LTZ1000A
LT1236
sn1000
1000afas
negative temperature coefficient devices 1n4148
1n4148 zener diode
zener 1n4148
LM199
1n4148 die
GR01
ZENER 1N4148 Datasheet
Zener 35v dip
1N4148
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LM199
Abstract: LTZ1000 1n4148 die chip 1n4148 die Thermocouple 2N3904 ZENER 1N4148 Datasheet 1N4148 LTZ1000A LTZ1000ACH LTZ1000CH
Text: LTZ1000/LTZ1000A Ultra Precision Reference U FEATURES • ■ ■ ■ ■ DESCRIPTIO 1.2µVP-P Noise 2µV/√kHr Long Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized The LTZ1000 and LTZ1000A are ultra stable temperature controllable references. They are designed to provide 7V
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LTZ1000/LTZ1000A
05ppm/
LTZ1000
LTZ1000A
LT1236
1000afa
LM199
1n4148 die chip
1n4148 die
Thermocouple 2N3904
ZENER 1N4148 Datasheet
1N4148
LTZ1000ACH
LTZ1000CH
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LT 0206
Abstract: 1N4148 tempco 1N414* zener 2N3904 die marking h8 LM199
Text: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES DESCRIPTION • The LTZ 1000 and LTZ1000A are ultra stable temperature controllable references. They are designed to provide 7V outputs with temperature drifts of 0.05ppm/°C, about 1.2µVP-P of noise and long term stability of 2µV/√k⎯ ⎯H⎯r.
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LTZ1000/LTZ1000A
LTZ1000A
05ppm/
LTZ1000
LM199,
LM399
LT1021
LT1236
LT1389
LT 0206
1N4148 tempco
1N414* zener
2N3904 die
marking h8
LM199
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1N4148 tempco
Abstract: ZENER 1N4148 1N414* zener Thermocouple 2N3904 LTZ1000 LM199 lt1021 Zener noise LTZ1000A LTZ1000ACH
Text: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.2µVP-P Noise 2µV/√kHr Long Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized 400°C/W Thermal Resistance for LTZ1000A reduces insulation requirements
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LTZ1000/LTZ1000A
05ppm/
LTZ1000A
LM399
LT1021
LT1236
LT1389
800nA,
1N4148 tempco
ZENER 1N4148
1N414* zener
Thermocouple 2N3904
LTZ1000
LM199
lt1021
Zener noise
LTZ1000ACH
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Untitled
Abstract: No abstract text available
Text: S P E C 1 F 1 CAT 1 ON D EVICE NAME : S IL IC O N DIODE TYPF NAME : E RW O SPEC. : No. 1 - 0 6 0 DATE F u j i E l e c t r i c Co., Ltd. This Specification is subject to change without notice. DATE NAME APPROVED "S' 1 Q Fuji Electric Coglici o CHECKED zc 1
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GGDST47
O-22DAC
20kHz
Duty50X
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L00A
Abstract: ic l00a si6954
Text: Tem ic SÌ6954DQ S e m i c o n d u c t o r s Dual N-Channel 30-V D-S Rated MOSFET Product Summary V u s(V ) rDS(on) (Q ) I d (A ) 0.065 @ VGS= 10 V ± 3 .9 0.095 @ VGS = 4.5 V ± 3.1 30 T SSO P-8 ;<JE Ô Si Ô s. N -Channel M O SFET N-Channel M OSFET T S S O P -8
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6954DQ
20stics
S-49534--
ct-97
06-Oct-97
L00A
ic l00a
si6954
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SP-23TA
Abstract: HA13403 HA13403MP HA13403V MP28 MP-28
Text: H A 1 3 4 0 3 /V /M P T h re e -p h a s e Brushless M otor D river HA13403Ü, 3 fà - fÿ ÿ i^ x D C y' ÿy IC T~to <r> F 7 t L T ffifl L ^ HA13403 í f l f f t l . 5 A / f f l 26V T"í> 9 ,VTR • 4$ ë • <, t B Ä t S W W E E A M 'S v ^ iz ^ ^ rao , •m w s r
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HA13403/V/MP
HA13403Ã
HA13403
HA13403/V
HA13403MP
SP-23TA)
SP-23TA
SP-23
MP-28)
HA13403
HA13403MP
HA13403V
MP28
MP-28
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MG75H6EL1
Abstract: No abstract text available
Text: MG75H6EL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH P O WER S W I T C H I N G APPLICATIONS. M O T O R C O N T R O L APPL ICATIONS. . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diode.
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MG75H6EL1
Tc-25`
MG75H6EL1
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MAX2400
Abstract: No abstract text available
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100Q2YK1 HIGH POWER SWITCHING APPLICATIONS, MOTOR CONTROL APPLICATIONS. Unit in ram FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package.
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MG100Q2YK1
MAX2400
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DI SC RE TE /OPT O} * • dF 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR I t o ^tssd 90D 16129 auibiai D t 7"-33~/3 TOSHIBA GTR MODULE MG50H1BS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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MG50H1BS1
50HIBS1-A
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Untitled
Abstract: No abstract text available
Text: S P E C I F I C A T I ON • 25367^2 000437=1 TTT ■ Ratings and characteristics of Fuji IGBT 1 M B H 1 OD — 1 2 0 2- Equivalent circuit 1. Outline Drawing C:Collector G:Gate o- FWD C O N N E C T IO N ■ i GATE © CO LLECTO R i Q EM ITTER 3. Absolute maximum ratings
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MS5F3688
H04-004-03
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m210 g
Abstract: J3E diode
Text: 2DI100Z-100 iooa : Outline Drawings POWER TRAN SISTO R MODULE ÌR 25 F e a tu re s • S W JÏ High Voltage • 7 'J — jfr-f y — KrtflK • A S O A 'J ÏIl' • ÿfeiiïïi Including Free W heeling Diode Excellent Safe Operating Area Insulated Type • Æ liÉ ^ A p p lic a t io n s
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2DI100Z-100
E82988
11S19^
I95t/R89)
m210 g
J3E diode
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MG75H2YS1
Abstract: ic l00a l00a
Text: GTR MODULE SILICON N CHANNEL IG8T MG75H2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm 3-M 5 , 2 3±0.5, 2 3±0.5^ 82 4-FA ST-ON TAB # 1 10 2-<45.6±0.3 • High Input Impedance . High Speed : tf=l.Oys Max. trr=0•5 ys(Max.)
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MG75H2YS1
MG75H2YS1
ic l00a
l00a
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LP2980AIM
Abstract: BDI sot23 SOT-23 bdi L028 LP2980AIMSX-3.3 207827 NATIONAL SEMICONDUCTOR 2n4403 L018 DIIH1053 L01A
Text: National Semiconductor O ctob e r 1994 LP2980 M icro p ow er SOT, 50 mA Ultra Low -D ropout R egulator General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator de signed specifically to m eet th e requirem ents o f battery-pow
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LP2980
LP2980
OT-23
20-3A
VIC3168
LP2980AIM
BDI sot23
SOT-23 bdi
L028
LP2980AIMSX-3.3
207827
NATIONAL SEMICONDUCTOR 2n4403
L018
DIIH1053
L01A
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NJM062
Abstract: ic njm4558 pin diagram
Text: J-FET INPUT OPERATIONAL AMPLIFIER NJM062/064 The NJM062/064 are J-F E T input operational amplifiers which were designed as low-power versions of the NJM082. They feature high input impedance, wide bandwidth, high slew rate, and low input offset and bias current. The NJM062
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NJM062/064
NJM062/064
NJM082.
NJM062
NJM4558/2043/2904/3404/072
NJM064
NJM2902/3403/2058/2059/2060.
ic njm4558 pin diagram
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VIPER100
Abstract: viperl 500 watt smps schematic VIPER100 Application Note VIPER100ASP VIPER100A VIPER100SP VIPER100 300 watt mosfet amplifier Fc-0013 Fc0013 SGS-Thomson
Text: SGS-THOMSON V IP e r 1 0 0 /S P VI P e r l 0 0 A /A S P M IM i[Li gïïlHΩiD(3S SMPS PRIMARY I.C. AD VA N C E DATA TYPE V In dss R D S (o n ) V IP e r l 00/S P 600V 3 A 2.5 V IP e r l 0 0 A /A S P (*) 670V 3 A 3 .3 a a (*) In d e v e lo p m e n t FEATURE
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VIPer100/SP
200KHZ
/100A
PowerSO-10
VIPER100
viperl
500 watt smps schematic
VIPER100 Application Note
VIPER100ASP VIPER100A VIPER100SP VIPER100
300 watt mosfet amplifier
Fc-0013
Fc0013
SGS-Thomson
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tokin 792
Abstract: DIODE marking l01A SIEMENS capacitor tantalum marking L01A
Text: LP2980 & National Semiconductor LP2980 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator d e signed specifically to m eet the requirem ents o f b attery-pow ered applications.
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LP2980
LP2980
OT-23
T0-220
tokin 792
DIODE marking l01A
SIEMENS capacitor tantalum
marking L01A
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Untitled
Abstract: No abstract text available
Text: Thf» materni and the Information htretn It the property of Fuji Electric Co.,ltd. They shall ba neither reproduced, copied» lent, or diietated tn any way whatsoever for the u«e of any third party nor used for the manufacturing purpotai without the «qrait written eaiientof Fi|1 Bectrte Co.,Lld.
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2SK2874-01L
2SK2874-01
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rft katalog
Abstract: transistor vergleichsliste dl 8205 VEB mikroelektronik mikroelektronik RFT "halbleiterwerk frankfurt" DL074D katalog rft TRANSISTOR KATALOG rft mikroelektronik
Text: [fin ] D[k ä rä fs J E I S l n b r 1! Bipolare digitale Schaltkreise Low -Pow er-S chottky-TTL S c h o ttky -T T L -In te rfa c e -S e rie n il- c Bipolare digitale Schaltkreise Low-Power-Schottky-TTL Sch ott ky-TTL-l nterf a ce-Se r ie Vorwort Der vorliegende Katalog ist vor allem für Konstrukteure und Geräteentwickler
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Untitled
Abstract: No abstract text available
Text: A d v a n ced P o w er Te c h n o l o g y O D APT30M45JNR 300V 70A 0.045a APT30M50JNR 300V 65A 0.050Í2 O s ISOTOP* "UL Recognized" Rie No. E145S92 S POWER MOS IVe N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol V DSS All Ratings: Tp = 25°C unless otherwise specified.
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APT30M45JNR
APT30M50JNR
E145S92
APT30M50JNR
OT-227
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SS1001
Abstract: transistor bc 570 GS3A 2sk7884 5a2 DIODE
Text: TOSHIBA {DISCRETE/OPTO} n De I ^ D T T S S O 99D 1674 5 9097250 TOSHIBA <DISCRETE/OPTO DDlb 7 4 S b DT-^-IS TOSHIBA FIELD EFFECT TRANSISTOR TOSHIBA SEMICONDUCTOR 2 S K 7 8 8 SILICON N CHANNEL HOS TYPE 7T-MOSI ) TECHNICAL DATA INDUSTRIAL APPLICATIONS _ Unit in mm
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100nA
300nA
JL59MAX.
ID-15A
EGA-2SK788-4
EGA-2SK788-5
SS1001
transistor bc 570
GS3A
2sk7884
5a2 DIODE
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F1S50N06
Abstract: RFP50N06 N-channel MOSFET to-247 50a 50A60V tc2516 TA49018 1S50N
Text: l i H A R R RFG50N06, RFP50N06, RF1S50N06SM IS r f 1S50N06, s e m i c o n d u c t o r 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC STYLE TO-247 • 50A, 60V • r D S O N = SOURCE 0.022S1 • Temperature Compensating PSPICE Model
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1S50N06,
RFG50N06,
RFP50N06,
RF1S50N06SM
O-247
022S1
RF1S50N06,
RF1S50N06SM
F1S50N06
RFP50N06
N-channel MOSFET to-247 50a
50A60V
tc2516
TA49018
1S50N
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X3700
Abstract: T10601 nec 2401 uPD16631A 1F42 uPD16631 S240 PD16631A muaj
Text: MOS Integrated Circuit / P D 16631A 2 4 0 f f l* T F T - L C D ff lV “ - ^ • 64PgKfcfj£ /¿PD16631AU, 64PgfiflS^WH5COTFT-LCDfflV-^ • K ^ - f/<?•*-<> x - ^ A ^ l * , M X # ) WT-'i/ffrXlJT, 6t'-y h X 6 hMdc (2 5 X 2 ffli0 ^ * a p (C « i:U y t t jE S n t 6 4 t t t t * l- < i:* 2 6 7 3 fe 0 7
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6631A
64PgKfcfj£
uPD16631AU
64PgfiflS
X3700
T10601
nec 2401
uPD16631A
1F42
uPD16631
S240
PD16631A
muaj
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Untitled
Abstract: No abstract text available
Text: Si GEC PLESSEY _PRELIMINARY INFORMATION S E M I C O N D U C T O R S ACE9030 RADIO INTERFACE AND TWIN SYNTHESISER ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor
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ACE9030
ACE9030
37bflS2H
002fcilki7
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