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    IC L00A Search Results

    IC L00A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC L00A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SN1000

    Abstract: negative temperature coefficient devices 1n4148 1n4148 zener diode zener 1n4148 LM199 1n4148 die GR01 ZENER 1N4148 Datasheet Zener 35v dip 1N4148
    Text: LTZ1000/LTZ1000A Ultra Precision Reference U FEATURES • ■ ■ ■ ■ DESCRIPTIO 1.2µVP-P Noise 2µV/√kHr Long Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized The LTZ1000 and LTZ1000A are ultra stable temperature controllable references. They are designed to provide 7V


    Original     		PDF LTZ1000/LTZ1000A 05ppm/ LTZ1000 LTZ1000A LT1236 sn1000 1000afas negative temperature coefficient devices 1n4148 1n4148 zener diode zener 1n4148 LM199 1n4148 die GR01 ZENER 1N4148 Datasheet Zener 35v dip 1N4148

    LM199

    Abstract: LTZ1000 1n4148 die chip 1n4148 die Thermocouple 2N3904 ZENER 1N4148 Datasheet 1N4148 LTZ1000A LTZ1000ACH LTZ1000CH
    Text: LTZ1000/LTZ1000A Ultra Precision Reference U FEATURES • ■ ■ ■ ■ DESCRIPTIO 1.2µVP-P Noise 2µV/√kHr Long Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized The LTZ1000 and LTZ1000A are ultra stable temperature controllable references. They are designed to provide 7V


    Original     		PDF LTZ1000/LTZ1000A 05ppm/ LTZ1000 LTZ1000A LT1236 1000afa LM199 1n4148 die chip 1n4148 die Thermocouple 2N3904 ZENER 1N4148 Datasheet 1N4148 LTZ1000ACH LTZ1000CH

    LT 0206

    Abstract: 1N4148 tempco 1N414* zener 2N3904 die marking h8 LM199
    Text: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES DESCRIPTION • The LTZ 1000 and LTZ1000A are ultra stable temperature controllable references. They are designed to provide 7V outputs with temperature drifts of 0.05ppm/°C, about 1.2µVP-P of noise and long term stability of 2µV/√k⎯ ⎯H⎯r.


    Original     		PDF LTZ1000/LTZ1000A LTZ1000A 05ppm/ LTZ1000 LM199, LM399 LT1021 LT1236 LT1389 LT 0206 1N4148 tempco 1N414* zener 2N3904 die marking h8 LM199

    1N4148 tempco

    Abstract: ZENER 1N4148 1N414* zener Thermocouple 2N3904 LTZ1000 LM199 lt1021 Zener noise LTZ1000A LTZ1000ACH
    Text: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.2µVP-P Noise 2µV/√kHr Long Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized 400°C/W Thermal Resistance for LTZ1000A reduces insulation requirements


    Original     		PDF LTZ1000/LTZ1000A 05ppm/ LTZ1000A LM399 LT1021 LT1236 LT1389 800nA, 1N4148 tempco ZENER 1N4148 1N414* zener Thermocouple 2N3904 LTZ1000 LM199 lt1021 Zener noise LTZ1000ACH

    Untitled

    Abstract: No abstract text available
    Text: S P E C 1 F 1 CAT 1 ON D EVICE NAME : S IL IC O N DIODE TYPF NAME : E RW O SPEC. : No. 1 - 0 6 0 DATE F u j i E l e c t r i c Co., Ltd. This Specification is subject to change without notice. DATE NAME APPROVED "S' 1 Q Fuji Electric Coglici o CHECKED zc 1


    OCR Scan     		PDF GGDST47 O-22DAC 20kHz Duty50X

    L00A

    Abstract: ic l00a si6954
    Text: Tem ic SÌ6954DQ S e m i c o n d u c t o r s Dual N-Channel 30-V D-S Rated MOSFET Product Summary V u s(V ) rDS(on) (Q ) I d (A ) 0.065 @ VGS= 10 V ± 3 .9 0.095 @ VGS = 4.5 V ± 3.1 30 T SSO P-8 ;<JE Ô Si Ô s. N -Channel M O SFET N-Channel M OSFET T S S O P -8


    OCR Scan     		PDF 6954DQ 20stics S-49534-- ct-97 06-Oct-97 L00A ic l00a si6954

    SP-23TA

    Abstract: HA13403 HA13403MP HA13403V MP28 MP-28
    Text: H A 1 3 4 0 3 /V /M P T h re e -p h a s e Brushless M otor D river HA13403Ü, 3 fà - fÿ ÿ i^ x D C y' ÿy IC T~to <r> F 7 t L T ffifl L ^ HA13403 í f l f f t l . 5 A / f f l 26V T"í> 9 ,VTR • 4$ ë • <, t B Ä t S W W E E A M 'S v ^ iz ^ ^ rao , •m w s r


    OCR Scan     		PDF HA13403/V/MP HA13403Ã HA13403 HA13403/V HA13403MP SP-23TA) SP-23TA SP-23 MP-28) HA13403 HA13403MP HA13403V MP28 MP-28

    MG75H6EL1

    Abstract: No abstract text available
    Text: MG75H6EL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH P O WER S W I T C H I N G APPLICATIONS. M O T O R C O N T R O L APPL ICATIONS. . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diode.


    OCR Scan     		PDF MG75H6EL1 Tc-25` MG75H6EL1

    MAX2400

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100Q2YK1 HIGH POWER SWITCHING APPLICATIONS, MOTOR CONTROL APPLICATIONS. Unit in ram FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package.


    OCR Scan     		PDF MG100Q2YK1 MAX2400

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DI SC RE TE /OPT O} * • dF 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR I t o ^tssd 90D 16129 auibiai D t 7"-33~/3 TOSHIBA GTR MODULE MG50H1BS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF MG50H1BS1 50HIBS1-A

    Untitled

    Abstract: No abstract text available
    Text: S P E C I F I C A T I ON • 25367^2 000437=1 TTT ■ Ratings and characteristics of Fuji IGBT 1 M B H 1 OD — 1 2 0 2- Equivalent circuit 1. Outline Drawing C:Collector G:Gate o- FWD C O N N E C T IO N ■ i GATE © CO LLECTO R i Q EM ITTER 3. Absolute maximum ratings


    OCR Scan     		PDF MS5F3688 H04-004-03

    m210 g

    Abstract: J3E diode
    Text: 2DI100Z-100 iooa : Outline Drawings POWER TRAN SISTO R MODULE ÌR 25 F e a tu re s • S W JÏ High Voltage • 7 'J — jfr-f y — KrtflK • A S O A 'J ÏIl' • ÿfeiiïïi Including Free W heeling Diode Excellent Safe Operating Area Insulated Type • Æ liÉ ^ A p p lic a t io n s


    OCR Scan     		PDF 2DI100Z-100 E82988 11S19^ I95t/R89) m210 g J3E diode

    MG75H2YS1

    Abstract: ic l00a l00a
    Text: GTR MODULE SILICON N CHANNEL IG8T MG75H2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm 3-M 5 , 2 3±0.5, 2 3±0.5^ 82 4-FA ST-ON TAB # 1 10 2-<45.6±0.3 • High Input Impedance . High Speed : tf=l.Oys Max. trr=0•5 ys(Max.)


    OCR Scan     		PDF MG75H2YS1 MG75H2YS1 ic l00a l00a

    LP2980AIM

    Abstract: BDI sot23 SOT-23 bdi L028 LP2980AIMSX-3.3 207827 NATIONAL SEMICONDUCTOR 2n4403 L018 DIIH1053 L01A
    Text: National Semiconductor O ctob e r 1994 LP2980 M icro p ow er SOT, 50 mA Ultra Low -D ropout R egulator General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator de­ signed specifically to m eet th e requirem ents o f battery-pow ­


    OCR Scan     		PDF LP2980 LP2980 OT-23 20-3A VIC3168 LP2980AIM BDI sot23 SOT-23 bdi L028 LP2980AIMSX-3.3 207827 NATIONAL SEMICONDUCTOR 2n4403 L018 DIIH1053 L01A

    NJM062

    Abstract: ic njm4558 pin diagram
    Text: J-FET INPUT OPERATIONAL AMPLIFIER NJM062/064 The NJM062/064 are J-F E T input operational amplifiers which were designed as low-power versions of the NJM082. They feature high input impedance, wide bandwidth, high slew rate, and low input offset and bias current. The NJM062


    OCR Scan     		PDF NJM062/064 NJM062/064 NJM082. NJM062 NJM4558/2043/2904/3404/072 NJM064 NJM2902/3403/2058/2059/2060. ic njm4558 pin diagram

    VIPER100

    Abstract: viperl 500 watt smps schematic VIPER100 Application Note VIPER100ASP VIPER100A VIPER100SP VIPER100 300 watt mosfet amplifier Fc-0013 Fc0013 SGS-Thomson
    Text: SGS-THOMSON V IP e r 1 0 0 /S P VI P e r l 0 0 A /A S P M IM i[Li gïïlHΩiD(3S SMPS PRIMARY I.C. AD VA N C E DATA TYPE V In dss R D S (o n ) V IP e r l 00/S P 600V 3 A 2.5 V IP e r l 0 0 A /A S P (*) 670V 3 A 3 .3 a a (*) In d e v e lo p m e n t FEATURE


    OCR Scan     		PDF VIPer100/SP 200KHZ /100A PowerSO-10 VIPER100 viperl 500 watt smps schematic VIPER100 Application Note VIPER100ASP VIPER100A VIPER100SP VIPER100 300 watt mosfet amplifier Fc-0013 Fc0013 SGS-Thomson

    tokin 792

    Abstract: DIODE marking l01A SIEMENS capacitor tantalum marking L01A
    Text: LP2980 & National Semiconductor LP2980 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator d e ­ signed specifically to m eet the requirem ents o f b attery-pow ­ ered applications.


    OCR Scan     		PDF LP2980 LP2980 OT-23 T0-220 tokin 792 DIODE marking l01A SIEMENS capacitor tantalum marking L01A

    Untitled

    Abstract: No abstract text available
    Text: Thf» materni and the Information htretn It the property of Fuji Electric Co.,ltd. They shall ba neither reproduced, copied» lent, or diietated tn any way whatsoever for the u«e of any third party nor used for the manufacturing purpotai without the «qrait written eaiientof Fi|1 Bectrte Co.,Lld.


    OCR Scan     		PDF 2SK2874-01L 2SK2874-01

    rft katalog

    Abstract: transistor vergleichsliste dl 8205 VEB mikroelektronik mikroelektronik RFT "halbleiterwerk frankfurt" DL074D katalog rft TRANSISTOR KATALOG rft mikroelektronik
    Text: [fin ] D[k ä rä fs J E I S l n b r 1! Bipolare digitale Schaltkreise Low -Pow er-S chottky-TTL S c h o ttky -T T L -In te rfa c e -S e rie n il- c Bipolare digitale Schaltkreise Low-Power-Schottky-TTL Sch ott ky-TTL-l nterf a ce-Se r ie Vorwort Der vorliegende Katalog ist vor allem für Konstrukteure und Geräteentwickler


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: A d v a n ced P o w er Te c h n o l o g y O D APT30M45JNR 300V 70A 0.045a APT30M50JNR 300V 65A 0.050Í2 O s ISOTOP* "UL Recognized" Rie No. E145S92 S POWER MOS IVe N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol V DSS All Ratings: Tp = 25°C unless otherwise specified.


    OCR Scan     		PDF APT30M45JNR APT30M50JNR E145S92 APT30M50JNR OT-227

    SS1001

    Abstract: transistor bc 570 GS3A 2sk7884 5a2 DIODE
    Text: TOSHIBA {DISCRETE/OPTO} n De I ^ D T T S S O 99D 1674 5 9097250 TOSHIBA <DISCRETE/OPTO DDlb 7 4 S b DT-^-IS TOSHIBA FIELD EFFECT TRANSISTOR TOSHIBA SEMICONDUCTOR 2 S K 7 8 8 SILICON N CHANNEL HOS TYPE 7T-MOSI ) TECHNICAL DATA INDUSTRIAL APPLICATIONS _ Unit in mm


    OCR Scan     		PDF 100nA 300nA JL59MAX. ID-15A EGA-2SK788-4 EGA-2SK788-5 SS1001 transistor bc 570 GS3A 2sk7884 5a2 DIODE

    F1S50N06

    Abstract: RFP50N06 N-channel MOSFET to-247 50a 50A60V tc2516 TA49018 1S50N
    Text: l i H A R R RFG50N06, RFP50N06, RF1S50N06SM IS r f 1S50N06, s e m i c o n d u c t o r 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC STYLE TO-247 • 50A, 60V • r D S O N = SOURCE 0.022S1 • Temperature Compensating PSPICE Model


    OCR Scan     		PDF 1S50N06, RFG50N06, RFP50N06, RF1S50N06SM O-247 022S1 RF1S50N06, RF1S50N06SM F1S50N06 RFP50N06 N-channel MOSFET to-247 50a 50A60V tc2516 TA49018 1S50N

    X3700

    Abstract: T10601 nec 2401 uPD16631A 1F42 uPD16631 S240 PD16631A muaj
    Text: MOS Integrated Circuit / P D 16631A 2 4 0 f f l* T F T - L C D ff lV “ - ^ • 64PgKfcfj£ /¿PD16631AU, 64PgfiflS^WH5COTFT-LCDfflV-^ • K ^ - f/<?•*-<> x - ^ A ^ l * , M X # ) WT-'i/ffrXlJT, 6t'-y h X 6 hMdc (2 5 X 2 ffli0 ^ * a p (C « i:U y t t jE S n t 6 4 t t t t * l- < i:* 2 6 7 3 fe 0 7


    OCR Scan     		PDF 6631A 64PgKfcfj£ uPD16631AU 64PgfiflS X3700 T10601 nec 2401 uPD16631A 1F42 uPD16631 S240 PD16631A muaj

    Untitled

    Abstract: No abstract text available
    Text: Si GEC PLESSEY _PRELIMINARY INFORMATION S E M I C O N D U C T O R S ACE9030 RADIO INTERFACE AND TWIN SYNTHESISER ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor


    OCR Scan     		PDF ACE9030 ACE9030 37bflS2H 002fcilki7