IC MARKING 54C Search Results

SOT89 transistor marking

Abstract: SOT89 MARKING CODE PNP TRANSISTOR "SOT89" marking code NA sot23 Transistor 5C5 "PNP Transistor" PNP TRANSISTOR SOT89 PNP Epitaxial Silicon Transistor sot223 sot89 "NPN TRANSISTOR" NPN transistor collector base and emitter
Contextual Info: PRODUCT announcement New Tiny Packages High Voltage Small Signal Transistors SOT-563 SOT-523 Dual Single SOT-23 SOT-89 SOT-223 SOT-228 Single Single Single Dual features • VCEO = 160V NPN , 150V (PNP) • IC = 600mA (NPN), 500mA (PNP) • Ideal for high voltage amplifier applications

CMUT5401

Contextual Info: Central TM Semiconductor Corp. CMUT5401 PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.

Contextual Info: CMUT5401 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier

CMUT5401

Abstract: IC MARKING 54C
Contextual Info: CMUT5401 Central TM Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high

CMUT5401

Contextual Info: CMUT5401 SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier

Contextual Info: M O S E L V ITELIC V 54C31732G 2V H IG H P ER FO R M A N C E 166/143 M H z 3.3 VOLT EN HA N CED G R A PHICS 512K X 32 S D R A M 2 BANKS X 256K bit X 32 V54C31732G2V P R E LIM IN A R Y -6 -7 -8 -10 Unit 166 143 125 100 MHz Latency 3 3 3 3 clocks Cycle Tim e tc«

Contextual Info: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium−Power Complementary Silicon Transistors http://onsemi.com . . . designed for general−purpose amplifier and low−speed switching applications. DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

diac kr 206

Abstract: BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE
Contextual Info: PRODUCT CATALOG 2015 MCC TM Micro Commercial Components COMPLETE DISCRETE SEMICONDUCTORS SOLUTIONS POWERED BY SERVICE MCCSEMI.COM MCC TM Micro Commercial Components TM Where to Buy Micro Commercial Components www.arrownac.com www.digikey.com www.futureelectronics.com

BOX 53C IC

Abstract: BOX 53C darlington power transistor box 54c IC BDX53BG BDX54CG pin orientation for bdx53c transistor BDX54B
Contextual Info: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc

Contextual Info: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc

box 53c

Abstract: BDX53BG 100 amp npn darlington power transistors AMP contact assembly bdx53cg 5 amp npn darlington power transistors 500 watts amplifier box 53c IC 1N5825 BDX53B
Contextual Info: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general-purpose amplifier and low-speed switching applications. Features •ăHigh DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc

pin orientation for bdx53c transistor

Abstract: box 54c IC BDX53B 1N5825 BDX53BG BDX53C BDX53CG BDX54B BDX54C MSD6100
Contextual Info: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium−Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − • • • • hFE = 2500 (Typ) @ IC = 4.0 Adc

5A1 equivalent SMD

Abstract: qml-38535 GDFP1-F48 9A248 marking 6a2 smd
Contextual Info: REVISIONS DESCRIPTION LTR DATE APPROVED YR-MO-DA REV SHEET REV SHEET 15 REV STATUS OF SHEETS REV SHEET PM IC N/A STANDARD M ICRO CIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE 1 2 3 4 5 PREPARED BY

GM5WA06270A

Abstract: PT202MR0MP1 GM1WA55360A GM4BC13300AC GM4JV81200AE GM5WA05260A GM5WA05360A GM5WA06250A GM5WA06260A ISO100
Contextual Info: Chip LEDs for Mobile Products Mobile Phone Digital Still Camera PDA SHARP High Luminosity Chip LEDs add live colors to Mobile Products In the application of mobile products, Light Emitting Diode LED is widely used for the back light or the indicator, taking advantage of

4A60

Abstract: A1Z P 73fo 3C70 73E0 1B80 5G10 din 5480 s170 D-10
Contextual Info: MIL-M-38510/224 9 JUNE 1986 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, 262,144 B IT , MOS, ULTRAVIOLET ERASABLE PROGRAMMABLE READ-ONLY MEMORY EPROM MONOLITHIC SILICON T h is s p e c if ic a t io n i s approved fo r use by a l l Depart­ ments and Agencies of the Department o f Defense.

qml-38535

Abstract: CQCC1-N20 GDFP2-F20
Contextual Info: REVISIONS ! DESCRIPTION LTR DATE YR-MO-DA APPROVED j \ REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PM IC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE REV SHEET 1 2

54C906

Abstract: 54C906 similar ELITE EY MM54C906F
Contextual Info: This Material Copyrighted By Its Respective Manufacturer r SCOPE 1.1 Scooe. .This drawing describes the requirements for monolithic s ilic o n , d ig it a l, CJIOS buffers This drawing provides for a level of m icro c irc u it q u ality and r e l i a b i lit y assurance for procurement

RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH

5962-9752701Q3A

Abstract: qml-38535
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 REV STATUS OF SHEETS PMIC N/A REV SHEET 1 2 3 5 4 6 7 8 9 10 11 12 13 PREPARED BY DEFENSE SUPPLY CENTER COLUMBUS Joseph A. Kerby STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE

Ultra Small Voltage Detector with high precision delay circuit and manual reset function

Abstract: XC6127 XC6127N XC6127N55A SSOT24 SSOT-24 xc6127c
Contextual Info: XC6127 Series ETR0217-006 Ultra Small Voltage Detector with High Precision Delay Circuit and Manual Reset Function •GENERAL DESCRIPTION XC6127 series is ultra small highly accurate voltage detector with delay circuit built-in. The device includes a highly accurate reference voltage source, manufactured using CMOS process technology and laser

Contextual Info: XC6127 Series ETR0217-005 Ultra Small Voltage Detector with High Precision Delay Circuit and Manual Reset Function •GENERAL DESCRIPTION XC6127 series is ultra small highly accurate voltage detector with delay circuit built-in. The device includes a highly accurate reference voltage source, manufactured using CMOS process technology and laser

XC6127

Abstract: XC6127N XC6127C 433k u XC6127N15A
Contextual Info: XC6127 Series ETR0217-007 Ultra Small Voltage Detector with High Precision Delay Circuit and Manual Reset Function •GENERAL DESCRIPTION XC6127 series is ultra small highly accurate voltage detector with delay circuit built-in. The device includes a highly accurate reference voltage source, manufactured using CMOS process technology and laser

Contextual Info: ThomasiBetts Barrier Strips Dual Barriers 0.4375" PITCH SERIES SSB7 Physical P roperties H ousing Material: Polypropylene Flammability: UL94V-2 C olor: Black T erminal T erminals: Brass, bright acid tin over copper plat­ ing S crew: Steel with zinc + chromate plating

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-OA APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PMIC N/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENT S AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A ^ |r p 2 1