MARKING KN1
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGN USE FZT491 DZT491 NPN SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available DZT591C Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications
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FZT491
DZT491
DZT591C)
OT-223
J-STD-020C
MIL-STD-202,
DS30946
MARKING KN1
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Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGN USE FZT591 DZT591C PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DZT491 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications
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FZT591
DZT591C
DZT491)
OT-223
J-STD-020C
MIL-STD-202,
DS31127
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Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGN USE FZT658 DZT658 NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications
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FZT658
DZT658
OT-223
OT-223
J-STD-020C
MIL-STD-202,
DS31308
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P315 transistor
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGN USE FZT788B DPLS315E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70m at 3A High DC Current Gain hFE > 300 at IC = 2A
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FZT788B
DPLS315E
DNLS412E)
OT-223
DS31325
P315 transistor
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Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGN USE FZT688B DNLS412E LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 57.5m at 4A High DC Current Gain hFE > 400 at IC = 3A
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FZT688B
DNLS412E
DPLS315E)
OT-223
DS31324
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Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGN USE FZT751 DZT751 LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available (DZT651) Ideally Suited for Automated Assembly Processes
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FZT751
DZT751
DZT651)
OT-223
OT-223
J-STD-020C
MIL-STD-202,
DS31115
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Untitled
Abstract: No abstract text available
Text: Not recommended for new design. Alternative is FZT789A DPLS325E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Features N • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70m at 3A High DC Current Gain hFE > 200 at IC = 2A
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FZT789A
DPLS325E
DNLS320E)
OT-223
OT-223
J-STD-020D
DS31327
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transistor fzt651
Abstract: MARKING KN2
Text: NOT RECOMMENDED FOR NEW DESIGN USE FZT651 DZT651 LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DZT751) Ideally Suited for Automated Assembly Processes
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FZT651
DZT651
DZT751)
OT-223
OT-223
J-STD-020C
MIL-STD-202,
20out
DS30809
transistor fzt651
MARKING KN2
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type PNP Silicon Planar Medium Power Transistor FZT589 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 -0.2 • Features ● Power Collector dissipation: PC=2W ● Continuous Collector Current: IC=-1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 6.50 +0.2
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FZT589
OT-223
-100mA
-500mA
-100mA
100MHz
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smd transistor pnp 591
Abstract: No abstract text available
Text: Transistors IC SMD Type PNP Silicon Planar Medium Power Transistor FZT591 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 -0.2 • Features ● Power Collector dissipation: PC=2W ● Continuous Collector Current: IC=-1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 6.50 +0.2
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FZT591
OT-223
-100mA
-500mA
-50mA
100MHz
smd transistor pnp 591
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification FZT489 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 ● Continuous Collector Current: IC=1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● Power Dissipation: PC=2W +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3
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FZT489
OT-223
100mA
200mA
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Untitled
Abstract: No abstract text available
Text: Product specification FZT589 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 -0.2 • Features ● Power Collector dissipation: PC=2W ● Continuous Collector Current: IC=-1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 6.50 +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3 4 1 Base
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FZT589
OT-223
-100mA
-500mA
-100mA
100MHz
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Untitled
Abstract: No abstract text available
Text: Product specification FZT591A SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 -0.2 • Features ● Power Collector dissipation: PC=2W ● Continuous Collector Current: IC=-1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 6.50 +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3 4 1 Base
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FZT591A
OT-223
-100mA
-50mA
-100mA
-500mA,
-50mA
100MHz
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TRANSISTOR SMD 491
Abstract: No abstract text available
Text: Transistors IC SMD Type NPN Silicon Planar Medium Power Transistor FZT491 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 ● Continuous Collector Current: IC=1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● Power Dissipation: PC=2W +0.2 0.90-0.2 +0.1
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FZT491
OT-223
500mA;
100mA
TRANSISTOR SMD 491
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type PNP Silicon Planar Medium Power Transistor FZT591A SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 -0.2 • Features ● Power Collector dissipation: PC=2W ● Continuous Collector Current: IC=-1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 6.50 +0.2
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FZT591A
OT-223
-100mA
-50mA
-100mA
-500mA,
-50mA
100MHz
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MARKING SMD PNP TRANSISTOR 2a
Abstract: smd transistor MARKING 2A marking fzt790a smd transistor 2A FZT790A
Text: Transistors SMD Type PNP Silicon Planar Medium Power High Gain Transistor FZT790A SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Low equivalent on-resistance; RCE sat 125mÙ at 2A. Gain of 200 at IC=1 Amps and Very low saturation voltage. +0.1 3.00-0.1 +0.15 1.65-0.15
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FZT790A
OT-223
-10mA
-50mA
-10mA,
-500mA,
-50mA,
50MHz
MARKING SMD PNP TRANSISTOR 2a
smd transistor MARKING 2A
marking fzt790a
smd transistor 2A
FZT790A
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification FZT491 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 ● Continuous Collector Current: IC=1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● Power Dissipation: PC=2W +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3
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FZT491
OT-223
500mA;
100mA
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type NPN Silicon Planar Medium Power Transistor FZT489 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 ● Continuous Collector Current: IC=1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● Power Dissipation: PC=2W +0.2 0.90-0.2 +0.1
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FZT489
OT-223
100mA
200mA
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Untitled
Abstract: No abstract text available
Text: Product specification FZT591 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 -0.2 • Features ● Power Collector dissipation: PC=2W ● Continuous Collector Current: IC=-1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 6.50 +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3 4 1 Base
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FZT591
OT-223
-100mA
-500mA
-50mA
100MHz
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MARKING SMD npn TRANSISTOR 1a
Abstract: FZT692B smd transistor marking 1A TRANSISTOR SMD 1A smd ic marking 1A smd transistor 2A TRANSISTOR SMD 1a 9 SMD TRANSISTOR MARKING 2A SOT223 marking 1A BR smd transistor MARKING
Text: Transistors SMD Type NPN Silcon Planar Medium Power High Gain Transistor FZT692B SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 High gain + very low saturation voltage. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3
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FZT692B
OT-223
200mA
100mA,
500mA,
50MHz
MARKING SMD npn TRANSISTOR 1a
FZT692B
smd transistor marking 1A
TRANSISTOR SMD 1A
smd ic marking 1A
smd transistor 2A
TRANSISTOR SMD 1a 9
SMD TRANSISTOR MARKING 2A SOT223
marking 1A
BR smd transistor MARKING
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Untitled
Abstract: No abstract text available
Text: Product specification FZT549 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 -0.2 • Features ● Power Collector dissipation: PC=2W ● Continuous Collector Current: IC=-1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 6.50 +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3 4 1 Base
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FZT549
OT-223
-100mA
-50mA,
-500mA
-100mA
100MHz
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type PNP Silicon Planar Medium Power High Transistor FZT1151A SOT-223 • Features Unit: mm +0.2 3.50-0.2 ● Low saturation Voltage ● High Gain +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3
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FZT1151A
OT-223
-10mA
-500mA;
-70mA
-250mA
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Untitled
Abstract: No abstract text available
Text: Product specification FZT790A SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Low equivalent on-resistance; RCE sat 125mÙ at 2A. Gain of 200 at IC=1 Amps and Very low saturation voltage. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2
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FZT790A
OT-223
-10mA
-10mA,
-500mA,
-50mA,
50MHz
-50mA
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964312-1
Abstract: No abstract text available
Text: CUSTOMER-PART Ku nde n -Te i I e MATERIAL MARKING Mafer ia lk en nze Ic hn u ng 'SPT ' 4,8mm MALE TERM, SINGLE-WIRE S E A T LOR SET 4 ^ M m \ d C S 2\ 1 . 5 mm \MALE\ T E R M ^ ^ T YCO- PA R T- NO, CONTACT BODY: 4 , 0 0 mmA2 \ \ 964314-1 Grundfeder: Cu Fe
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