IC POWER 22E Search Results

Contextual Info: MICROCHIP TECHNOL OGY INC 22E D blD3SDl 00QM7T7 ñ 27HC64 M ic r o c h ip 64K 8K x 8 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • Bipolar Performance — 40ns Maximum Access Time • CMOS Technology For Low Power Consumption — 80mA Active Current

2SA1588

Abstract: 2SC4118
Contextual Info: 2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1588 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

2SA1588

Abstract: 2SC4118
Contextual Info: 2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1588 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

Contextual Info: 2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1588 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

Contextual Info: 2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1588 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity • Unit: mm : hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

2SA1588

Abstract: 2SC4118 toshiba marking
Contextual Info: 2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4118 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm Switching Applications • Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)

2sc4118

Abstract: 2SA1588
Contextual Info: 2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1588 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity • Unit: mm : hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

2SA1588

Abstract: 2SC4118
Contextual Info: 2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4118 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • • Unit: mm Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)

Contextual Info: 2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1588 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • • Unit: mm Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

2SA1588

Abstract: 2SC4118
Contextual Info: 2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4118 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • • Unit: mm Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)

Contextual Info: 2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4118 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • • Unit: mm Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)

2SA1588

Abstract: 2SC4118 JEDEC SC-70
Contextual Info: 2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4118 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • · Unit: mm Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)

Contextual Info: 2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4118 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • • Unit: mm Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)

t 3866 power transistor

Abstract: t 3866 transistor c 3866 transistor transistor t 3866 3866 transistor C 3866 t 3866 transistor 3866 3866 2n 3866 transistor
Contextual Info: 2N 3866 NPN S IL IC O N T R A N SIST O R , E P IT A X IA L P L A N A R T R A N S IS T O R N P N S IL IC IU M , P L A N A R E P IT A X IA L - VHF-UHF ampliftors and ofcHlaton AmpUfkttmjrt ou otcMttmjn VHF-UHF Maximum power dissipation v CEO 30V v CEsat<100/200 m A*

AY58126

Contextual Info: MICROCHIP TECHNOLOGY INC — 25E D • bl03SQl OOOM'lb? 7 ■ • T -7 5 -S ^ -O Ì ^ AY58126/8126T AY58146/8146T M ic r o c h ip SINGLE BAUD RATE GENERATOR FEATURES PIN CONFIGURATIONS • Single +5V power supply • On-chip crystal oscillator 8126/8146 or external

27HC191

Abstract: 27HC tcs2
Contextual Info: MICROCHIP TECHNOLOGY INC 5EE D • blD3SQl Q0QMÖ05 3 'F W r llr Z q M 27HC191 /27HC291 ic r o c h ip 16K 2K x 8 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • Bipolar performance — 35ns Access time available • CMOS technology for low power consumption

26c64

Abstract: 26C64B 28C64B 28C64B-25 28C64B-70 28C64 28C64B-12 28C64B-90 28C64B EEPROM *26C64
Contextual Info: 28C64B M ic r o c h ip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 7 0 ,90 ,1 2 0 ,1 50 ,2 0 0 , 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA Active • 150|iA Standby • Fast Write Cycle Times

2N5109

Abstract: rca 2N5109 RCA-2N5109 TA2800 2n5109 rca CF-102-Q1 IN5109 transistor 2N5109 rca 0190 transistor field strength meter
Contextual Info: File No. 281 RF Power T ran sisto rs Solid State Division 2N5109 Silicon N-P-N Overlay Transistor High G ain fo r Line A m p lifie rs in C A T V and M A T V E q uip m en t Features: • High gairvbandwidth product ■ Large dynam ic range ■ Low distortion

8748E

Abstract: LA 4440 IC 555E-03 IC 4033 internal structure ds1633k
Contextual Info: D S 1 63 3 D A L L A S s e m ic o n d u c to r FEATURES DS1633 High-Speed Battery Recharger PIN ASSIGNMENT TO-22Q Recharges Lithium, NiCad, NiMH and Lead a d d bat­ teries Retains battery and power supply lim its in onboard mem ory Serial 1 -w ire interface is used to program operat­

power 22E

Abstract: 2SC4399 ic power 22E
Contextual Info: SANYO SEMICONDUCTOR CÔRP 22E D 7m07h Q OO b T E T S F eatures • High power gain: PG= 25dB typ f= 100MHz •Very small-sized package permitting the 2SC4399-applied sets to be made small and slim Absolute Maximum R atings atT a= 2 5 0C Collector to Base Voltage

DAC73K

Abstract: DAC736K DAC736 AC736 DAC73 DAC73/736
Contextual Info: BURR-BROÙJN CORP 22E D • 17313bS c E 3 E 3 3 ■ T-S/-Q?’/é DAC73 DAC736 BURR-BROW N Ì G D lbb b ? B High Resolution 16-BIT DIGITAL-TO-ANALOG CON VERTER FEATURES • 16-BIT RESOLUTION • ±1/2LSB MAXIMUM NONLINEARITY •LO W DRIFT • CURRENT OR VOLTAGE OUTPUT

Contextual Info: Analog signal isolator 2-channel IM35-22EX-HI/24VDC The standard current signal is galvanically separated and transferred via the 2-channel isolating transducer IM35-22EX-HI/24VDC from the non-Ex area to the Ex-area without attenuation 1:1 . In addition to analog signals,

Contextual Info: SANYO SEMICONDUCTOR CORP 22E D 7n7Q7ti OOOhööS T -3H 5 2SC4406 2059 N P N Epitaxial P la n a r S ilic o n T ra n s is to r VHF M IX, OSC Applications 2759A A p p lic a tio n s •V H F m ixers, frequency converters, local oscillators F e a tu r e s • H igh cutoff frequency : f r = 1 .2GHz typ

Contextual Info: Potentiometer amplifier 2-channel IM36-22EX-I The 2-channel potentiometer amplifier IM36-22EX-I separates signals from 3-wire or 5-wire potentiometers and transfers these as standard 0/4…20 mA analog signals from the Ex area to the non-Ex area. Live-zero operation is activated for both channels through