IC POWER SO 8 SINGLE MOSFET Search Results

power mosfet 100v 250w

Abstract: n-channel 250w power mosfet
Contextual Info: CONTROL IC THE POWER MANAGEMENT LEADER IR5001S Active ORing IC Makes Redundant Systems More Efficient IR ADVANTAGE • IC controller and driver in a single SO-8 package • Suitable for both input ORing and output ORing for redundant DC-DC and AC-DC power supplies

Contextual Info: ► AN A LO G D E V IC E S +3 Volt, Serial Input Complete 12-Bit DAC AD8300 FEATURES Complete 12-Bit DAC No External Components Single +3 Volt Operation 0.5 m V/Bit with 2.0475 V Full Scale 6 .is Output Voltage Settling Time Low Power: 3.6 mW Compact SO-8 1.5 mm Height Package

Contextual Info: JÜ0MERSÍ 7294621 § POWEREX "iß INC dF | aGoa?fl7 ^ ; T-39-13 JS010504 Tentative Single EXMOS MOSFET Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 40 Amperes/50 Volts Dimension A Inches .787 Millimeters 20 B .614 15.6 C .214 ± .0 0 8

IR2110 IGBT DRIVER

Abstract: IGBT DRIVER SCHEMATIC 3 PHASE IR2110 MOSFET DRIVER 2132S ic 2125 8 pin IR2110 gate driver for mosfet ir2110 single mosfet 2130J IR2110 16 pin half bridge ir2110
Contextual Info: International SMIRectifier Power Integrated Circuits Control 1C Applications High Voltage Power MOSFET/IGBT Gate Drivers Features Half Bridge Drivers Single Drivers iti1MOSFET □ I U MOSFET IR IR — IGBT —* —I*- IGBT 1 1 Three Phase Drivers Three High and Three Low Side

max4420

Contextual Info: 19-0039; RevO; 11/92 High-Speed, 6A Single M OSFET Drivers G e n e ra l D e s c rip tio n A 40ns delay tim e and a 25ns rise or fall tim e while driving 2500pF to 18V m inimize pow er losses during MOSFET sw itching transitions. The M AX4420/MAX4429/M XT429 interface easily with

ic driver mosfet 8 pin

Abstract: 14 pin ic 555 DRIVER MOSFET IR IGBT DRIVER SCHEMATIC 3 PHASE IR2132 igbt gate driver IR igbt gate driver ic IR2113 APPLICATIONS Mosfet driver IR2130 ir 2112 applications IGBT gate drivers
Contextual Info: International ^ R e c tifie r Pow er Integrated Circuits Control 1C Applications High Voltage Power MOSFET/IGBT Gate Drivers Features Single Drivers Half Bridge Drivers — IR —*• - -it! MOSFET “IQ IH MOSFET y — IR IGBT y —1^ IGBT — 1 1 Three Phase Drivers

300 volt 5 ampere mosfet

Abstract: JS012502 13002 FL sr 13002
Contextual Info: 7294621 POWEREX INC ' Tfl DE 1 7 2 T 4 t i S l GG0277S E | JS012502 JS013002 fo m cn sr T" 39-13 Tentative Single EXMOS MOSFET Powerex, Inc., Hillls S treet, Youngwood, Pennsylvania 15697 412 925-7272 20 Amperes/250-300 Volts Description Dimension A Inches

MIC1427CM

Contextual Info: M IC 1 4 2 6 /1 4 2 7 / 1 4 2 8 1.2A Dual High-Speed MOSFET Drivers Bipolar/CMOS/DMOS Process General Description Features Low Cost Latch-Up Protected: Will Withstand 500mA Reverse Output Current ESD Protected. ±2kV

TL494 PWM motor

Abstract: 5v dc power supply with TL494 TL494 PWM IC 8-PIN DIP logic tsc170 tl494 motor
Contextual Info: M IC I 4 2 6 /1 4 2 7 /1 4 2 8 R IE H L Dual 1.2A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC1426/27/28 are a family of 1.2A dual high-speed drivers. They are ideal for high-volume OEM manufacturers, with latch-up protection, and ESD protection. BiCMOS/DMOS

TL494

Abstract: SN 1428 tl494 motor IC1428
Contextual Info: M IC I 4 2 6 /1 4 2 7 /1 4 2 8 1.2A Dual High-Speed MOSFET Drivers Bipolar/CMOS/DMOS Process General Description Features The MIC1426/27/28 are a fam ily of 1.2A dual high-speed drivers. They are ideal for high-volum e OEM manufacturers, with latch-up protection, and ESD protection. BiCMOS/DM OS

EL7114CN

Abstract: el inverter Schematic EL7104C EL7104CN EL7104CS EL7114CS EL7114 MOSFET 4420 power mosfet drivers 7104C
Contextual Info: EL7104C/ EL7114C ìa n t e c ËL7104C/EL7114C High Speed, Single Channel, Power MOSFET Driven F e a tu r e s G e n e r a l D e s c r ip tio n • I n d u s try s ta n d a rd d riv e r re p lacem en t • Im p ro v e d resp o n se tim es • M a tc h e d rise a n d fall tim e s

str3a100

Abstract: STR3A153 STR3A100D Television sanken sanken audio STR3A154D STR-3A155D str3a162 STR3A100D switching power supply
Contextual Info: Application Information STR3A100 Series PWM Off-Line Switching Regulator ICs General Description STR3A100 series are power ICs for switching power supplies, incorporating a power MOSFET and a current mode PWM controller IC in one package. Including a startup circuit and a standby function in the controller, the product achieves low power consumption, low

IC 40110

Abstract: TPD1032F 40110
Contextual Info: TPD1032F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1032F 2-IN-1 Low-Side Power Switch for Motor, Solenoid and Lamp Drive The TPD1032F is a 2-IN-1 low-side switch. The IC has a vertical MOSFET output which can be directly

FDS9933A

Contextual Info: c ; CJ V :L jL J C v FDS9933A Dual P-Channel 2.5V Specified PowerTrench MOSFET G eneral Description Features These P-Channel 2.5V specified M OSFETsare produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored to minimize the

Contextual Info: TPD1032F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1032F 2-IN-1 Low-Side Power Switch for Motor, Solenoid and Lamp Drive The TPD1032F is a 2-IN-1 low-side switch. The IC has a vertical MOSFET output which can be directly

IC 40110

Abstract: TPD1032F
Contextual Info: TPD1032F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1032F 2-IN-1 Low-Side Power Switch for Motor, Solenoid and Lamp Drive The TPD1032F is a 2-IN-1 low-side switch. The IC has a vertical MOSFET output which can be directly

1rf830

Abstract: 1rf840 RF822 IRFB40R IRF820R IRF830R J50 mosfet IRFS30 RF842 IRF820
Contextual Info: HLAJRRIS IRF820/82 i/822/823 IRF820R/821R/822R/823R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Fea tu res Package T 0 -2 2 0 A B TOP VIEW • 2.2 and 2.5A, 450V - 500V • f D S !0 0 = 3 -0 i l an d DRAIN FLAN GE) • Single Pulse Avalanche Energy Rated*

HIGH POWER MOSFET TOSHIBA

Abstract: TPD1032F
Contextual Info: TPD1032F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1032F 2-IN-1 Low-Side Power Switch for Motor, Solenoid and Lamp Drive The TPD1032F is a 2-IN-1 low-side switch. The IC has a vertical MOSFET output which can be directly

siliconix an803

Contextual Info: Tem ic AN803 Siliconix Thermal Characteristics of Siliconix’s LITTLE FOOT Family of Surface-Mount MOSFETs A lth o u g h a w id e sele c tio n o f digital an d lin e a r IC s have b e en available in su rfa c e-m o u n t p ack ag es fo r som e tim e, circuits th a t re q u ire p o w e r devices have, fo r th e

Contextual Info: FAIRCHILD S E M IC O N D U C T O R October 1998 tm FDS6675 Single P-Channel, Logic Level, PowerTrench General Description MOSFET Features T his P-Channel Logic Level M O SFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored to m inimize

1426c

Abstract: IC1427 ic1426
Contextual Info: MICI 426/1427/1428 Dual 1.2A Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features Low Cost Latch-Up Protected: W ill W ithstand 500mA Reverse Output Current ESD P ro te c te d . ±2kV

HAT1128R

Abstract: RJJ0315DSP HAT1125H RJK0351DPA RJK0380DPA HAT2215R hat1128 hat2215 HAT1054R RJK0329DPB
Contextual Info: April 2010 Renesas Electronics Power MOSFETs for DC/DC Converter – 1 Improving Supply Efficiency by Low Loss Features Low ON resistance, High-speed switching, Low Qg. Applications Merits Improve power supply efficiency for energy saving , Fast response

Contextual Info: 1.5A Dual High Speed MOSFET Drivers calodic CORPORATION CLM4426 /CLM4427/CLM4428 FEATURES DESCRIPTION • • • • • The CLM4426 series are dual CMOS drivers are designed to drive capacitive, resistive and inductive loads switching 1000pF gate capacitances in under 30ns while providing low

itc 1426c

Abstract: IC1427 IC1426C 1428C 1428cn
Contextual Info: MICI 426/1427/1428 Dual 1.2A-Peak Low-Side MOSFET Driver • M E R E ! . Bipolar/CMOS/DMOS Process Features General Description Low Cost Latch-Up Protected: W ill Withstand 500mA Reverse Output Current ESD P ro te cte d . ±2kV