IC SRAM 8K X 8 Search Results

Contextual Info: MT56C3818 8K x 18, DUAL 4K x 18 CACHE DATA SRAM M IC R O N CACHE DATA SRAM SINGLE 8Kx18 SRAM, DUAL 4KX18SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 18 SRAMs with common addresses and data; also configurable as a single 8K x 18 SRAM

74LS373 PIN CONFIGURATION AND SPECIFICATIONS

Abstract: intel 80386
Contextual Info: MT56C3816 8K x 16, DUAL 4K x 16 CACHE DATA SRAM M IC R O N SINGLE 8Kx 16 SRAM, DUAL 4Kx16 SRAM CACHE DATA SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 16 SRAMs with common addresses and data; also configurable as a single 8K x 16 SRAM

a12w

Abstract: 74LS373 PIN CONFIGURATION AND SPECIFICATIONS
Contextual Info: M IC R O N MT56C0818 DUAL 4 K x 1 8 SRAM, SINGLE 8K x 18 SRAM CACHE DATA SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 18 SRAM s with common ad dresses and data; also configurable as a single 8K x 18 SRAM • Built-in input ad dress latches

i1991

Abstract: intel 80386 pin diagram
Contextual Info: PRELIMINARY |U |IC R O N M T 56C 3816 C A C H E D ATA QPAM 4K x 16 s r a m , SINGLE 8K x 16 SRAM O riM IV I CONFIGURABLE CACHE DATA SRAM dual FEATURES • Operates as two 4K x 16 SRAMs with common addresses and data; also configurable as a single 8K x 16 SRAM

pin diagram of IC 74LS373

Contextual Info: M IC R O N MT56C0816 CACHE DATA SRAM DUAL 4Kx16 SRAM, SINGLE 8Kx16 SRAM CONFIGURABLE CACHE DATA SR A M FEATURES • O perates as two 4K x 16 SRAM s with common ad dresses and data; also configurable as a single 8K x 16 SRAM • Built-in input ad dress latches

Contextual Info: □PM DPS832V Dense-Pac Microsystems, I n a , CMOS SRAM VERSAPAC MODULE DESCRIPTION: The DPS832V is a 66-pin Pin Grid Array PGA consisting of four 8K X 8 SRAM devices in ceramic LC C packages surface mounted on a co-fired ceram ic substrate with m atching thermal

80486 microprocessor pin out diagram

Contextual Info: M IC R O N I l l 1“ 1 M T 56C 3818 8 K x 18, D U A L 4K x 18 C A C H E D A T A S R AM C A C H E DATA single c D U A L 4 K x 18 SRAM d a m O r lM IV I 8K x 18 sram , CONFIGURABLE CACHE DATA SRAM FEATURES PIN ASSIGNMENT Top View • Operates as two 4K x 18 SRAMs with common

Contextual Info: DPS832V Dense-Pac Microsystems, Inc. ^ CMOS SRAM VERSAPAC MODULE DESCRIPTION: The DPS832V is a 66-pin Pin Grid Array PGA consisting of four 8K X 8 SRAM devices in ceramic LCC packages surface mounted on a co-fired c e ra m ic su b stra te w ith m a tc h in g th erm al

Contextual Info: DALLAS s e m ic o n d u c to r DS1243Y 64K NV SRAM with Phantom Clock PIN ASSIGNMENT FEATURES • Real time clock keeps track of hundredths of seconds, seconds, minutes, hours, days, date of the month, months, and years 28 • Vcc 27 jj 26 j • 8K x 8 NV SRAM directly replaces volatile static RAM

8k*8sram

Contextual Info: Electronic Designs Inc. EDH88H08C-55/70/10 MILITARY BP* & •-*>* • 8K x 8 SRAM CMOS T h e EDH88H08C 8K x 8 is p a rt o f a new fa m ily o f H igh Speed S tatic RAM devices developed b y E lectronic Designs Inc. T h e EDH88H08C uses the advanced EDI M EM OR YPAC K packaging conce p t w h ic h m o un ts several LCC

Contextual Info: T em ic HM 65764 MATRA MHS 8K x 8 High Speed CMOS SRAM Description The HM 65764 is a high speed CMOS static RAM organized as 8192x8 bits. It is manufactured using MHS high performance CMOS technology. Access times as fast as 15 ns are available with maximum

t19l

Abstract: mt5C6408
Contextual Info: [M IC R O N MT5C6408 SRAM 8K X 8 SRAM • High speed: 8 ,1 0 ,1 2 , 15, 20, 25 and 35ns • H igh-perform ance, low -pow er, CM O S double-m etal process • Single +5V ±10% pow er supply • Easy m em ory expansion w ith CE1, CE2 and OE options • All inputs and outputs are TTL com patible

Contextual Info: DS12250/E DALLAS DS1225D/E 64K Nonvolatile SRAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 8K EEPROM x 8 volatile static RAM or • Low-power CMOS

1117hm

Abstract: SMD-5962-38294
Contextual Info: T em ic HM 65764 S emi co nd uc t or s 8K X 8 High Speed CMOS SRAM Short description. Please refer to the full datasheet available on TEMIC web for detailed technical information. Description The HM 65764 is a high speed CMOS static RAM organized as 8192x8 bits. It is manufactured using

Contextual Info: D S 1225AB/AD DALLAS DS1225AB/AD 64K Nonvolatile SRAM s e m ic o n d u c t o r FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC | i A12 | 2 • Data is automatically protected during power loss • Directly replaces 8K x 8 volatile static RAM or

T56 marking

Abstract: MT56C0816EJ mt56C0816
Contextual Info: MICRON MT 56C 081 6 8K x 16, DUAL 4K x 16 CACHE DATA SRAM 1 SINGLE 8 K X 1 6 S R A M DUAL 4 K x 16 SRAM CACHE DATA SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 16 SRAMs with common addresses and data; also configurable as a single 8K x 16 SRAM

Contextual Info: M lfP H M I y MT56C3816 8K x 16, DUAL 4K x 16 CACHE DATA SRAM SINGLE 8 Kx 16 SRAM, DUAL 4K x 16 SRAM CACHE DATA SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 16 SRAMs with common addresses and data; also configurable as a single 8K x 16 SRAM

3B-36

Contextual Info: M RON I I C r-i'-M'v MT56C2818 8K x 18, DUAL 4K x 18 CACHE DATA SRAM S IN G LE 8 K x 1 8 SR A M , D U A L 4K x 18 SRAM CACHE DATA SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Autom atic W RITE cycle completion • Operates as two 4K x 18 SRAM s w ith common

rfid cards with AT89c2051 ic

Abstract: sram 5volt 4m AT45DB041 AT29C020 MCU00100 AT27BV020 AT27BV040 AT27BV1024 AT27BV256 AT27BV400
Contextual Info: PRODUCT GUIDE April 1998 EPROMs Part Number Organization Speeds Description Availability Battery-Voltage 2.7V to 3.6V AT27BV256 32K x 8 70-150 ns 256K bit, 2.7-Volt to 3.6-Volt EPROM Now AT27BV512 64K x 8 70-150 ns 512K bit, 2.7-Volt to 3.6-Volt EPROM

LT 543 IC pin diagram

Abstract: pin diagram of lt 542
Contextual Info: MT56C0818 8K x 18, DUAL 4K x 18 CACHE DATA SRAM |U |C R O N CACHE DATA SRAM SINGLE 8Kx18 SRAM, DUAL 4K x 18 SRAM CONFIGURABLE CACHE DATA SRAM FEATURES PIN ASSIGNMENT Top View • Operates as two 4K x 18 SRAM s w ith common addresses and data; also configurable as a single

MT5C6408

Contextual Info: I^ IIC R O N 8K SRAM MT5C6408 X 8 SRAM 8K X 8 SRAM PIN ASSIGNMENT Top View • High speed: 8*, 10,12,15, 20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE1, CE2 and OE

Contextual Info: M IC R O N * MT56C2818 8 K x 18, DUAL 4 K x 18 CACHE DATA SRAM CACHE DATA SRAM SINGLE 8Kx18 SRAM, DUAL 4KX18SRAM CONFIGURABLE CACHE DATA SRAM FEATURES PIN ASSIGNMENT Top View • A u tom atic W RITE cycle com pletion • O p erates a s tw o 4K x 18 SR A M s w ith com m on

8M-BIT CMOS SERIAL FLASH GENERAL

Abstract: AT27BV010 AT27BV020 AT27BV040 AT27BV1024 AT27BV256 AT27BV4096 AT27BV512 AT27BV800 TQFP 100 PACKAGE
Contextual Info: PRODUCT GUIDE October 1997 EPROMs Part Number Organization Speeds Description Availability Battery-Voltage 2.7V to 3.6V AT27BV256 32K x 8 70-150 ns 256K bit, 2.7-Volt to 3.6-Volt Now AT27BV512 64K x 8 90-150 ns 512K bit, 2.7-Volt to 3.6-Volt Now AT27BV010

Contextual Info: I^ICRQN 8K SRAM MT5C6408 X 8 SRAM 8K X 8 SRAM PIN ASSIGNMENT Top View • H ig h sp eed : 9 , 1 0 ,1 2 , 1 5 , 20 an d 25n s • H ig h -p e rfo rm a n ce, lo w -p o w er, C M O S d o u b le-m eta l p ro cess • Sin g le + 5 V ± 1 0 % p o w er su p p ly _