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    IC TB 1245 Search Results

    IC TB 1245 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC TB 1245 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GA100TS120K

    Abstract: ic tb 1245
    Text: PRELIMINARY GA100TS120K ]HALF-BRODGE” IGBT INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT Features • • VCES=1200V Generation 5 IGBT NPT technology


    Original     		PDF GA100TS120K GA100TS120K ic tb 1245

    GA100TS120UPBF

    Abstract: No abstract text available
    Text: Preliminary Data Sheet I27243 12/06 GA100TS120UPbF "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


    Original     		PDF I27243 GA100TS120UPbF GA100TS120UPBF

    GA100TS120U

    Abstract: No abstract text available
    Text: PD - 50060B GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF 50060B GA100TS120U T52-7105 GA100TS120U

    GA100TS120U

    Abstract: No abstract text available
    Text: PD - 5.060A PRELIMINARY GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA100TS120U GA100TS120U

    MPSA42 168

    Abstract: U3760MB-N ic 1240 ringer ic 1240 ringer pin diagram 220UF 2N5401 BC546 MPSA42 U3760MB-NFN atmel 948
    Text: U3760MB-N Low-Voltage Standard Telephone Circuit Description Atmel Wireless & Microcontrollers’ low-voltage telephone circuit, U3760MB-N, performs all the speech and line interface functions required in an electronic telephone set tone ringer, pulse and DTMF dialing with


    Original     		PDF U3760MB-N U3760MB-N, D-74025 06-Mar-01 MPSA42 168 U3760MB-N ic 1240 ringer ic 1240 ringer pin diagram 220UF 2N5401 BC546 MPSA42 U3760MB-NFN atmel 948

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


    Original     		PDF DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl

    ic 1240 ringer

    Abstract: ic 1240 ringer pin diagram piezo pre audio amplifier 2N5401 BC546 MPSA42 U3760MB ic 1240 ringer 8 pin diagram
    Text: U3760MB Low-Voltage Standard Telephone Circuit Description TEMIC’s low-voltage telephone circuit, U3760MB, performs all the speech and line interface functions required in an electronic telephone set tone ringer, pulse and DTMF dialing with redial. Features


    Original     		PDF U3760MB U3760MB, D-74025 09-Aug-96 ic 1240 ringer ic 1240 ringer pin diagram piezo pre audio amplifier 2N5401 BC546 MPSA42 U3760MB ic 1240 ringer 8 pin diagram

    2N5401

    Abstract: BC546 MPSA42 U3760MB ic 1240 ringer pin diagram 1240 ringer ic 1240 ringer 8 pin diagram
    Text: U3760MB Low-Voltage Standard Telephone Circuit Description TEMIC’s low-voltage telephone circuit, U3760MB, performs all the speech and line interface functions required in an electronic telephone set tone ringer, pulse and DTMF dialing with redial. Features


    Original     		PDF U3760MB U3760MB, D-74025 09-Aug-96 2N5401 BC546 MPSA42 U3760MB ic 1240 ringer pin diagram 1240 ringer ic 1240 ringer 8 pin diagram

    MPSA42 168

    Abstract: 220UF 2N5401 BC546 MPSA42 U3760MB-N U3760MB-NFN
    Text: U3760MB-N Low-Voltage Standard Telephone Circuit Description TEMIC Semiconductors’ low-voltage telephone circuit, U3760MB-N, performs all the speech and line interface functions required in an electronic telephone set tone ringer, pulse and DTMF dialing with redial.


    Original     		PDF U3760MB-N U3760MB-N, D-74025 31-May-99 MPSA42 168 220UF 2N5401 BC546 MPSA42 U3760MB-N U3760MB-NFN

    GA100TS120UPBF

    Abstract: No abstract text available
    Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode


    Original     		PDF GA100TS120UPbF 12-Mar-07 GA100TS120UPBF

    GA100TS120UPBF

    Abstract: No abstract text available
    Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS COMPLIANT


    Original     		PDF GA100TS120UPbF 18-Jul-08 GA100TS120UPBF

    E78996 datasheet bridge

    Abstract: No abstract text available
    Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA100TS120UPbF E78996 2002/95/EC 18-Jul-08 E78996 datasheet bridge

    GA100TS120UPBF

    Abstract: No abstract text available
    Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode


    Original     		PDF GA100TS120UPbF 12-Mar-07 GA100TS120UPBF

    GA100TS120UPBF

    Abstract: No abstract text available
    Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS COMPLIANT


    Original     		PDF GA100TS120UPbF 18-Jul-08 GA100TS120UPBF

    SSD1298

    Abstract: MARKING S403 KVP45 MARKING S196 SSD1298Z sdc 606 KVP29 MARKING S410 marking S193 marking s186
    Text: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1298 Advance Information 240 RGB x 320 TFT LCD Controller Driver integrated Power Circuit, Gate and Source Driver with built-in RAM This document contains information on a new product. Specifications and information herein are subject to change


    Original     		PDF SSD1298 2002/95/EC) SJ/T11364-2006) SSD1298 MARKING S403 KVP45 MARKING S196 SSD1298Z sdc 606 KVP29 MARKING S410 marking S193 marking s186

    HE80012M

    Abstract: HE80012S HE80016M HE80016S HE80021M HE80021S HE83000 HE83115 HE8P160 Jess Technology
    Text: Suites 2202-7, Tower 6, The Gateway, 9 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 852 2123 3289 Fax: (852) 2123 3393 E-mail: sales@jesstech.com Home Page: www.jesstech.com HE8P160 HE80000 SERIES A. HE8P160 Introduction HE8P160 is a member of 8-bit Micro-controller OTP series product developed by Jess


    Original     		PDF HE8P160 HE80000 HE8P160 HE80012S, HE80016S, HE80021S, HE83000, HE80012M, HE80012M HE80012S HE80016M HE80016S HE80021M HE80021S HE83000 HE83115 Jess Technology

    Untitled

    Abstract: No abstract text available
    Text: 2SA1245 TO SHIBA 2 SA 1245 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE Unit in mm HIGH FREQUENCY AM PLIFIER AND SWITCHING APPLICATIONS V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SA1245 SC-59

    TB-534

    Abstract: CA1389 98PL311 CA1589 R04350B
    Text: 4$>*=3 THIRD ANGLE PROJECTION REV OR A ECN No. M 123889 M 124525 REVISIONS DESCRIPTION DATE DR AUTH 08/18/09 MMG NEW RELEASE MODIFIED DRAWING, CHG. TB IN TITLE 09/22/09 MMG DJ DJ S U G G E S T E D M O U N T IN G C O N F IG U R A T IO N FOR C A 1 5 8 9 C A S E STYLE, ’’0 6 A M 0 1 ” PIN C O D E


    OCR Scan     		PDF M123889 M124525 CA1589 06AM01" R04350B TB-534+ 06AM01, CA1389, 98PL311 TB-534 CA1389 98PL311

    din 867

    Abstract: 842 ic 41585
    Text: 13 12 10 M A T E R IA L N O TES: 1. M A T E R IA L H O U S IN G : G L A S S F IL L E D 94V-0, 2. F IN IS H : S E L E C T G O LD SELEC T BO TH POW ER PLU G PLU G 2 PLUG 3 PLU G 4 PLUG T E R M IN A L S PRODUCT 5 SHEET PARTS PEG ARE H O LES M ATES M O LEX TO


    OCR Scan     		PDF SD-45984-100_ din 867 842 ic 41585

    "Power Diode" 200V 30A

    Abstract: RURD3010 RURD3015 RURD3020 RURD3040 diode 200v 30a 200V30A 200V 30A TRANSISTOR
    Text: H A RR IS S E M I C O N D SE CT OR RURD3010 RURD3015 RURD3020 HARRIS SbE D • IHAS 4 3 0 2 27 1 G G 4 2 4 1 2 1SD 30A Ultrafast Dual Diode With Soft Recovery Characteristic M ay 1991 TO-218AC TOP VIEW Ultrafast with Soft Recovery Characteristic trr < 45ns


    OCR Scan     		PDF GG42412 RURD3010, RURD3015, RURD3020 "Power Diode" 200V 30A RURD3010 RURD3015 RURD3040 diode 200v 30a 200V30A 200V 30A TRANSISTOR

    PD488170L

    Abstract: TB 1226 EN NEC RDRAM LN2117 NEC PD488170L
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD488170L 18M-BIT Rambus DRAM 1M-WORD X 9-BIT X 2-BANK D escription The 18-Megabit Rambus DRAM RDRAM™ is an extrem ely-high-speed CMOS DRAM organized as 2M w ords by 9 bits and capable of bursting up to 256 bytes o fd a ta a t2 n s p e r byte. The use o f Rambus S ignaling


    OCR Scan     		PDF uPD488170L 18M-BIT 18-Megabit PD488170L TB 1226 EN NEC RDRAM LN2117 NEC PD488170L

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA °rder Number ^AC10EP33/D Semiconductor Components M C10EP33 SO -8, D SUFFIX 8 - L E A D P L A S T IC S O IC P A C K A G E C A S E 7 5 1 -0 6 ORDERING INFORMATION W* / * , """ j S V iiW ^ .v j / I / •- ,v j V dA vi M C 10EP33D VÜ Product Preview


    OCR Scan     		PDF AC10EP33/D C10EP33 10EP33D 440ps MC10EP33/D

    Untitled

    Abstract: No abstract text available
    Text: 0rd6rNn ^ “ MOTOROLA Semiconductor Components M C10EP33 SO -8, D SUFFIX 8 - L E A D P L A S T IC S O IC P A C K A G E C A S E 751 ORDERING INFORMATION f*+ / * , t r - * * J s v ü w ' / F 1 * .v J ,v J / I vdA vj M C 10EP33D "• S O IC vü Product Preview


    OCR Scan     		PDF C10EP33 10EP33D 440ps MC10EP33/D

    14D241

    Abstract: Bt141 mz3 ptc 14d561 PCB Potentiometers RA 16Y thermistor MZ4 OS 430 NR, VARISTOR
    Text: Electrolytic Capacitors 1 Potentiometers. 21 Connectors 36 Intermediate Frequency Transformers.55 Varistors. 57 Thermistors 61


    OCR Scan     		PDF 045x022x8 I245F 032x018x6 14D241 Bt141 mz3 ptc 14d561 PCB Potentiometers RA 16Y thermistor MZ4 OS 430 NR, VARISTOR