IC338 Search Results

Nec concurrent rdram

Abstract: concurrent rdram NEC concurrent rdram CI 7424
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT |xPD488170 18M bit Rambus DRAM 1 Mword x 9bit x 2bank Description |J The 18-Megabit Rambus DRAM (RDRAM™) Is an extremely-high-speed CMOS DRAM organized a sJM w o r llb y 9 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus S igrgling L o 1 |l% |S L )

72PIN SO DIMM

Abstract: MC-42S4000LAB32S
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-42S4000LAB32S SERIES 4 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The MC-42S4000LAB32S series is a 4,194,304 words by 32 bits dynamic RAM module (Small Outline DIMM) on which 8 pieces of 16 M DRAM: µPD42S17800L are assembled.

Contextual Info: DATA SHEET NEC / M O S INTEGRATED CIRCUIT / MC-42S4000LAB32S SERIES 4 M-W ORD BY 32-BIT DYNAMIC RAM MODULE SO DIM M FAST PAGE MODE Description The M C -4 2S400 0LA B 32 S series is a 4,194,304 w ords by 32 bits dynam ic R A M m odule (Small Outline D IM M )

Contextual Info: Am25LS241 • Am54LS/74LS241 Am25LS244• Am54LS/74LS244 Octal Three-State Buffers DISTINCTIVE CHARACTERISTICS FUNCTIONAL DESCRIPTION • T h re e -s ta te o u tp u ts d riv e bus lines directly • H ysteresis at inputs im p ro v e noise m argin • PNP inputs red uce D.C. lo ad ing on bus lines

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 4 0 5 L , 4 2 1 6 4 0 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The //PD42S16405L, 4216405L are 4 194 304 words by 4 bits dynamic CMOS RAMs with optional hyper page

concurrent RDRAM 72

Abstract: NEC RDRAM NEC Rambus Direct RDRAM clock generator rdram clock generator HPD488170 UPD488170
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT |x P D 4 8 8 1 7 0 18M bit Rambus DRAM IMword X 9bit x 2bank D e s c rip tio n The 18-Megabit Rambus DRAM (RDRAM™) is an extremely-high-speed CMOS DRAM organized a s j j y 9 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling Lci(

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-42S4000LAB32S SERIES 4 M-W ORD BY 32-BIT DYNAMIC RAM MODULE SO D IM M FAST PAGE MODE Description The MC-42S4000LAB32S series is a 4,194,304 w ords by 32 bits dynam ic RAM m odule (Small Outline DIMM) on which 8 pieces of 16 M DRAM: /ÎPD42S17800L are assembled.

IC-3386

Abstract: KM 3502 P JPD4216805G5-60-7KD R0004E
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT m PD 4 2 16805 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE DESCRIPTION The /¿PD4216805 is a 2 097 152 words by 8 bits dynamic CMOS RAM with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.

IRS540

Abstract: MP 3389 IEI-1213 IRS540-1 RL 782 relay 1202 smd diode ic337 IEI-1207 RADEOn equlpment transistor
Contextual Info: DESCRIPTION The~rPAl6MlIcMor~allthicN-channel power in 8 circult# and Gate Protection Dio4e Thermal ryQ skI;l 4ffay )If#krrffl c@sigl)tlg [HI fb\#. f%#~v Head, and 8~ on. FEATURES Direct driving is poooible by standarq (4 V driving II) possible) * Output voltage: Vo = 30 V MAX.

4096x512x8

Abstract: upd4216805 TAA 310a
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿P D 4 2 1 6 8 0 5 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE DESCRIPTION The ^PD4216805 is a 2 097 152 w ords by 8 bits dynamic CMOS RAM w ith optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.

Contextual Info: D A T A SH EET NEC / M O S INTEGRATED CIRCU IT / MC-42S2000LAB32S SERIES 2 M -W O R D BY 32-BIT D Y N A M IC R A M M O D U LE SO D IM M FAST PAGE M O D E D escrip tion T h e M C -4 2 S 2 0 0 0 L A B 3 2 S se rie s is a 2,097,152 w o rd s by 32 bits d y n a m ic R A M m o d u le (Sm all O utline D IM M )