ICC11 Search Results

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1623BTE-C75/H 16M X 64 SDRAM DIMM, Unbuffered, based on 8M X 8, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1623BTE-C75/H is a 16M bit X 64 Synchronous Dynamic RAM high density memory

ICC1-100

Abstract: ICC150
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 02. Inactivate device type 01 (no approved source of supply). Add device types 03 through 07. Add vendors CAGE 32116, 5Y243, 57363, and 88379. Changed to reflect MIL-H-38534 processing. Editorial changes throughout.

Contextual Info: Ordering number : EN6497B Monolithic Digital IC High-Speed CD-ROM LB11975 Spindle Motor Driver IC Overview The LB11975 is a monolithic bipolar IC developed for uses as a spindle motor driver for high-speed CD-ROM and DVD-ROM drives. To minimize heat generation during high-speed rotation and braking, the LB11975 adopts direct PWM

LVT2952

Abstract: SN54LVT2952 SN74LVT2952
Contextual Info: SN54LVT2952, SN74LVT2952 3.3-V ABT OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS S CBS152C - MAY 1992 - REVISED FEBRUARY 1994 SN54LVT2952 . . . JT PACKAGE SN74LVT2952 . . . DB, DW, OR PW PACKAGE TOP VIEW State-of-the-Art Advanced BICMOS Technology (ABT) Design for 3.3-V

PEEL22V10AZ

Contextual Info: September 1994 Preliminary Commercial INC. TM . PEEL 22V10AZ -15/-25 CMOS Programmable Electrically Erasable Logic Device Features Ultra Low Power — Ice = 25p.A typical at standby — Icc = 3.5mA (typical) at 1MHz — tpD = 15ns and 25ns versions • Architectural Flexibility

Contextual Info: September 1994 Preliminary Commercial INC. PEEL 22CV8 -15/-25 CMOS Programmable Electrically Erasable Logic Device Features Low Power Alternative to Standard PLDs — Lower power than quarter-power PALs and GALs — 10mA typical/15mA maximum power CMOS Electrically Erasable Technology

PC437

Abstract: CU24063-Y1A PC860 DS-1552-0001-01 noritake itron CU24063
Contextual Info: RoHS 2002/95/EC Vacuum Fluorescent Display Module Specification Model: CU24063-Y1A Specification No: DS-1552-0001-01 Date of Issue: December 5, 2008 00 Revision: December 17, 2008 (01) Published by NORITAKE ITRON CORP. / Japan http://www.noritake-itron.jp

YL303H

Abstract: electric power saver circuits NORITAKE ITRON VFD MODULES 96 x 23 CU24043-Y100 PC858 font display vfd PC437 140CD Receipt font Noritake FONT TABLE
Contextual Info: RoHS 2002/95/EC Vacuum Fluorescent Display Module Specification Model: CU24043-Y100 Specification No: DS-1570-0001-00 Date of Issue: January 29, 2009 00 Revision: Published by NORITAKE ITRON CORP. / Japan http://www.noritake-itron.jp This specification is subject to change without prior notice.

7106

Abstract: fgs npn LB11823M
Contextual Info: Ordering number : ENN7106 Monolithic Digital IC LB11823M Direct PWM Drive Brushless Motor Predriver for OA Products Overview Package Dimensions The LB11823M is a direct PWM drive predriver IC for use with three-phase power brushless motors. The LB11823M can implement a motor drive circuit with the

Contextual Info: 8Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F800B5 MT28F008B5 5V Only, Dual Supply Smart 5 FEATURES • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks • Smart 5 technology (B5):

Contextual Info: 128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY MT28F200B1 FLASH MEMORY SMARTVOLTAGE FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks • SmartVoltage Technology (SVT):

Contextual Info: HM514170C Series HM51S4170C Series 262,144-word x 16-bit Dynamic Random Access Memory HITACHI Rev. 1.0 Jul. 21, 1995 Description The Hitachi HM51 S 4170C are CMOS dynamic RAM organized as 262,144-word x 16-bit. HM51(S)4170C have realized higher density, higher performance and various functions by employing 0.8 Jim CMOS process

Contextual Info: HM51W16160A Series HM51W18160A Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-217B Z Rev. 2.0 Jul. 2, 1996 Description The Hitachi HM51W16160A Series, HM51W18160A Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance

Contextual Info: HM5118165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-000 Z Preliminary Rev. 1.0 Dec. 1, 1995 Description The Hitachi HM5118165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118165B offers Extended

6AL7

Abstract: Nippon capacitors
Contextual Info: HB56UW865DB Series 8388608-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-665A Z Rev. 1.0 May 20, 1997 Description The HB56UW865DB Series is a 8 M x 64 Dynamic RAM Small Outline Dual In-line Memory Module (S. O. DIMM), mounted 8 pieces of 64-Mbit DRAM (HM5165805 ATT/ALTT) sealed in TSOP package and 1

Hitachi DSA00164

Abstract: HM5165805TT5
Contextual Info: HM5164805 Series HM5165805 Series 64 M EDO DRAM 8-Mword x 8-bit 8 k Refresh/4 k Refresh ADE-203-808B (Z) Rev. 1.0 Feb. 27, 1998 Description The Hitachi HM5164805 Series, HM5165805 Series are 64M-bit dynamic RAMs organized as 8,388,608word × 8-bit. They have realized high performance and low power by employing CMOS process

CC1H2,5

Abstract: SAF-C509-LM CMH1.5 icc17 80C517A CC1H4 SAB-C509-LM 80C517 CT1F CT1R
Contextual Info: Microcomputer Components 8-Bit CMOS Microcontroller C509-L Data Sheet 09.96 C509-L 8-Bit CMOS Microcontroller C509-L Advance Information • • • • • • • • • • • • • Full upward compatibility with SAB 80C517/80C517A and 8051/C501 microcontrollers

Contextual Info: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks

Contextual Info: HM5164405A Series HM5165405A Series 64M EDO DRAM 16-Mword x 4-bit 8k refresh/4k refresh HITACHI ADE-203-459B (Z) Rev. 2.0 Oct. 28, 1997 Description The Hitachi HM5164405A Seiies, HM5165405A Series are CMOS dynamic RAMs organized 16,777,216word X 4-bit. They employ the most advanced CMOS technology for high performance and low power.

CT1F

Abstract: smd transistor c009 8051-UART smd diode s6 43a smd transistor c006 PLM51 SAB-C500 CC1H4 SAB-C509 tx c509
Contextual Info: C509-L ht User's Manual 11.97 tp :/ Se /ww m w ic .s on ie du me ct ns or .d / e/ 8-Bit CMOS Microcontroller C509-L Data Sheet Revision History : 11.97 Previous Releases : 06.96 Original Version Page (new version) Page (prev. Subjects (changes since last revision)

Hitachi DSA0088

Abstract: HM51 HM51W4800C
Contextual Info: HM51W4800A/AL Series HM51W4800C/CL Series 524,288-word x 8-bit Dynamic Random Access Memory The Hitachi HM51W4800A/AL, HM51W4800C/ CL are CMOS dynamic RAM organized as 524,288-word x 8-bit. HM51W4800A/AL have realized higher density, higher performance and

Contextual Info: ADVANCE .1 MT28LF400 256K x 16, 512K x 8 FLASH MEMORY MICRON •- OUAMTUU o c v tc s a . INC 256K x 16, 512K x 8 3.3V/12V, BOOT BLOCK FEATURES • Seven erase blocks: - 16K B /8K -w ord boot block protected - T w o 8K B/ 4K -w ord param eter blocks - Four general m em ory blocks

Contextual Info: ADVANCE M IC R O N 1 MT28SF200 128K x 16, 256K x 8 FLASH MEMORY FLASH MEMORY 128K x 16,256K x 8 — FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks • Deep Power-Down Mode: 8|_iA at 5V Vcc; 2|iA at

Contextual Info: PRELIMINARY 512K x 16, 1 MEG x 8 BOOT BLOCK FLASH MEMORY M IC R O N FLASH MEMORY MT28F800B1 martV o ltag e FEATURES • Eleven erase blocks: 16KB/8K-word boot block (protected Two 8KB/4K-word parameter blocks Eight main memory blocks • SmartVoltage Technology (SVT):