ICC1S Search Results

Contextual Info: 2ch Digital isolator Isolation voltage 2500 Vrms High Speed Isolator BM67220FV-C ●Description The BM67220FV-C is a high-speed isolator IC used in electric vehicles and hybrid vehicles. This IC features dielectric strength of 2500 Vrms between I/O and the

ICC1-100

Abstract: ICC150
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 02. Inactivate device type 01 (no approved source of supply). Add device types 03 through 07. Add vendors CAGE 32116, 5Y243, 57363, and 88379. Changed to reflect MIL-H-38534 processing. Editorial changes throughout.

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

GP2W0001YP

Abstract: GP2W0002YP 8742H
Contextual Info: GP2W0001YP/GP2W0002YP GP2W0001YP/ GP2W0002YP • Features 1. Compliant with IrDA1.0 Compliant with IrDA1.2 low power 2. Integrated package of transmitter/receiver. 8.7x4.2×height 3.15 mm [GP2W0001YP] 3. General purpose 4. Low dissipation current due to shut-down function

Contextual Info: Document No.: FT_000061 FT2232H DUAL HIGH SPEED USB TO MULTIPURPOSE UART/FIFO IC Datasheet Version 2.08 Clearance No.: FTDI#77 Future Technology Devices International Ltd FT2232H Dual High Speed USB to Multipurpose UART/FIFO IC The FT2232H is FTDI‟s 5th generation of USB

MB89160

Abstract: MB89163L MB89165L MB89P165 FPT-80P-M05
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET 8-bit Proprietary Microcontroller CMOS F2MC-8L MB89160L Series MB89163L/165L/P165/W165/PV160 • DESCRIPTION The MB89160L series is a line of the general-purpose, single-chip microcontrollers. In addition to a compact instruction set, the microcontrollers contain a variety of peripheral functions such as an LCD controller/driver,

4kw marking

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50308-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 8M (×16) STATIC RAM MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V

SA70

Abstract: 2SA31
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES

M420000000

Abstract: FSB073 3FE00
Contextual Info: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector

BGA-56P-M01

Abstract: DS05-50216-1E
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50216-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8/×16) FLASH MEMORY & 2M (× 8/×16) STATIC RAM MB84VD2108XEA-70/85/MB84VD2109XEA-70/85 • FEATURES • Power Supply Voltage of 2.7 to 3.3 V

diode G4010

Abstract: ds1302 circuit real time clock Register definitio super cap 5.5v ds1302 block diagram ds1302 circuit ds1302 circuit diagram G4010 DS1202 DS1302 DS1302S
Contextual Info: DS1302 DS1302 Trickle Charge Timekeeping Chip FEATURES PIN ASSIGNMENT • Real time clock counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap year compensation valid up to 2100 • 31 x 8 RAM for scratchpad data storage

SA70

Abstract: 18FFFFH
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V

cmos static ram 1mx8 5v

Contextual Info: K5P6480YCM - T085 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8 Nand Flash Memory / 8M Bit (1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 19th 2000 Advanced Information 0.1 -Changed Operating Voltage from 2.4V - 3.0V to 2.7V - 3.3V

MB81116420

Contextual Info: July 1994 Edition 4.0 FUJITSU DATA SHEET MB81116820-010/-012/-015 CMOS 2 X 1 M X 8 SYNCHRONOUS DRAM CMOS 2 BANKS OF 1,048,576-WORDS x 8-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB81116820 is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing 16,777,216 memory cells accessible in an 8-bit format. The

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE4.1E MEMORY CMOS 4 x 1 M × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642D-75/-102/-102L CMOS 4-Bank × 1,048,576-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642D is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

BGA-101P-M01

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM

DL322

Abstract: DL323 DL324
Contextual Info: PRELIMINARY Am41DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features

SA70

Abstract: 22a17
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50207-4E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 8M (× 8/×16) STATIC RAM MB84VD2228XEA/EE-85 MB84VD2229XEA/EE-85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V

Contextual Info: - PRELIMINARYJuly 1996 Edition 1.0 _ _ PRODUCT PROFILE SHEET : MB811171622A-125/-100/-84/-67 F U J IT S U [2K Refresh] CMOS 2 x 512Kx 16 SYNCHRONOUS DRAM CMOS 2 BANKS OF 524,288-WORDS x 16-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB811171622A is a CMOS Synchronous Dynamic Random Access Memory

M5M4V4S40CTP-12

Contextual Info: MITSUBISHI LSIs SDRAM Rev. 0.3 M5M4V4S40CTP-12, -15 Feb ‘97 Preliminary 4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM PRELIMINARY Some of contents are described for general products and are subject to change without notice. DESCRIPTION FEATURES - Single 3.3v±0.3v power supply

MB81117822A-XXXFN

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11022-2E MEMORY CMOS 2 x 1M × 8 BITS SYNCHRONOUS DYNAMIC RAM MB81117822A-125/-100/-84/-67 CMOS 2 Banks of 1,048,576-WORDS × 8 BITS Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81117822A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11024-2E MEMORY CMOS 2 x 512 K × 16 BIT SYNCHRONOUS DYNAMIC RAM MB811171622A-125/-100/-84/-67 CMOS 2-BANK 524,288-WORD × 16 BIT Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB811171622A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11025-3E MEMORY CMOS 4 x 4 M × 4 BIT SYNCHRONOUS DYNAMIC RAM MB81164442A-100/-84/-67/-100L/-84L/-67L CMOS 4-Bank × 4,194,304-Word × 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION

MB8504S064AE

Abstract: MB8504S064AE-100 MDS-144P-P08
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11123-1E MEMORY Un-buffered 4 M x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM MB8504S064AE-100/-84/-67/-100L/-84L/-67L 144-pin, 2 Clock, 1-bank, based on 4 M × 16 Bit SDRAMs with SPD • DESCRIPTION