ICE10N60FP Search Results
ICE10N60FP Datasheets Context Search
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Contextual Info: Product Summary ICE10N60FP N-Channel Enhancement Mode MOSFET TA = 25°C 10A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.28Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability |
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ICE10N60FP 250uA O-220 100us 0E-06 0E-02 0E-04 0E-00 |