ID 2 136 079 Search Results

a7906

Abstract: I99S
Contextual Info: GROUNDING C L IP .8 5 9 1 .0 » I 11.5010.031 nt Ï •2 6 0 n 6 .6 ß i_ ■023 10.74) .171 (4.3 4) 151 J .4 0 8 (1 0 .3 6 ) .2 0 1 3 .0 0 2 (5 .1 0 1 0 .0 5 ) (NOTE 3) _ N O T ES : S E E SH E E T 4 & 5 FOR CH A R TED DIM ENSIO NS AND P A R T N UM BERS.

hax 486

Abstract: R30EF18A 14S0A sbc 486
Contextual Info: DEE D I 4055452 □007c]flLl □ IO R 02E 07984 D T " - £ 3 - «2 3 Data Sheet No. PD-2.118 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER o R30EF SERIES 2000-1800 VOLTS RANGE REVERSE RECOVERY TIME 2.0//S 465 AMP AVG HOCKEY PUK SOFT FAST RECOVERY RECTIFIER DIODES

IXFN34N80

Contextual Info: IXFK 34N80 IXFX 34N80 HiPerFET TM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = 800 V = 34 A = 0.24 W trr £ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

Contextual Info: HiPerFETTM Power MOSFETs IXFK 34N80 IXFX 34N80 VDSS ID25 RDS on Single MOSFET Die = 800 V = 34 A = 0.24 W trr £ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW

34N80

Abstract: IXFN34N80 ixfx34n80
Contextual Info: HiPerFETTM Power MOSFETs IXFK 34N80 IXFX 34N80 VDSS ID25 RDS on Single MOSFET Die = 800 V = 34 A = 0.24 W trr £ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW

Contextual Info: HiPerFETTM Power MOSFETs IXFK 34N80 IXFX 34N80 VDSS ID25 RDS on Single MOSFET Die = 800 V = 34 A = 0.24 Ω trr ≤ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

sl2 357

Contextual Info: D A TA S H EE T GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.5 dB TYP. @ f = 12 GHz • Gate Length: Lg = 0.8 /urn recessed gate • Gate W idth: Wg = 330 /urn • 4 pins super mini mold

g2ns

Abstract: C10535E NE72118 NE72118-T1 NE72118-T2 NEC k 2134 812 421
Contextual Info: DATA DATASHEET SHEET GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: GS = 5.5 dB TYP. @f = 12 GHz • Gate Length: Lg = 0.8 mm recessed gate • Gate Width: Wg = 330 mm • 4 pins super mini mold

sem 2105 16 pin

Abstract: sem 2105
Contextual Info: DATA SH E E T GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES High Power Gain: Gs = 5.5 dB TYP. @ f = 12 GHz Gate Length: Lg = 0.8 jum recessed gate Gate Width: Wg = 330 fjm 4 pins super mini mold Tape & reel packaging only available

OZ 9640

Abstract: YPN006-021 AE-03 KA HYPERTRONICS YSK006-011AH hypertronics ka series
Contextual Info: Hypertronics Catalog sec 3 5/1/06 10:14 AM Page 19 KA SERIES 4 & 5 Row 4 & 5 ROW P.C. BOARD CONNECTORS 48, 68, 80, 96, 100, 108, 120, 125, 128, 136, 140, 160, 184, 196, 200, 208, 228, 230, 240, 264, 300, 320, 330, 352, 390, 392 & 490 CONTACTS FOR PHOTO DO NOT PRINT BOX!

ae gp 738

Abstract: YSK006-011AH KA HYPERTRONICS MS3198-1 DEM1.0060 YSK006-010AH MS3198 hypertronics ka series 092AH
Contextual Info: KA SERIES 4 & 5 Row 4 & 5 ROW P.C. BOARD CONNECTORS 48, 68, 80, 96, 100, 108, 120, 125, 128, 136, 140, 160, 184, 196, 200, 208, 228, 230, 240, 264, 300, 320, 330, 352, 390, 392 & 490 CONTACTS FOR PHOTO DO NOT PRINT BOX! 4 row and 5 row connectors. .100” 2.54mm x .100” (2.54mm) grid spacing.

YSK006-011AH

Abstract: 550063 YPN006-021 020AH MS3198 KA HYPERTRONICS
Contextual Info: KA SERIES 4 & 5 Row 4 & 5 ROW P.C. BOARD CONNECTORS 48, 68, 80, 96, 100, 108, 120, 125, 128, 136, 140, 160, 184, 196, 200, 208, 228, 230, 240, 264, 300, 320, 330, 352, 390, 392 & 490 CONTACTS FOR PHOTO DO NOT PRINT BOX! 4 row and 5 row connectors. .100” 2.54mm x .100” (2.54mm) grid spacing.

YSK006-011AH

Abstract: hypertac connector insertion tools YSK006-009 hypertronics ka series YSK006-010AH YPN006-019 YSK006 MS3198 YPN006-036 YSK006-029AH
Contextual Info: KA SERIES TYPICAL APPLICATIONS Besides the standard daughter to mother board combination, the KA Series offers alternate combinations for each unique application. Some of the most popular are shown below. However, many other possibilities can be accommodated, such as extender cards, p.c. boards to Wire Wrap back planes, piggy-backing, etc.

Contextual Info: REVISION B DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] Pb THIS PRODUCT MANUFACTURED WITH LEAD-FREE PROCESSING SSMB-P-C-XX-ST-CA1 TERMINATION -CA1: RG316U/RG174U CABLE GENDER -P: PLUG DO NOT SCALE FROM THIS PRINT ORIENTATION -ST: STRAIGHT TYPE -C: CABLE B

LK A W01

Contextual Info: RGB640 11.0 Pin Descriptions 11.1 Summary Description Number Video Reference Clock Input 1 External Video Clock Input 2 Auxiliary Reference Clock Input 1 Auxiliary PLL Output Clock Output 1 Divided Dot Clock Output 1 Serial Clock Output 1 Load Clock Input

Contextual Info: 1 2 4 3 RoHS COMPLIANT * * 2556 S e rie s * * * MATERIAL : ORDERING INFORMATION * INSULATOR : PBT+30%G.F UL94V-0 * CONTACT : BRASS L»» 1 2 3 1. NO. OF CIRCUITS 2556 P * * 2. PLATING : T = TIN PLATED 120u” OVER 3 0 ~ 5 0 u ” NICKEL OVERALL U = GOLD FLASH OVER 3 0 ~ 5 0 u ”

NE800495-4

Abstract: NE8004 NE800495-5 NE800495-7
Contextual Info: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES N E 800495-X S 2i>vs FR E Q U E N C Y CLASS A OPERATION HIGH EFFICIENCY: t ia d d £ 35% TYP BROADBAND CAPABILITY AVAILABILITY: C hip H e rm e tic P a c k a g e CD T3 PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES

WC03

Abstract: wb03 IX151
Contextual Info: RGB640 2.0 Serializer T he s e ria liz e r is loaded w ith m u ltip le p ixels a t th e ris in g edge o f th e load clock. The p ixels are th e n serialized in te rn a lly to produce one pixel fo r each video clock cycle. T he RG B640 fe a tu re s a pro g ra m m a b le s e ria liz e r capa­

ne8004 FET

Abstract: ne800495-6 NE800495 NE8004 ne0800 NE8004956
Contextual Info: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES NE800495-X S2HVS FREQUENCY CLASS A OPERATION HIGH EFFICIENCY: t]A D D ;> 35% TYP BROADBAND CAPABILITY AVAILABILITY: Chip Hermetic Package m •o PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES CO PROVEN RELIABILITY

Contextual Info: Introduction This manual describes the architecture o f the IQ family o f integrated circuit chips, which includes the IQ320, IQ240B, IQ160, IQ128B, IQ96, IQ64B, IQ48, and IQ32B part types. Each IQ device implements a non-blocking switch matrix. Each signal line in

IQ160

Abstract: IDS200 TLR 308 IQ128B IQ240B IQ320 IQ32B IQ48 IQ64B IQ96
Contextual Info: Introduction This manual describes the architecture o f the IQ family of integrated circuit chips, which includes the IQ320, IQ240B, IQ160, IQ128B, IQ96, IQ64B, IQ48, and IQ32B part types. Each IQ device implements a non-blocking switch matrix. Each signal line in

NEC 2561

Abstract: nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049
Contextual Info: PRELIMINARY DATA SHEET_ NEC GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 yum recessed gate • Gate Width : Wg = 400 ym

uc 3808

Abstract: C10535E NE72118 NE72118-T1 NE72118-T2 k 2134 nec od6000
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: Introduction This manual provides the information needed to configure the IQX Family devices using the JTAG interface. It is intended for users who plan to write their own code to configure the IQX devices. In addition, this manual explains how the boundary scan features implemented in the IQX devices can be used