IDG 1050 Search Results

Contextual Info: Catalog 1242163 Smart Card Connectors Revised 2-99 Smart Card Connector, Panel Mount, IDG Termination, With Ribbon Cable Card Detection Switch: Normally Closed Switch Style: Unsealed Performance Characteristics Current Rating: Signal in class A 100 mA and

FLM0910-4C

Abstract: FLM0910
Contextual Info: FLM0910-4C Fuffrsu Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 36dBm Typ. • High Gain: G -j^B = 7.5dB (Typ.) • High PAE: r iadd = 30% (Typ.) • Broad Band: 9.5 ~ 10.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed

FLM1011-4C

Abstract: Fujitsu FLM 150 1011-4C
Contextual Info: nm-rcii FLM1011-4C r U JI1bU Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 35.5dBm Typ. • • • • • High Gain: G-j^B = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: FLM1011-8C ff rU Internally Matched Power GaAs FETs J1 1j U FEATURES • • • • • • High Output Power: P-idg = 38.5dBm Typ. High Gain: G-j^B = 5.0dB (Typ.) High PAE: riadd = 22% (Typ.) Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Q

37MT3

Contextual Info: FLM1011-6F Fuffrsu Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 37.5dBm Typ. • High Gain: G -j^B = 7.5dB (Typ.) • High PAE: r iadd = 28% (Typ.) • Low IM3 = -45dBc@Po = 25dBm • Broad Band: 10.7 ~ 11.7GHz • Impedance Matched Zin/Zout = 50Q

Contextual Info: EUPEC SBE D 3m]32*i7 ÜQQüSn IDG « U P E C T 600 F • ^ Z S -v Z 600 Typenreihe/Type range 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values 600.1300 V 600. 1300 V V drm Vrrm

GaAs FETs

Abstract: FLM1011-4D
Contextual Info: m n-rai FLM1011-4D Internally Matched Power GaAs FETs rU JI Ij U FEATURES • High Output Power: P-idg = 35.5dBm Typ. • • • • • • High Gain: G-j^B = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz

FLM0910-8C

Abstract: i80m
Contextual Info: FLM0910-8C Fuffrsu Internally M a tc h e d P o w e r G a A s F E T s FEATURES • • • • • High Output Power: P-idg = 38.5dBm Typ. High Gain: G-j^B = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Q

FLM0910-2

Contextual Info: FLM0910-2 Fuffrsu Internally M a tc h e d P o w e r G aA s F E T s FEATURES • High Output Power: P-idg = 33.5dBm Typ. • High Gain: G -j^B = 7.5dB (Typ.) • High PAE: riadd = 31% (Typ.) • Broad Band: 9.5 ~ 10.5GHz • Impedance Matched Zin/Zout = 50Q

FLM1011-2

Contextual Info: F L M lO ll-2 Fuffrsu Internally M a tc h e d P o w e r G a A s F E T s FEATURES • • • • • High Output Power: P-idg = 33.5dBm Typ. High Gain: G-j^B = 6.0dB (Typ.) High PAE: riadd = 28% (Typ.) Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Q

IC Data-book

Abstract: cs 16-12
Contextual Info: m n-rai rUJI I j U FLM1011-12F Internally M a tc h e d P o w e r G a A s F E T s FEATURES • High Output Power: P-idg = 40.5dBm Typ. • High Gain: G-j^B = 6.0dB (Typ.) • High PAE: r iadd = 25% (Typ.) • Low IM3 = -45dBc@Po = 29.5dBm • Broad Band: 10.7 ~ 11.7GHz

FLM1011-8D

Contextual Info: FLM1011-8D F im T Ç II r U J I 1j U Internally M a tc h e d P o w e r G a A s F E T s FEATURES • High Output Power: P-idg = 38.5dBm Typ. • High Gain: G-j^B = 5.0dB (Typ.) • High PAE: r iadd = 22% (Typ.) • Low IM 3 = -45dBc@Po = 28dBm • Broad Band: 10.7 ~ 11.7GHz

AIRPAX IEG

Abstract: iug airpax iugn airpax military relay Airpax circuit breaker 1 pole 6 amp 3020 h3 UL1077 cegh
Contextual Info: Single Pole Circuit Breakers Multi-Pole Circuit Breakers IAGX/IUGX/IEGX/CEGX/ IAGZX/IUGZX/IEGZX/CEGZX Breakers IAGBX/IUGBX/IEGBX/CEGBX Breakers IAGN/IUGN Breakers 107 108 110 111 112 IEGS/CEGS/IEGHS/CEGHS Snap-In Circuit Breakers 113 Configurations 115 Operating Characteristics

168 523.24

Abstract: AM144MX-TF 4-9094
Contextual Info: Plastic Packaged GaAs Power FET AM144MX-TF DATASHEET V. 1, November, 1999 DESCRIPTION AMCOM's AM144MX-TF is part of the TF Series of GaAs MESFETs. This part has a total gate width of 14.4 mm. The AM144MX-TF is designed for high power microwave applications, operating up to 8 GHz.

MXM 3 CONNECTOR

Abstract: MXM CONNECTOR AVR IC lan AVR AVR LCD AVR-M1608C120MT2AB AVR 200 AVR-M1608C120MT6AB AVRM1005C6R8NT101N ess-630a
Contextual Info: P r o d u c t U p d a t e p i l e u m -m tm Zinc-Oxide-Praseodymium based Multilayer Chip Varistors A V R -M , A V R L , A V F 1 6 ^ « MSRoHSffi^ EU Directive 2002/95/EC, «¡EttSfell$ïKtffflÊÎ]\ *ffiffl» .» .^ A « H » ,È U a # S a *iS ?!lffl* tfflK l* * *(P B B iP )ie i^ a iE « l(P B D E ).

089f

Abstract: 6K-24V s251c bp1201 F304 JY682 6K240
Contextual Info: Energy Efficient Direct Incandescent Replacement 525nm Super Green Based LEDs Options Features • M aintenance Free, Easy Installation • Low Power, High Intensity •W a r m & Incandescent W hite Available • Long Life 10 0 ,0 0 0 + hrs 1 0 Years • M ajor Power Savings

mda 2060

Abstract: um 100031 development trends in car manufacture mechanical engineering project Samsung svs 460GX Ansys led
Contextual Info: Itanium-Based Solutions in the Manufacturing Market Analysts: Kara M. Yokley, Earl Joseph II, Ph.D., and Christopher G. Willard, Ph.D. The Manufacturing Market The manufacturing market comprises some of the most demanding users of computers in the world. Continuous improvement in innovation rates and time-to-market, product quality, and cost reduction are

NCP6360 D

Contextual Info: NCP6360 Mini Buck Converter for RF Power Amplifiers The NCP6360, a PWM synchronous step−down DC−to−DC converter, is optimized for supplying RF Power Amplifiers PAs used into 3G/4G wireless systems (Mobile/ Smart Phones, Phablets, Tablets, .) powered by single−cell Lithium−Ion batteries. The device

Contextual Info: NCP6361 Buck Converter with Bypass Mode for RF Power Amplifiers The NCP6361, a PWM synchronous step−down DC−to−DC converter, is optimized for supplying RF Power Amplifiers PAs used into 3G/4G wireless systems (Mobile / Smart Phones, Tablets, …) powered by single−cell Lithium−Ion batteries. The device is able to

NCP6361 D

Contextual Info: NCP6361 Buck Converter with Bypass Mode for RF Power Amplifiers The NCP6361, a PWM synchronous step−down DC−to−DC converter, is optimized for supplying RF Power Amplifiers PAs used in 3G/4G wireless systems (Mobile / Smart Phones, Tablets,…) powered by single−cell Lithium−Ion batteries. The device is able to

Contextual Info: NCP6361 Buck Converter with Bypass Mode for RF Power Amplifiers The NCP6361, a PWM synchronous step−down DC−to−DC converter, is optimized for supplying RF Power Amplifiers PAs used into 3G/4G wireless systems (Mobile / Smart Phones, Tablets, …) powered by single−cell Lithium−Ion batteries. The device is able to

2S54

Abstract: 2s80 program 2s56
Contextual Info: ANALOG DEVICES FEA T U R E S Direct Conversion of LV D T and R V D T Outputs into Digital Format Ratiometric Conversion for Extremely High Stability High Resolution 14-16 Bit Parallel Digital Output User Definable Input Gain Quadrature Rejection Operation Over 360 Hz to 11 kHz Frequency Range

NCP6915 D

Contextual Info: NCP6915 6 Channels PMIC with One DCDC Converter and 5 LDOs The NCP6915 integrated circuit is part of the ON Semiconductor mini power management IC family. It is optimized to supply battery powered portable application sub−systems such as camera function,

Contextual Info: NCP6915 6 Channels PMIC with One DCDC Converter and 5 LDOs The NCP6915 integrated circuit is part of the ON Semiconductor mini power management IC family. It is optimized to supply battery powered portable application sub−systems such as camera function,