IDT74ALVC10 Search Results
IDT74ALVC10 Price and Stock
Rochester Electronics LLC IDT74ALVC10AMPGIC GATE NAND TRPL 3-INP |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IDT74ALVC10AMPG | Bulk | 4,216 | 993 |
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Integrated Device Technology Inc IDT74ALVC10AMPGIDT74ALVC10AMPG |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IDT74ALVC10AMPG | 4,216 | 1,244 |
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IDT74ALVC10AMPG | 4,216 | 1 |
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IDT74ALVC10 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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IDT74ALVC10DC | Integrated Device Technology | 3.3V CMOS Triple 3-Input Positive-NAND Gate | Original | 98.37KB | 5 | |||
IDT74ALVC10PG | Integrated Device Technology | 3.3V CMOS Triple 3-Input Positive-NAND Gate | Original | 98.37KB | 5 | |||
IDT74ALVC10PY | Integrated Device Technology | 3.3V CMOS TRIPLE 3-INPUT POSITIVE-NAND GATE | Original | 98.36KB | 5 |
IDT74ALVC10 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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"NAND Gate"
Abstract: 3 input nand gate data sheet 4634
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IDT74ALVC10 ALVC10 MIL-STD-883, 200pF, O14-2) SO14-3) "NAND Gate" 3 input nand gate data sheet 4634 | |
Contextual Info: R IDT74ALVC10 ADVANCE INFORMATION 3.3V CMOS TRIPLE 3-INPUT POSITIVE-NANDGATE _ irr I i D E S C R IP T IO N : FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 - 1,27mm pitch SOIC, 0.65mm pitch SSOP and |
OCR Scan |
IDT74ALVC10 MIL-STD-883, 200pF, ALVC10: | |
4634
Abstract: IDT74ALVC10
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IDT74ALVC10 ALVC10 MIL-STD-883, 200pF, SO14-1) SO14-2) SO14-3) 4634 IDT74ALVC10 | |
Contextual Info: IDT74ALVC10 3.3V CMOS TRIPLE 3-INPUT POSITIVE-NAND GATE INDUSTRIAL TEMPERATURE RANGE IDT74ALVC10 3.3V CMOS TRIPLE 3-INPUT POSITIVE-NAND GATE DESCRIPTION: FEATURES: This triple 3-input positive-NAND gate is built using advanced dual metal CMOS technology. The ALVC10 performs the Boolean function Y = A • B |
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IDT74ALVC10 IDT74ALVC10 MIL-STD-883, 200pF, | |
Contextual Info: 3.3V CMOS TRIPLE 3-INPUT POSITIVE-NAND GATE DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 1,27mm pitch SOIC, 0.65mm pitch SSOP and 0.65mm pitch TSSOP packages Extended commercial range of - 4 0 ° C to +85°C |
OCR Scan |
MIL-STD-883, 200pF, ALVC10 IDT74ALVC10 | |
Contextual Info: 3.3V CMOS TRIPLE 3-INPUT POSITIVE-NAND GATE DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 1.27mm pitch SOIC, 0.65mm pitch SSOP and 0.65mm pitch TSSOP packages Extended commercial range of - 40°C to +85°C |
OCR Scan |
IDT74ALVC10 MIL-STD-883, 200pF, ALVC10 | |
philips diode PH 33J
Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
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10-BIT QS3L384) QS3L2384 QS3L384 QS3L2384 philips diode PH 33J UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY | |
UM61256FK-15
Abstract: YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624
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74F257, 74FCT257, 74FCT257T QS32257 QS3257 QS32257 UM61256FK-15 YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624 |