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    IE 49 TRANSISTOR Search Results

    IE 49 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    IE 49 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCW89R

    Abstract: BCW89 DSA003674
    Text: SOT23 PNP PLANAR SMALL SIGNAL TRANSISTORS BCW89 ISSUE 2 – FEBRUARY 1995 PARTMARKING DETAILS – DIM E C B Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059


    Original     		PDF BCW89 BCW89R -10mA, -50mA, 35MHz 200Hz BCW89R BCW89 DSA003674

    BCW70R

    Abstract: BCW69R BCW69 BCW70 720 sot23 DSA003673
    Text: SOT23 PNP PLANAR SMALL SIGNAL TRANSISTORS BCW69 BCW70 BCW69 BCW70 ISSUE 2 – FEBRUARY 1995 PARTMARKING DETAILS – DIM E C B Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085


    Original     		PDF BCW69 BCW70 BCW69R BCW70R -10mA, -50mA, BCW70R BCW69R BCW69 BCW70 720 sot23 DSA003673

    Q62702-C2136

    Abstract: Q62702-C2137
    Text: NPN Silicon Darlington Transistors BCP 29 BCP 49 For general AF applications ● High collector current ● High current gain ● Complementary types: BCP 28/48 PNP ● Type Marking Ordering Code (tape and reel) BCP 29 BCP 49 BCP 29 BCP 49 Q62702-C2136 Q62702-C2137


    Original     		PDF Q62702-C2136 Q62702-C2137 OT-223 Q62702-C2136 Q62702-C2137

    Untitled

    Abstract: No abstract text available
    Text: BCP 29, BCP 49 Darlington Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung ±0.2 6.5 ±0.1 3 1.65 2.3 2 ±0.2 3.5 ±0.3 7 0.7 1.5 W Plastic case


    Original     		PDF OT-223 UL94V-0

    VPS05163

    Abstract: No abstract text available
    Text: BCP 29, BCP 49 NPN Silicon Darlington Transistors • For general AF applications 4 • High collector current • High current gain • Complementary types: BCP 28/48 PNP 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00009 Type Marking Pin Configuration Package BCP 29


    Original     		PDF VPS05163 EHA00009 OT-223 EHP00255 EHP00256 EHP00257 EHP00258 Oct-20-1999 VPS05163

    marking BCV

    Abstract: bcv 49
    Text: BCV 29, BCV 49 NPN Silicon Darlington Transistors 1 • For general AF applications 2 • High collector current 3 • High current gain • Complementary types: BCV 28, BCV 48 PNP 2 VPS05162 Type Marking Pin Configuration Package BCV 29 EF 1=B 2=C 3=E 4=C


    Original     		PDF VPS05162 OT-89 EHP00322 EHP00323 EHP00324 EHP00325 Sep-30-1999 marking BCV bcv 49

    EHA00009

    Abstract: BCP29 BCP49 VPS05163
    Text: BCP29, BCP49 NPN Silicon Darlington Transistors  For general AF applications 4  High collector current  High current gain  Complementary types: BCP28/48 PNP 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00009 Type Marking Pin Configuration Package BCP29 BCP 29


    Original     		PDF BCP29, BCP49 BCP28/48 VPS05163 EHA00009 BCP29 OT223 EHA00009 BCP29 BCP49 VPS05163

    BCP29

    Abstract: BCP49 VPS05163
    Text: BCP29, BCP49 NPN Silicon Darlington Transistors  For general AF applications 4  High collector current  High current gain  Complementary types: BCP28/48 PNP 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00009 Type Marking Pin Configuration Package BCP29 BCP 29


    Original     		PDF BCP29, BCP49 BCP28/48 VPS05163 EHA00009 BCP29 OT223 BCP29 BCP49 VPS05163

    Untitled

    Abstract: No abstract text available
    Text: BCP29, BCP49 NPN Silicon Darlington Transistors  For general AF applications 4  High collector current  High current gain  Complementary types: BCP28/48 PNP 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00009 Type Marking Pin Configuration Package BCP29 BCP 29


    Original     		PDF BCP29, BCP49 BCP28/48 VPS05163 EHA00009 BCP29 OT223 OT223

    BCV49

    Abstract: BCV28 BCV29 BCV48
    Text: BCV29, BCV49 NPN Silicon Darlington Transistors 1  For general AF applications 2  High collector current 3  High current gain  Complementary types: BCV28, BCV48 PNP 2 VPS05162 Type Marking Pin Configuration Package BCV29 EF 1=B 2=C 3=E 4=C SOT89 BCV49


    Original     		PDF BCV29, BCV49 BCV28, BCV48 VPS05162 BCV29 EHP00322 BCV49 BCV28 BCV29 BCV48

    BCV48

    Abstract: bcv49 npn darlington BCV28 BCV29 BCV49
    Text: BCV29, BCV49 NPN Silicon Darlington Transistors • For general AF applications 1 2 • High collector current 3 2 • High current gain • Complementary types: BCV28, BCV48 PNP • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type


    Original     		PDF BCV29, BCV49 BCV28, BCV48 BCV29 BCV48 bcv49 npn darlington BCV28 BCV29 BCV49

    Untitled

    Abstract: No abstract text available
    Text: BCV29, BCV49 NPN Silicon Darlington Transistors • For general AF applications 1 • High collector current 2 3 • High current gain 2 • Complementary types: BCV28, BCV48 PNP Type Marking Pin Configuration Package BCV29 EF 1=B 2=C 3=E SOT89 BCV49 EG


    Original     		PDF BCV29, BCV49 BCV28, BCV48 BCV29 BCV49

    BCV48

    Abstract: BCV29
    Text: BCV29, BCV49 NPN Silicon Darlington Transistors • For general AF applications 1 2 • High collector current 3 2 • High current gain • Complementary types: BCV28, BCV48 PNP • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type


    Original     		PDF BCV29, BCV49 BCV28, BCV48 BCV29 BCV49 BCV48

    ic 4446

    Abstract: ZUMT591 SOT323 2222 transistor b 622
    Text: SOT323 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ZUMT591 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . PARAMETER SYMBOL MIN. Static Forward Current Transfer Ratio hFE 100 100 80 15 Transition Frequency fT Ouput Capacitance Cobo TYP. MAX. UNIT IC=-1mA, VCE=-5V*


    Original     		PDF OT323 ZUMT591 -500mA, 500mW -50mA, 100MHz OT323 -50mA* ic 4446 ZUMT591 SOT323 2222 transistor b 622

    Untitled

    Abstract: No abstract text available
    Text: BCV29, BCV49 NPN Silicon Darlington Transistors 1  For general AF applications 2  High collector current 3  High current gain  Complementary types: BCV28, BCV48 PNP 2 VPS05162 Type Marking Pin Configuration Package BCV29 EF 1=B 2=C 3=E 4=C SOT89 BCV49


    Original     		PDF BCV29, BCV49 BCV28, BCV48 VPS05162 BCV29 BCV49

    Untitled

    Abstract: No abstract text available
    Text: BCP49 NPN Silicon Darlington Transistors • For general AF applications 4 • High collector current • High current gain 3 2 C 2,4 1 B(1) VPS05163 E(3) EHA00009 Type Marking BCP49 BCP 49 Pin Configuration 1=B 2=C 3=E Package 4=C SOT223 Maximum Ratings


    Original     		PDF BCP49 VPS05163 EHA00009 OT223

    BCP49

    Abstract: BCP52-16 FT1513
    Text: BCP49 PNP Silicon Darlington Transistor • For general AF applications • High collector current 4 3 2 • High current gain 1 C 2,4 B(1) E(3) EHA00009 Type BCP49 Marking BCP49 1=B Pin Configuration 2=C 3=E 4=C - Package - SOT223 Maximum Ratings Parameter


    Original     		PDF BCP49 EHA00009 BCP49 OT223 BCP52-16 FT1513

    ZXTN25020BFH

    Abstract: ZXTP25020BFH ZXTP25020BFHTA RBC-10K
    Text: ZXTP25020BFH 20V, SOT23, PNP medium power transistor Summary BVCEX > -40V BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 32 m⍀ VCE(sat) < -60mV @ 1A PD = 1.25W Complementary part number ZXTN25020BFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25020BFH -60mV ZXTN25020BFH ZXTN25020BFH ZXTP25020BFH ZXTP25020BFHTA RBC-10K

    Untitled

    Abstract: No abstract text available
    Text: FMMTA42 SOT23 NPN Silicon planar high voltage transistor Device marking FMMTA42 - 3E Complementary types FMMTA92 Absolute maximum ratings Parameter Collector-base voltage Symbol VCBO FMMTA42 300 Unit V Collector-emitter voltage VCEO 300 V Emitter-base voltage


    Original     		PDF FMMTA42 FMMTA92

    ZXTN25020BFH

    Abstract: ZXTP25020BFH ZXTP25020BFHTA
    Text: ZXTP25020BFH 20V, SOT23, PNP medium power transistor Summary BVCEX > -40V BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 32 m⍀ VCE(sat) < -60mV @ 1A PD = 1.25W Complementary part number ZXTN25020BFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25020BFH -60mV ZXTN25020BFH ZXTN25020BFH ZXTP25020BFH ZXTP25020BFHTA

    Untitled

    Abstract: No abstract text available
    Text: 32E D • Ô 23 b 3 2 0 QQlbb7Q PNP Silicon Darlington Transistors 2 msip BCV 28 BCV 48 S IE M E N S / SPCL-i SEMICONDS For general AF applications High collector current High current gain Complementary types: BCV 29, BCV 49 NPN Type Marking Ordering code


    OCR Scan     		PDF Q62702-C1683 Q62702-C1685 Q62702-C1852 Q62702-C1854 6E3b32Q 0Qlbb73 BCV28 BCV48 T-29-29

    Untitled

    Abstract: No abstract text available
    Text: 32E D • Ô23b320 ISIP Q Q lb b 7 4 BCV 29 BCV 49 NPN Silicon Darlington Transistors S IE M E N S / • • • • SPCL-, SEM IC O N BS For genera! A F applications High collector current High current gain Complementary types: B C V 28, B C V 48 PNP Type


    OCR Scan     		PDF 23b320 Q62702-C1684 Q62702-C1686 Q62702-C1853 Q62702-C1832 53b350 G01bb77 BCV29 BCV49 T-29-29

    service-mitteilungen

    Abstract: electronica rft Servicemitteilungen VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN radio fernsehen elektronik scans-048 "service-mitteilungen" Leipzig RFT Service RFT Transistoren
    Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D FE R N S E H E N Iradio -teievision \ Versorgung mit Bildröhren AUSGABE' 6/73 DATUM: Juni 1973 B 53 G2 Auf der Grundlage der Anordnung über die Rückführung und den Ein­ satz von Bildröhrenkolben GBl. II Nr. 49 vom 23.August 1972 müs­


    OCR Scan     		PDF

    Transistor BSX 95

    Abstract: k 49 transistor LC 500-S BSX49 Q60218-X48 Q60218-X49 bsx 30 BSX48 Scans-0010549
    Text: IMPIM-Transistoren fü r HF-Schalteranwendungen BSX 48 BSX 49 Die Transistoren BSX 48 und BSX 49 sind doppeltdiffundierte epitaktische Silizium-Transistoren in Planar-Technik im Gehäuse 18 A3 DIN 41 876 TO-18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden.


    OCR Scan     		PDF Q60218-X48 Q60218-X49 Transistor BSX 95 k 49 transistor LC 500-S BSX49 Q60218-X48 Q60218-X49 bsx 30 BSX48 Scans-0010549