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    IE 49 TRANSISTOR Search Results

    IE 49 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IE 49 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCW89R

    Abstract: BCW89 DSA003674
    Text: SOT23 PNP PLANAR SMALL SIGNAL TRANSISTORS BCW89 ISSUE 2 – FEBRUARY 1995 PARTMARKING DETAILS – DIM E C B Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059


    Original     		PDF BCW89 BCW89R -10mA, -50mA, 35MHz 200Hz BCW89R BCW89 DSA003674

    BCW70R

    Abstract: BCW69R BCW69 BCW70 720 sot23 DSA003673
    Text: SOT23 PNP PLANAR SMALL SIGNAL TRANSISTORS BCW69 BCW70 BCW69 BCW70 ISSUE 2 – FEBRUARY 1995 PARTMARKING DETAILS – DIM E C B Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085


    Original     		PDF BCW69 BCW70 BCW69R BCW70R -10mA, -50mA, BCW70R BCW69R BCW69 BCW70 720 sot23 DSA003673

    Q62702-C2136

    Abstract: Q62702-C2137
    Text: NPN Silicon Darlington Transistors BCP 29 BCP 49 For general AF applications ● High collector current ● High current gain ● Complementary types: BCP 28/48 PNP ● Type Marking Ordering Code (tape and reel) BCP 29 BCP 49 BCP 29 BCP 49 Q62702-C2136 Q62702-C2137


    Original     		PDF Q62702-C2136 Q62702-C2137 OT-223 Q62702-C2136 Q62702-C2137

    Untitled

    Abstract: No abstract text available
    Text: BCP 29, BCP 49 Darlington Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung ±0.2 6.5 ±0.1 3 1.65 2.3 2 ±0.2 3.5 ±0.3 7 0.7 1.5 W Plastic case


    Original     		PDF OT-223 UL94V-0

    marking BCV

    Abstract: bcv 49
    Text: BCV 29, BCV 49 NPN Silicon Darlington Transistors 1 • For general AF applications 2 • High collector current 3 • High current gain • Complementary types: BCV 28, BCV 48 PNP 2 VPS05162 Type Marking Pin Configuration Package BCV 29 EF 1=B 2=C 3=E 4=C


    Original     		PDF VPS05162 OT-89 EHP00322 EHP00323 EHP00324 EHP00325 Sep-30-1999 marking BCV bcv 49

    EHA00009

    Abstract: BCP29 BCP49 VPS05163
    Text: BCP29, BCP49 NPN Silicon Darlington Transistors  For general AF applications 4  High collector current  High current gain  Complementary types: BCP28/48 PNP 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00009 Type Marking Pin Configuration Package BCP29 BCP 29


    Original     		PDF BCP29, BCP49 BCP28/48 VPS05163 EHA00009 BCP29 OT223 EHA00009 BCP29 BCP49 VPS05163

    BCP29

    Abstract: BCP49 VPS05163
    Text: BCP29, BCP49 NPN Silicon Darlington Transistors  For general AF applications 4  High collector current  High current gain  Complementary types: BCP28/48 PNP 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00009 Type Marking Pin Configuration Package BCP29 BCP 29


    Original     		PDF BCP29, BCP49 BCP28/48 VPS05163 EHA00009 BCP29 OT223 BCP29 BCP49 VPS05163

    Untitled

    Abstract: No abstract text available
    Text: BCP29, BCP49 NPN Silicon Darlington Transistors  For general AF applications 4  High collector current  High current gain  Complementary types: BCP28/48 PNP 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00009 Type Marking Pin Configuration Package BCP29 BCP 29


    Original     		PDF BCP29, BCP49 BCP28/48 VPS05163 EHA00009 BCP29 OT223 OT223

    BCV49

    Abstract: BCV28 BCV29 BCV48
    Text: BCV29, BCV49 NPN Silicon Darlington Transistors 1  For general AF applications 2  High collector current 3  High current gain  Complementary types: BCV28, BCV48 PNP 2 VPS05162 Type Marking Pin Configuration Package BCV29 EF 1=B 2=C 3=E 4=C SOT89 BCV49


    Original     		PDF BCV29, BCV49 BCV28, BCV48 VPS05162 BCV29 EHP00322 BCV49 BCV28 BCV29 BCV48

    BCV48

    Abstract: bcv49 npn darlington BCV28 BCV29 BCV49
    Text: BCV29, BCV49 NPN Silicon Darlington Transistors • For general AF applications 1 2 • High collector current 3 2 • High current gain • Complementary types: BCV28, BCV48 PNP • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type


    Original     		PDF BCV29, BCV49 BCV28, BCV48 BCV29 BCV48 bcv49 npn darlington BCV28 BCV29 BCV49

    ic 4446

    Abstract: ZUMT591 SOT323 2222 transistor b 622
    Text: SOT323 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ZUMT591 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . PARAMETER SYMBOL MIN. Static Forward Current Transfer Ratio hFE 100 100 80 15 Transition Frequency fT Ouput Capacitance Cobo TYP. MAX. UNIT IC=-1mA, VCE=-5V*


    Original     		PDF OT323 ZUMT591 -500mA, 500mW -50mA, 100MHz OT323 -50mA* ic 4446 ZUMT591 SOT323 2222 transistor b 622

    BCV29

    Abstract: No abstract text available
    Text: BCV29, BCV49 NPN Silicon Darlington Transistors 1  For general AF applications 2  High collector current 3  High current gain  Complementary types: BCV28, BCV48 PNP 2 VPS05162 Type Marking Pin Configuration Package BCV29 EF 1=B 2=C 3=E 4=C SOT89 BCV49


    Original     		PDF BCV29, BCV49 BCV28, BCV48 VPS05162 BCV29 BCV49

    Untitled

    Abstract: No abstract text available
    Text: BCV29, BCV49 NPN Silicon Darlington Transistors 1  For general AF applications 2  High collector current 3  High current gain  Complementary types: BCV28, BCV48 PNP 2 VPS05162 Type Marking Pin Configuration Package BCV29 EF 1=B 2=C 3=E 4=C SOT89 BCV49


    Original     		PDF BCV29, BCV49 BCV28, BCV48 VPS05162 BCV29 BCV49

    BCP49

    Abstract: BCP52-16 FT1513
    Text: BCP49 PNP Silicon Darlington Transistor • For general AF applications • High collector current 4 3 2 • High current gain 1 C 2,4 B(1) E(3) EHA00009 Type BCP49 Marking BCP49 1=B Pin Configuration 2=C 3=E 4=C - Package - SOT223 Maximum Ratings Parameter


    Original     		PDF BCP49 EHA00009 BCP49 OT223 BCP52-16 FT1513

    ZXTN25020BFH

    Abstract: ZXTP25020BFH ZXTP25020BFHTA
    Text: ZXTP25020BFH 20V, SOT23, PNP medium power transistor Summary BVCEX > -40V BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 32 m⍀ VCE(sat) < -60mV @ 1A PD = 1.25W Complementary part number ZXTN25020BFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25020BFH -60mV ZXTN25020BFH ZXTN25020BFH ZXTP25020BFH ZXTP25020BFHTA

    Monolithic Transistor Pair

    Abstract: NPN Monolithic Transistor Pair LM3046 LM3046M M14A AN-450
    Text: LM3046 Transistor Array General Description Features The LM3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially-connected pair. The transistors are well suited


    Original     		PDF LM3046 LM3046 14-lead Monolithic Transistor Pair NPN Monolithic Transistor Pair LM3046M M14A AN-450

    FMMTA42

    Abstract: FMMTA92 TS16949 semiconductors 3E
    Text: FMMTA42 SOT23 NPN Silicon planar high voltage transistor Device marking FMMTA42 - 3E Complementary types FMMTA92 Absolute maximum ratings Parameter Collector-base voltage Symbol VCBO FMMTA42 300 Unit V Collector-emitter voltage VCEO 300 V Emitter-base voltage


    Original     		PDF FMMTA42 FMMTA42 FMMTA92 D-81541 FMMTA92 TS16949 semiconductors 3E

    LM3086

    Abstract: LM3086 transistor Datasheet LM3086 transistor LM3046 LM3086N Monolithic Transistor Pair J14A LM3045 LM3045J LM3046M
    Text: LM3045/LM3046/LM3086 Transistor Arrays General Description Features The LM3045, LM3046 and LM3086 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially-connected pair. The transistors


    Original     		PDF LM3045/LM3046/LM3086 LM3045, LM3046 LM3086 LM3045 14-lead LM3046 LM3086 transistor Datasheet LM3086 transistor LM3086N Monolithic Transistor Pair J14A LM3045J LM3046M

    Untitled

    Abstract: No abstract text available
    Text: 32E D • Ô 23 b 3 2 0 QQlbb7Q PNP Silicon Darlington Transistors 2 msip BCV 28 BCV 48 S IE M E N S / SPCL-i SEMICONDS For general AF applications High collector current High current gain Complementary types: BCV 29, BCV 49 NPN Type Marking Ordering code


    OCR Scan     		PDF Q62702-C1683 Q62702-C1685 Q62702-C1852 Q62702-C1854 6E3b32Q 0Qlbb73 BCV28 BCV48 T-29-29

    Untitled

    Abstract: No abstract text available
    Text: 32E D • Ô23b320 ISIP Q Q lb b 7 4 BCV 29 BCV 49 NPN Silicon Darlington Transistors S IE M E N S / • • • • SPCL-, SEM IC O N BS For genera! A F applications High collector current High current gain Complementary types: B C V 28, B C V 48 PNP Type


    OCR Scan     		PDF 23b320 Q62702-C1684 Q62702-C1686 Q62702-C1853 Q62702-C1832 53b350 G01bb77 BCV29 BCV49 T-29-29

    service-mitteilungen

    Abstract: electronica rft Servicemitteilungen VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN radio fernsehen elektronik scans-048 "service-mitteilungen" Leipzig RFT Service RFT Transistoren
    Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D FE R N S E H E N Iradio -teievision \ Versorgung mit Bildröhren AUSGABE' 6/73 DATUM: Juni 1973 B 53 G2 Auf der Grundlage der Anordnung über die Rückführung und den Ein­ satz von Bildröhrenkolben GBl. II Nr. 49 vom 23.August 1972 müs­


    OCR Scan     		PDF

    Transistor BSX 95

    Abstract: k 49 transistor LC 500-S BSX49 Q60218-X48 Q60218-X49 bsx 30 BSX48 Scans-0010549
    Text: IMPIM-Transistoren fü r HF-Schalteranwendungen BSX 48 BSX 49 Die Transistoren BSX 48 und BSX 49 sind doppeltdiffundierte epitaktische Silizium-Transistoren in Planar-Technik im Gehäuse 18 A3 DIN 41 876 TO-18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden.


    OCR Scan     		PDF Q60218-X48 Q60218-X49 Transistor BSX 95 k 49 transistor LC 500-S BSX49 Q60218-X48 Q60218-X49 bsx 30 BSX48 Scans-0010549

    Untitled

    Abstract: No abstract text available
    Text: SM-8 DUAL PIMP MEDIUM POWER ZDT751 TRANSISTORS ISSUE 1 - AUGUST 1997 ABSOLUTE M A XIM U M RATINGS. PARAMETER SYMBOL C o lle cto r-B a se V o lta g e VcBO -80 V C o lle c to r-E m itte r V o lta g e VcEO -60 V E m itte r-B a s e V o lta g e V ebo -5 V P eak P u ls e C u r r e n t


    OCR Scan     		PDF ZDT751

    Untitled

    Abstract: No abstract text available
    Text: ZETEX ZXT12N20DX SuperS0T4 DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY Vceo=20V; Rsat = 40m il; lc= 3.5A DESCRIPTION T his n e w 4th g e n e ra tio n u ltra lo w sa tu ra tio n tra n s is to r u tilise s th e Z ete x m a trix s tru c tu re c o m b in e d w ith ad va nce d a sse m b ly te c h n iq u e s to give


    OCR Scan     		PDF ZXT12N20DX