IEEE J. SOLID STATE CIRCUITS, VOL. SC Search Results

Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN

Abstract: 180NM IBM
Contextual Info: IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 46, NO. 11, NOVEMBER 2011 2613 Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN Anuj Madan, Member, IEEE, Michael J. McPartlin, Member, IEEE, Zhan-Feng Zhou, Chun-Wen Paul Huang, Member, IEEE, Christophe Masse, and John D. Cressler, Fellow, IEEE

A 5 GHz 0.95 dB NF Highly Linear Cascode Floating-Body LNA in 180 nm SOI CMOS Technology

Contextual Info: 200 IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 22, NO. 4, APRIL 2012 A 5 GHz 0.95 dB NF Highly Linear Cascode Floating-Body LNA in 180 nm SOI CMOS Technology Anuj Madan, Member, IEEE, Michael J. McPartlin, Member, IEEE, Christophe Masse, William Vaillancourt, and

transistor RCA 467

Abstract: ota ca 3080 RCA 3080 rca CA3080 RCA 467 rca cmos book rca cmos handbook IEEE J. Solid State Circuits, SC "rca application note" rca 1967
Contextual Info: R. L. Geiger and E. Sánchez-Sinencio, "Active Filter Design Using Operational Transconductance Amplifiers: A Tutorial," IEEE Circuits and Devices Magazine, Vol. 1, pp.20-32, March 1985. Active Filter Design Using Operational Transconductance Amplifiers: A Tutorial

Fairchild uA710

Abstract: binary to gray code converter circuit diagram us circuit for binary to gray code converter binary to gray code converter 3-bit magnitude comparator HS810 Design a 3-bit magnitude comparator by using basic 4 bit gray to binary converter circuit ua710 application note folding-ADC
Contextual Info: MT-025 TUTORIAL ADC Architectures VI: Folding ADCs by Walt Kester INTRODUCTION The "folding" architecture is one of a number of possible serial or bit-per-stage architectures. Various architectures exist for performing A/D conversion using one stage per bit, and the

SC11

Abstract: "Olivetti"
Contextual Info: Copyright  2000 IEEE. Reprinted from: R. Micheloni, Matteo Zammattio, Giovanni Campardo, Osama Khouri, Guido Torelli, "Hierarchical Sector Biasing Organization for Flash Memories", 2000 IEEE International Workshop on Memory Technology, Design and Testing MTDT 2000 ,

MT-022

Abstract: delta modulation tutorial sigma delta Hauser MASH vacuum tube 80 MT-001 analog devices transistor tutorials phillips handbook MASH 1bit
Contextual Info: MT-022 TUTORIAL ADC Architectures III: Sigma-Delta ADC Basics by Walt Kester INTRODUCTION The sigma-delta Σ-Δ ADC is the converter of choice for modern voiceband, audio, and highresolution precision industrial measurement applications. The highly digital architecture is

Widlar

Abstract: lm12 op amp 150W TRANSISTOR AUDIO AMPLIFIER 800W TRANSISTOR npn 800w inverter AN-446B frederiksen Three-Five Widlar AN-21 LM12
Contextual Info: National Semiconductor Application Note 446B April 1998 Robert J. Widlar Apartado Postal 541 steady-state conditions increases guaranteed power ratings by several times when compared to older techniques. At the same time, it dramatically lowers the peak junction temperature with worst-case fault conditions.

600W TRANSISTOR AUDIO AMPLIFIER

Abstract: Widlar h9301 pnp 150w darlington transistor to3 package 800W TRANSISTOR npn 800w inverter AN-446B LM12 446B C1995
Contextual Info: National Semiconductor Application Note 446B 446B October 1987 Robert J Widlar Apartado Postal 541 Puerto Vallarta Jalisco Mexico Mineo Yamatake National Semiconductor Corp Santa Clara California Abstract The standard junction-isolated power process has been modified by the addition of polycrystalline-film resistors to solve the topological problems encountered in

Widlar

Abstract: AN009301-11 AN-446B 800W TRANSISTOR npn 446B LM12 150w darlington transistor to3 package 600W TRANSISTOR AUDIO AMPLIFIER
Contextual Info: Robert J. Widlar Apartado Postal 541 steady-state conditions increases guaranteed power ratings by several times when compared to older techniques. At the same time, it dramatically lowers the peak junction temperature with worst-case fault conditions. Still

hot electron devices

Abstract: SGS-Thomson ball grid array VLSI Vision
Contextual Info: CHAPTER 6 TOWARDS THE FUTURE “Tomorrow will differ from yesterday. It will be new and depend on us. It is to be invented more than discovered” 6.1 VISION Vision 2000 By the year 2000, be among the top world suppliers and be recognized as the “best-inclass” in service and environmental protection,

hartley oscillator

Abstract: The Modern Armstrong Regenerative Receiver 1GHz vco AR5111 max2115 history of varactor diode modern and radar transmitters 226 varactor hartley sa2400
Contextual Info: SIGNAL GENERATION CIRCUITS WIRELESS, RF, AND CABLE Application Note 1768: Oct 21, 2002 Tracking Advances In VCO Technology Tracks the history of voltage-controlled oscillators VCOs since approximately 1910. Provides examples of VCO integration in RF ICs. Presents technology, performance

AD77xx-series

Abstract: Digital IF 455 KHz bandpass sigma-delta adc MASH, 1 bit dac AD77XX adc 24 bit sampling rate 10kHz AD7799 mash MASH 1bit radio frequency receiver low if sigma-delta adc AD9864
Contextual Info: MT-023 TUTORIAL ADC Architectures IV: Sigma-Delta ADC Advanced Concepts and Applications by Walt Kester INTRODUCTION Tutorial MT-022 discussed the basics of Σ-Δ ADCs. In this tutorial, we will look at some of the more advanced concepts including idle tones, multi-bit Σ-Δ, MASH, bandpass Σ-Δ, as well as

Jaro

Abstract: hot electron devices QUANTUM CAPACITIVE C-15 C-16 TC271 H2 Analyzer 4600
Contextual Info: TC271 Characterization Report Jeffrey S. Campbell Image Sensor Technology Center Texas Instruments Incorporated Dallas, Texas SEPTEMBER 1994 SOCA004 C-1 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any

toshiba FeRAM

Abstract: FeRAM "Ferroelectric RAM" Ferroelectric RAM CHIP capacitor cross reference 272C
Contextual Info: 2.7 A 76mm2 8Mb Chain Ferroelectric Memory Daisaburo Takashima, Yoshiaki Takeuchi, Tadashi Miyakawa, Yasuo Itoh, Ryu Ogiwara, Masahiro Kamoshida, Katsuhiko Hoya, Sumiko Mano Doumae, Tohru Ozaki, Hiroyuki Kanaya, Masami Aoki, Koji Yamakawa, Iwao Kunishima, Yukihito Oowaki

GaN ADS

Abstract: LDMOS 3RD Rail Engineering
Contextual Info: Highly Efficient Operation Modes in GaN Power Transistors Delivering Upwards of 81% Efficiency and 12W Output Power Peter Wright, Aamir Sheikh, Chris Roff, P. J. Tasker and J. Benedikt. Cardiff School of Engineering, Cardiff University, Cardiff, UK. email: wrightp@cardiff.ac.uk

X-band Gan Hemt

Abstract: x-Band Hemt Amplifier class e power amplifier AM MODULATOR mechanism X-band AM modulation theory polar modulator TEC2005-07985-C03-01 Cree Microwave
Contextual Info: ISMOT 2007 - Dec. 17-21, Monte Porzio Catone Roma - Italy Characterizing the Vdd-to-AM and Vdd-to-PM Nonlinearities in a GaN HEMT Class E Power Amplifier J. A. García*, B. Bedia*, R. Merlín*, P. Cabral*, J. C. Pedro* * Department of Communications Engineering

Contextual Info: A PROM Element Based on Salicide Agglomeration of Poly Fuses in a CMOS Logic Process Mohsen Alavi , Mark Bohr, Jeff Hicks, Martin Denham, Allen Cassens, Dave Douglas, Min-Chun Tsai Intel Corporation, Portland Technology Development Hillsboro, OR width with a few microns of length see Fig. 2 . The effect

Westinghouse SCR handbook

Abstract: General electric SCR SCR Applications Handbook General electric SCR manual "General Electric SCR Manual" 6th SCR Handbook, rca INTERNATIONAL RECTIFIER scr WESTINGHOUSE scr rca thyristor manual voltrap
Contextual Info: Introduction to Solid State Power Electronics Editor: John William Motto, Jr. Semiconductor Division Youngwood, Pennsylvania 15697 Acknowledgement February 1977 The material for this updated text was originally written by Dr. William E. Newell, a noted authority

TUNNEL DIODE

Abstract: oscillator tunnel diode "tunnel diode" oscillator "tunnel diode" tunnel diode application TUNNEL DIODE spice model DATASHEET TUNNEL DIODE Design Guidelines for Quartz Crystal Oscillators negative resistance amplifier oscillator tunnel diode datasheet
Contextual Info: Crystal Oscillator Design And Negative Resistance by Anthony M Scalpi, Cypress Semiconductor Timing is a critical part of almost every electronics application. Communication and data transfer generally require a reference signal or source to enable system synchronization

AD1860

Abstract: fDM 311 AN-282 an282 HP 2732 5180A IEEE J. Solid State Circuits, Vol. SC 5180A-2
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Contextual Info: MT-022 指南 ADC架构III：Σ-Δ型ADC基础 作者：Walt Kester 简介 Σ-Δ型ADC是现代语音频带音频和高分辨率精密工业测量应用所青睐的转换器。高度数 字架构非常适合现代细线CMOS工艺，因而允许轻松添加数字功能，而又不会显著增加成

Base Resistance Scaling for Transistors of Various Geometries

Contextual Info: Base Resistance Scaling for Transistors of Various Geometries Yingying Yang and P.J. Zampardi* Skyworks Solutions, Inc., 2427 Hillcrest Drive, Newbury Park, CA 91320 yingying.yang@skyworksinc.com, 805 480-4289 *formerly of Skyworks Abstract — Base resistance is an important parameter for

varactor diode model in ADS

Abstract: zo 607 transistor zo 607 ADS varactor diode yig oscillator hp working of colpitts oscillator common emitter bjt how to test Triode Thyristors applications of blocking oscillator triode
Contextual Info: Advanced Design System 2001 Oscillator DesignGuide August 2001 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

Contextual Info: A Fully Integrated Ku-band PLL in SiGe:C for VSAT Applications Marcel J.M. Geurts, Louis Praamsma, Hasan Gül, Fanfan Meng, Henk Bontekoe, Rainier Breunisse, Henk Visser, Cicero S. Vaucher, Edwin van der Heijden NXP Semiconductors, Nijmegen, 6534 AE, the Netherlands, Marcel.Geurts@nxp.com