IFW 04 Search Results

Contextual Info: Alle Rechte vorbehalten/ Ml rights rtsernd 4 5 3 2 1 PCB layout, component side 15,46 * 0,38 PRE-ASSEMBLED ASSEMBLED — 1st contact T | ifw w w w w w a [T itinnrirtnnrri B 4 IrNrit 2,54 0,3 - e 2,54 x 3 = 7,62 Dot. Detail. 08/04/08 Insp. Stood.

Contextual Info: i U M 6 1 16-25/-35/-4S ifW li 2Kx 8 High Speed CMOS SRAM Features • S ingle + 5 v o lt p o w e r su p p ly D ire c tly T T L c o m p a tib le : A ll in p u ts and o u tp u ts ■ Access tim es: 2 5 /3 5 /4 5 ns m ax. C o m m o n I/O using th re e -sta te o u tp u t

D0201AD

Abstract: MS502 MS503
Contextual Info: It i 5 Amp Schottky Rectifier S502, MS503 : £ Dim. Inch es M inimum .188 1.00 .285 .046 A B C D M illim e te r Maximum M inim um .260 -.375 .056 4.78 25.4 7.24 1.17 Maximum Notes 6.50 Ota. 9.52 1.42 Dia. - a PLASTIC D0201AD -IU -. M icrosem i C atalog N um ber

irf6348

Abstract: IRF7206 HEXFET Power MOSFET hexfet navigator IBF7306 IRFBC406
Contextual Info: Internationa! IO R Rectifier The HEXFET Power MOSFET Navigator Through-Hole Devices KEY: Part number FOD Document # Date for Date for Samples Production TO-220 TO-220 FullPak illustrations not to scale TO-247 (TO-3P) 'ï« N A T I C + iA L ÎE C Ï .N E *

Contextual Info: s e MIKRO n V rsm Rectifier Diodes Ifav sin. 180; Tease — 7 5 °C V rrm V 1550 A 400 SKN 1500/04 SKN 1500 SKN 2000 2 00 0 A SKN 2000/06 600 1200 SKN 1500/12 SKN 2000/12 1600 SKN 1500/16 SKN 2000/16 2 000 SKN 2000/20 2400 SKN 1500/20 SKN 1500/24 2 900

tcl 110011 ic

Abstract: lm 398- SAMPLE AND HOLD
Contextual Info: inte1 M W l M fT O B R M B T O N ] M80C186XL20,16,12,10 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSOR Low Power, Full Static Version of M80C186 Operation Modes: — Enhanced Mode — DRAM Refresh Control Unit — Power-Save Mode — Direct Interface to 80C187

43025-1000

Abstract: molex 43025-0400 43025-0400 43025-2400 molex 43025 1600 43025-2000 15LAST 2TI1 MOLEX 43025 molex 43025-1200
Contextual Info: 20 19 PART CHARACTERISTICS NUMBER OF POSITION ASSEMBLY ITEM NUMBER S E E N O TE 8 - - L A S T C IRCUIT TY P . D.71 CKT SIZES 2 & 4 02 4 3 0 2 5 -0 2 0 0 04 4 3 0 2 5 -0 4 0 0 .5 0 6 /(1 2 .8 5 ) 06 4 3 0 2 5 -0 6 0 0 .6 2 4 /(1 5 .8 5 ) 08 4 3 0 2 5 -0 8 0 0

quadrant detector

Contextual Info: Quadrant - Photodiode JQI 5P,JQI 20P and JQI 50P with integrated amplifier Characteristics : Application : ♦ ♦ ♦ ♦ Si - PIN - Photodiode spectral range active area resolution ♦ ♦ movement detector star finder detector in astronomic equipment 360 . 1060

DSA-0421S-12

Abstract: DSA-0421S-121 dsa-0421s dsa-0421s-12 2 36 YS-3 SAA 1020 YS3-02319 0421s
Contextual Info: DVE D E E YS3-02319_ DSA-0421S-12 1 VAN ENTERPRISE CO., LTD. 42_ Revision: A Date: 2007.02.07 CUSTOMER: STONTRONICS PART NUMBER: T3837ST_ APPROVAL SHEET OF SWITCHING ADAPTER MODEL NO. DSA-0421S-121 ORDER NO: YS3-02319 42 _ CUSTOMER APPROVED SIGNATURE

Contextual Info: ifanoifa 0183 DIM 'A* DIM *8'- 11.««I t 8 .05 S Q . » .4 5 -li In i It >i!li iflii jit iflli iflii iflii ^lii lilii illt lilli lilii irfl iflli ii!l iffc li lr Big DUBBISI IS IS BIB B U M BINISI BEI I.» 3.2® inmm li m 0 mm n nisi mm n m 1111 m b 1 ^ R |H |H |H j^ ^

package drawings

Abstract: 16pin 617
Contextual Info: General Information Package Drawings UNITRODE CORPORATION • 5 FORBES ROAD LEXINGTON. MA 02173 • TEL. 617 861-6540 TWX (710) 326-6509 • TELEX 95-1064 12-27 P R IN T E D IN U .S A General Information Package Drawings 3-Pin TO-220 T Package TO-3 Metal K Package

JEC1SS

Contextual Info: SiC - photodiode JEC 1S/JEC 1SS characteristics : ♦ ♦ ♦ ♦ spectral range active area high UV-responsivity TO 18-package applications : ♦ ♦ ♦ UV-measurement only UV-source control flame detection 210 . 380 0,965 0,13 nm mm2 A/W maximum ratings:

Contextual Info: 'J. C/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-P-N TYPE 2NT19 GROWN JUNCTION SILICON TRANSISTOR 36 to 86 beta spread Specifically designed for bigk gain at Ugh temperatures mechanical data

Contextual Info: SiC - photodiode JEC 0,3S/JEC 0,3SS characteristics : ♦ ♦ ♦ ♦ spectral range active area high UV-responsivity TO 18-package applications : ♦ ♦ ♦ UV-measurement only UV-source control flame detection 210 . 380 0,22 0,13 nm mm2 A/W maximum ratings:

jec amplifier

Abstract: Solar sun sensor cossh
Contextual Info: SiC – Photodiode JEC 1 I-DE ERYCS characteristics : ♦ ♦ ♦ ♦ ♦ applications : SiC-photodiode with integrated special filter ideal for solar application full hermetic TO-5 package integrated diffusor for cos-shaped response characteristic sensor assembly isolated to ground

n12a

Abstract: 225 GEZ AZPF-22-022RH030KB AZPF-22-019RH030KB pumpe rexroth
Contextual Info: 11 c <L> A 510 840 315 Ö <U c_ <D j_> *-> tn c c 3 < a > C "O <L> CO , — CT} Q_ C O 3 ^ c_ a> •O "O c c r ic <L> E a> o "O 3 c_ *-> "O r ai o ^ ■ — ■ c c Q <u a> ■o c_ oj a> I) T 3 3 a : —> a) -o ±0.6 39.5 (1) OJ Û . .q c_ o N^ .C -C O O

4030-I6G

Contextual Info: 13 12 11 10 -CENTERLINE OF PIN IN AREA SHOWN DIM. A NOT TO VARY FROM CENTERLINE OF PIN AT DATUM CKTS. NO. OF -D- BY • D IM .B MORE THAN .0 0 8 IN ANY DIRECTION DIM. B o - SEE D E TAIL 3 (2.54±.05 .I00± .002 TYP. BETWEEN ANY TWO ( CONSECUTIVE CKTS AT DATUM

Contextual Info: DO -22, 0 MAX. NOT SCALE DIMENSIONS THIRD ANGLE METRIC IN mm PROJECTION NOTES: SECT I ON A -A A PLATING CONNECTOR: CONTACT AREA: 0,8/im Au MIN. OVER 7,3/im Ni MIN. ACT I O N - P IN AREA ACTION PIN 0,5/im SnPb MIN. OVER 7,3/am Ni MIN. PLATING CONNECTOR: A CONTACT" AREA: 2, Ofim Au MIN. OVER 7,3/im Ni MIN.

H113

Abstract: 31i-B thyristor sec 720 1155I
Contextual Info: June 1990 1 M 4* nj> ¿í |§M -r Pf » » <w 1 4^ O Ì + CO ai V m ttií 1 PEf w tn 4fr Ht Pi Sf P-H H 00 S •T ¡0 s w S </> S '—i & a. ii c£ rt* ¡Si (Si r(T rt ffi iS >V a S ÌSn C~ (T Trr * Pt ¿Ut >v O > < & ah. 1 v> ■^+ xl *s o' S ti V V hr ¡jü

Contextual Info: 12P 7>£ 'y5LP'y?£ <7° vsm w m MULTI-POLE CO NNEC TO R S(12P)Q uickLockingType U N IT mm Assembly Type Straight Plug t t t i / Specifications £ ^ / R a t in g : 12V DC 1A MAX ffiifcit&trL./Insulation Resistance: 50M D MIN. at 250V DC SfettiM t)/D ie le c tric Strength:

Contextual Info: S p e c tra -Z ip p la n a r c a b le — 191-2801 series benefits * Fast, low-cosi mass l^m inaton. * Precise spadna for ternra ed electri­ cal cfiarsdansiticH * Fieaib^e gray PVC Insulsiiqn * Oouble COniSdr alkJws terminaricn rn?meilfier side of taiie.

H21L

Abstract: H21L1 H21L2
Contextual Info: SLOTTED OPTICAL SWITCH W M u n s im ts H21L1/2 PACKAGE DIMENSIONS D1- ^1 *bl| 1 M>D & E in + » j s •<pp 1 - SEC TIO N X - X LEAD PRO FILE a□ □ ST1344 SYMBOL MILLIMETERS MIN, MAX. 10.7 A 11.0 3.0 3.2 At 3.2 3,0 A* .600 .750 b, .50 NOM. D 24.3 24.7

SKR 175

Abstract: semikron skn 18Mfi Semikron SKR 21 n55a 000A2S SKN 170 SKR200 skn 220 a/SKR 170/04
Contextual Info: s e M IK R O n Rectifier Diodes Ifhms maximum values for continuous operation 200 A 260 A 500 A V rsm V rrm Ifav (sin. 180; Tease = 100 °C) 165 A 125 A SKN 100 SKN 130 SKN 240 320 A $ $ $ $ SKN 100/02 SKR SKN SKR 100/02 SKN 130/02 SKR 200 130/02* 240/02

LM 3177

Abstract: bc5488 BC54BB TF1102 TDA 8390 A PM5518 2066 TVPO BC54b ic tda TDA tda 7805
Contextual Info: 11 UV 04 R C 11 SC 01 SEC A M & C T I Diagram Transm itter Diagram 1 Lime YELLOW L9* CTUM l>* - - MUt£ r- mjmrvf. 5T »Y KO I IFWVtE KWCOL BW 1 TUM . ,• 5LEEP t 13 _8 uT m itx ia 3 2 T CKPiwa HOLD 13 . L lf* «tJ T TU MGT* WCm 1. TlhC MCROflY II ! PtCiZ-