IGBT 1000V .200A APPLICATION NOTE Search Results

CM200DY-34A

Abstract: CM-200 IGBT 1000V .200A application note
Contextual Info: MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE CM200DY-34A ¡IC . 200A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack

cm200dy-34a

Abstract: IGBT 1000V .200A
Contextual Info: MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE CM200DY-34A ¡IC . 200A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack

CM200DU-34KA

Contextual Info: MITSUBISHI IGBT MODULES CM200DU-34KA HIGH POWER SWITCHING USE CM200DU-34KA ● IC . 200A ● VCES . 1700V ● Insulated Type ● 2-elements in a pack

Contextual Info: MITSUBISHI IGBT MODULES CM200DU-34KA HIGH POWER SWITCHING USE No t fo R r N ec ew om De me sig nd n CM200DU-34KA ● IC . 200A ● VCES . 1700V

CM200DU-34KA

Contextual Info: MITSUBISHI IGBT MODULES CM200DU-34KA HIGH POWER SWITCHING USE CM200DU-34KA ● IC . 200A ● VCES . 1700V ● Insulated Type ● 2-elements in a pack

Contextual Info: MITSUBISHI IGBT MODULES CM200DU-34KA HIGH POWER SWITCHING USE No t fo R r N ec ew om De me sig nd n CM200DU-34KA ● IC . 200A ● VCES . 1700V

FGH40T100SMD

Abstract: fgh40t100 W10K AC welder IGBT circuit IGBT 1000V .200A igbt 1000v 80a DBVCE
Contextual Info: FGH40T100SMD 1000V, 40A Field Stop Trench IGBT Features General Description • High current capability Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for hard switching application such as UPS, welder,

Contextual Info: FGH40T100SMD 1000V, 40A Field Stop Trench IGBT Features General Description • High current capability Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for hard switching application such as UPS, welder,

RURP8100CC

Contextual Info: RURP8100CC Data Sheet January 2000 File Number 4021.1 8A, 1000V Ultrafast Dual Diode Features The RURP8100CC is an ultrafast dual diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted

RHR8100C

Abstract: RHRP8100CC
Contextual Info: RHRP8100CC Data Sheet Title HR 100 bt A, 00V pert al ode) utho rpoon, minctor, ache erg ted, itch wer pes, wer File Number 3965.2 8A, 1000V Hyperfast Dual Diode Features The RHRP8100CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns). It has half the recovery

RHR8100C

Abstract: RHRP8100CC
Contextual Info: RHRP8100CC Data Sheet January 2002 8A, 1000V Hyperfast Dual Diode Features The RHRP8100CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.

RURP8100CC

Abstract: IGBT 1000V .200A
Contextual Info: RURP8100CC Data Sheet January 2002 8A, 1000V Ultrafast Dual Diode Features The RURP8100CC is an ultrafast dual diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

MUR8100

Abstract: MUR8100E RUR8100 RURP8100
Contextual Info: MUR8100E, RURP8100 Data Sheet January 2002 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.

MU8100

Contextual Info: MUR8100E, RURP8100 Data Sheet December 2002 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.

MUR8100

Abstract: MUR8100E RUR8100 RURP8100
Contextual Info: MUR8100E, RURP8100 Data Sheet January 2000 File Number 2780.4 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride

Contextual Info: Date:- 6 August, 2012 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800

T0340VB

Abstract: T0340VB45G westcode igbt
Contextual Info: Date:- 6 August, 2012 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800

APT0502

Abstract: IGBT 1000V .200A APTGT200U170D4G
Contextual Info: APTGT200U170D4G Single switch Trench + Field Stop IGBT Power Module 1 3 5 2 VCES = 1700V IC = 200A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT Technology

APT0502

Contextual Info: APTGT200SK170D3G Buck Chopper Trench + Field Stop IGBT Power Module Q1 3 VCES = 1700V IC = 200A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies 4 5 1 2 Features • Trench + Field Stop IGBT Technology - Low voltage drop

IGBT 1000V .200A

Abstract: APT0502
Contextual Info: APTGT200DA170D3G Boost chopper Trench + Field Stop IGBT Power Module 3 Q2 1 6 7 2 VCES = 1700V IC = 200A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT Technology

APTGT200A170D3G

Contextual Info: APTGT200A170D3G Phase leg Trench + Field Stop IGBT Power Module Q1 3 4 5 Q2 1 6 7 2 VCES = 1700V IC = 200A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT Technology

Contextual Info: APTGT200SK170D3G Buck Chopper Trench + Field Stop IGBT Power Module Q1 3 VCES = 1700V IC = 200A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies 4 5 1 2 Features • Trench + Field Stop IGBT Technology - Low voltage drop

Contextual Info: APTGT200A170D3G Phase leg Trench + Field Stop IGBT Power Module Q1 3 4 5 Q2 1 6 7 2 VCES = 1700V IC = 200A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT Technology

DIM200PLM33-F000

Abstract: DIM200PLM33-F IGBT 1000V .200A application note
Contextual Info: DIM200PLM33-F000 IGBT Chopper Module Replaces DS5864-2 DS5864-3 October 2011 LN28812 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) (max)