IGBT 1000V 100A Search Results

Contextual Info: FGA50N100BNTD2 1000 V NPT Trench IGBT Features General Description • • • • • Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and

AN7254

Abstract: AN7260 HGTG20N100D2 G20N100D2
Contextual Info: HGTG20N100D2 20A, 1000V N-Channel IGBT May 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time 520ns GATE • High Input Impedance • Low Conduction Loss COLLECTOR BOTTOM SIDE METAL Description

FGA50N100BNTD2

Abstract: IGBT welder circuit
Contextual Info: FGA50N100BNTD2 1000 V NPT Trench IGBT Features General Description • • • • • Using Fairchild 's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and

Contextual Info: FGH40T100SMD 1000V, 40A Field Stop Trench IGBT Features General Description • High current capability Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for hard switching application such as UPS, welder,

FGH40T100SMD

Abstract: fgh40t100 W10K AC welder IGBT circuit IGBT 1000V .200A igbt 1000v 80a DBVCE
Contextual Info: FGH40T100SMD 1000V, 40A Field Stop Trench IGBT Features General Description • High current capability Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for hard switching application such as UPS, welder,

G20N100D2

Abstract: AN7254 AN7260 HGTG20N100D2
Contextual Info: HGTG20N100D2 S E M I C O N D U C T O R 20A, 1000V N-Channel IGBT May 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time 520ns GATE • High Input Impedance • Low Conduction Loss COLLECTOR

G20N100D2

Abstract: GE 639 transistor 901 u 620 tg g20n100 443 20N TSC-1000
Contextual Info: S m HGTG20N100D2 a r r ì 20A, 1000V N-Channel IGBT M ay 1995 Features Package • 34 A, 1000V JEDEC STYLE TO-247 EMfTTER • Latch Free Operation • Typical Fall Time 520ns • High Input Impedance • Low Conduction Loss Description The HG TG 20N 100D 2 is a MOS gated high voltage switching

igbt 1000v 10A

Contextual Info: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche

igbt induction cooker

Abstract: induction heating cooker FGA50N100BNTD2 induction cooker circuit with IGBT induction cooker application notes induction cooker fairchild induction cooker fairchild induction heater induction cooker component induction heater
Contextual Info: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche

wf vqe 24 d

Abstract: AN7254 AN7260 HGTG20N100D2 transistor c90 wx2 transistor
Contextual Info: HARRIS SEIUCOND SECTOR bflE D 33 HARRIS HGTG20N100D2 S E M I C O N D U C T O R 4302271 Ü0SD21D bOT HAS 20A, 1000V N-Channel IGBT December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 34 Amp, 1000 Volt • Latch Free Operation ^EMITTER • Typical Fall Time 520ns

Contextual Info: m H A R R IS S E M I C O N D U C T O R HGTG20N100D2 20A, 1000V N-Channel IGBT December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 34 Am p, 1000 Volt • Latch Free Operation • Typical Fall Tim e 520ns • High Input Im pedance • Low C onduction Loss

CM100DY-34A

Abstract: igbt 1000v 100a
Contextual Info: MITSUBISHI IGBT MODULES CM100DY-34A HIGH POWER SWITCHING USE CM100DY-34A ¡IC . 100A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack

CM100DY-34A

Abstract: MITSUBISHI IGBT 100A IGBT 1000V .100A igbt 1000v 100a 100A 1000V IGBT diode 100a 1000v
Contextual Info: MITSUBISHI IGBT MODULES CM100DY-34A HIGH POWER SWITCHING USE CM100DY-34A ¡IC . 100A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack

CM100DU-34KA

Abstract: IGBT 1000V .200A
Contextual Info: MITSUBISHI IGBT MODULES CM100DU-34KA HIGH POWER SWITCHING USE CM100DU-34KA ● IC . 100A ● VCES . 1700V ● Insulated Type ● 2-elements in a pack

CM100DU-34KA

Abstract: IGBT 1000V .200A
Contextual Info: MITSUBISHI IGBT MODULES CM100DU-34KA HIGH POWER SWITCHING USE CM100DU-34KA ● IC . 100A ● VCES . 1700V ● Insulated Type ● 2-elements in a pack

Contextual Info: MITSUBISHI IGBT MODULES CM100DU-34KA HIGH POWER SWITCHING USE No t fo R r N ec ew om De me sig nd n CM100DU-34KA ● IC . 100A ● VCES . 1700V

CM100DY-34A

Abstract: igbt 1000v 100a IGBT 1000V .100A C2E1 100A 1000V IGBT
Contextual Info: 三菱半導体〈IGBTモジュール〉 CM100DY-34A 大電力スイッチング用 CM100DY-34A ¡IC . 100A ¡VCES . 1700V ¡絶縁形

IGBT 1000V 100A

Abstract: IGBT 1000V .100A 100A 1000V IGBT CM100DU-34KA IGBT 1000V .200A IGBT 40A
Contextual Info: 三菱半導体〈IGBTモジュール〉 CM100DU-34KA 大電力スイッチング用 CM100DU-34KA ¡IC . 100A ¡VCES . 1700V ¡絶縁形

CM50TU-34KA

Contextual Info: MITSUBISHI IGBT MODULES CM50TU-34KA HIGH POWER SWITCHING USE CM50TU-34KA ● IC . 50A ● VCES . 1700V ● Insulated Type ● 6-elements in a pack

CM50TU-34KA

Contextual Info: MITSUBISHI IGBT MODULES CM50TU-34KA HIGH POWER SWITCHING USE CM50TU-34KA ● IC . 50A ● VCES . 1700V ● Insulated Type ● 6-elements in a pack

Contextual Info: MITSUBISHI IGBT MODULES CM50TU-34KA HIGH POWER SWITCHING USE No t fo R r N ec ew om De me sig nd n CM50TU-34KA ● IC . 50A ● VCES . 1700V

IGBT G 1010

Contextual Info: MITSUBISHI IGBT MODULES CM50TU-34KA HIGH POWER SWITCHING USE No t fo R r N ec ew om De me sig nd n CM50TU-34KA ● IC . 50A ● VCES . 1700V

c548 st

Contextual Info: International B Rectifier p— »d-»« « IRGTIN100M12 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT VCE= 1200V lc = 100A «Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losse s .Short circuit rated Vce ON < 2.7V

C528 DIODE

Contextual Info: International [iraiRectifier Provisional Data Sheet PD-9.1165 IRGNIN100M12 “CHOPPER HIGH SIDE SWITCH" IGBTINT-A-PAK Low conduction loss IGBT High Side Switch Vç£ = 1200V lc = 100A 5 °— • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail"