IGBT 1000V 100A 10 KHZ Search Results

GA100TS120UPBF

Contextual Info: Preliminary Data Sheet I27243 12/06 GA100TS120UPbF "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

Contextual Info: Preliminary Data Sheet No. PD-9.939 International 1 ]Rectifier IRGKI0100M12 Fast IGBT "CHOPPER" INT-A-PAK™ MODULES VCE= 1200V *C DC “ 100A • Rugged Design • Simple gate-drive . Fast operation up to 10 kHz hard switching, or 50 kHz resonant .Switching-Loss Rating includes all "tail"

Contextual Info: Bulletin I27236 07/06 GA200SA60UP Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: Preliminary Data S heet No. P D -9.938 International S Rectifier IRGNI0100M12 "CHOPPER" INT-A-PAK MODULES Fast™ IGBT V CE= 1 2 0 0 V W • Rugged Design .Simple gate-drive • Fast operation up to 10 kHz hard switching, or 50 kHz resonant • Switching-Loss Rating includes all "tail"

IGBT 1000V .200A

Abstract: irf 100v 200A Diode 15b RG2 DIODE Diode IR 1254 GA200TS60UX
Contextual Info: Bulletin I27221 03/06 GA200TS60UX "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

GA100TS120U

Contextual Info: PD - 5.060A PRELIMINARY GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

GA100TS120U

Contextual Info: PD - 50060B GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

igbt 1000v 10A

Contextual Info: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche

igbt induction cooker

Abstract: induction heating cooker FGA50N100BNTD2 induction cooker circuit with IGBT induction cooker application notes induction cooker fairchild induction cooker fairchild induction heater induction cooker component induction heater
Contextual Info: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche

GA200TS60UX

Abstract: IGBT 100V 200A
Contextual Info: Bulletin I27221 03/06 GA200TS60UX "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: Bulletin I27221 03/06 GA200TS60UX "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

ga200sa60up

Contextual Info: Bulletin I27236 07/06 GA200SA60UP Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

g50n60hs

Abstract: G50N60 G50N60*HS SGW50N60HS g50n60h SGW50N60HS equivalent G50N60hs IGBT 207E-04 SGW50N60 PG-TO247-3
Contextual Info: o SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability

G50N60HS

Abstract: G50N60 G50N60*HS SGW50N60HS IDP45E60 PG-TO-247-3 207E-04 SGW50N60HS equivalent
Contextual Info: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability

G50N60*HS

Abstract: g50n60hs 200nC Eoff25 G50N60 SGW50N60HS
Contextual Info: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability

G50N60

Abstract: g50n60hs G50N60*HS SGW50N60HS g50n60h IDP45E60 PG-TO-247-3 SGW50N60HS equivalent SGW50N60
Contextual Info: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability

igbt 1000v 100a 10 khz

Contextual Info: APTGT100TL170G Three level inverter Trench + Field Stop IGBT Power Module VCES = 1700V IC = 100A @ Tc = 80°C VBUS Application • Solar converter • Uninterruptible Power Supplies CR1 G1 Q1 Features • Trench + Field Stop IGBT Technology - Low voltage drop

Contextual Info: APTGT100TL170G Three level inverter Trench + Field Stop IGBT Power Module VCES = 1700V IC = 100A @ Tc = 80°C VBUS Application • Solar converter • Uninterruptible Power Supplies CR1 G1 Q1 Features • Trench + Field Stop IGBT Technology - Low voltage drop

m5x0.8

Abstract: ge 142 GA200NS61U
Contextual Info: PD -94347 GA200NS61U High Side Switch Chopper Module Ultra-FastTM Speed IGBT IGBT INT-A-PAK Features 3 • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

irf 1740

Abstract: GA200TD120U
Contextual Info: PD - 5.061B PRELIMINARY GA200TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

g30n60hs

Abstract: G30N60hs IGBT G30N60 SGP30N60HS 600v 30a IGBT SGW30N60HS igbt 600V 30A infineon SGW30N60HS PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21
Contextual Info: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability

ir 249A

Abstract: GA200TD120U W80S
Contextual Info: PD - 50061C GA200TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

GA200SA60SP

Contextual Info: Bulletin I27235 07/06 GA200SA60SP Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC

g30n60hs

Abstract: g30n60 SGW30N60HS 1A20A
Contextual Info: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability